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    TRANSISTOR 2 AMPER 3 VOLT Search Results

    TRANSISTOR 2 AMPER 3 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2 AMPER 3 VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    800w power inverter circuit diagram

    Abstract: Lambda-GP485 neptune digital Energy Meter M8 NC405 Nemic-Lambda power supply unit zup20-40 user manual NEMIC LAMBDA supply Circuit diagram coutant power supply coutant power supply 5V NEMIC-LAMBDA ZUP10-80 LAMBDA zup
    Text: DENSEI-LAMBDA ZERO-UP 200W/400W/800W Programmable DC Power Supplies Constant Voltage/Constant Current Built-in RS232 & RS485 Interface with GPIB option. C US LISTED . TESTING EQUIPMENT TUV Rheinland 65SA . geprufte Sicherheit USER'S MANUAL KARMIEL INDUSTRIAL ZONE, POB 500, ZC-20101, ISRAEL.


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    PDF 00W/400W/800W RS232 RS485 ZC-20101, ZUP6-33 ZUP10-20 ZUP20-10 ZUP36-6 ZUP60-3 ZUP6-66 800w power inverter circuit diagram Lambda-GP485 neptune digital Energy Meter M8 NC405 Nemic-Lambda power supply unit zup20-40 user manual NEMIC LAMBDA supply Circuit diagram coutant power supply coutant power supply 5V NEMIC-LAMBDA ZUP10-80 LAMBDA zup

    T8A250V

    Abstract: 800w power inverter circuit diagram NEMIC LAMBDA supply Circuit diagram transistor Arm 3055 equivalent coutant coutant power supply 5V nc302 zener diode for 240v ac voltage remote control LAMBDA zup
    Text: GLOBAL NETWORK Europe / North America Asia / Far East / Middle East NORTH AMERICA Lambda Americas, Inc. 3055 Del Sol Boulevard San Diego, CA 92154 Tel: +1-800-LAMBDA-4 Tel: +1-619-575-4400 Fax: +1-619-429-1011 www.lambdapower.com Densei Lambda KK, 5F Dempa Bldg, 1-11-15 Higashigotanda,


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    PDF 1-800-LAMBDA-4 RS232 RS485 RS232) T8A250V 800w power inverter circuit diagram NEMIC LAMBDA supply Circuit diagram transistor Arm 3055 equivalent coutant coutant power supply 5V nc302 zener diode for 240v ac voltage remote control LAMBDA zup

    transistor D2058

    Abstract: K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010
    Text: PLEASE READ PRIOR TO INSTALLATION FOR SAFETY.  AC input power must be disconnected before any wiring to the AC motor drive is made. DANGER  Even if the power has been turned off, a charge may still remain in the DC-link capacitors with hazardous voltages before the POWER LED is OFF. Please do


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    PDF C2000 transistor D2058 K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010

    gefran 200 -2r

    Abstract: gefran 500 controller manual gefran 500 manuale manual gefran 1000 gefran 1101 gefran 800 manual gefran 500 programmazione gefran 500 programming gefran 500 manual gefran 2400
    Text: 1000 / 1001 / 1101 ISO 9001 SOFTWARE 11.x / 12.x cod. 80343 / Edit. 11- 07/01 Italiano TERMOREGOLATORI CONFIGURABILI - Manuale d’uso 2 - User’s Manual 10 - Bedienungsanleitung 18 - Manuel d’Utilisation 26 - Manual de Uso 34 - Manual do Usuário 42 English


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    PDF 96x96mm/3 220Vca. 1N4007 gefran 200 -2r gefran 500 controller manual gefran 500 manuale manual gefran 1000 gefran 1101 gefran 800 manual gefran 500 programmazione gefran 500 programming gefran 500 manual gefran 2400

    TIP54

    Abstract: TIP51 TIP52 TIP-52 TIP-54 e40V TIP53 switching ic 5 Amper
    Text: ¿2&M0SPEC HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN TIP51 TIP52 TIP53 TIP54 . designed for line operated audio output amplifier, and switching power supply drivers applications. FEATURES: * Collector-Emitter Sustaining Voltage -250-400V Min *3A R ated Collector Current


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    PDF -250-400V 200mA TIP51 TIP52 TIP53 TIP54 -TIP51-TIP52 TIP54 TIP-52 TIP-54 e40V switching ic 5 Amper

    TIP50

    Abstract: npn 1 amper TIP49 TIP47 TIP48 200 watts audio amp power transistors
    Text: MOS PEC HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN TIP47 TIP48 TIP49 TIP50 . designed for line operated audio output amplifier, and switching power supply drivers applications. FEATURES: * Collector-Emitter Sustaining Voltage -250-400V Min * 1 A Rated Collector Current


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    PDF -250-400V 10MHz 200mA TIP47 TIP48 TIP49 TIP50 npn 1 amper 200 watts audio amp power transistors

    Untitled

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5801 HIGH VOLTAGE COLOR DISPLAY HORIZONTAL DEFLECTION OUTPUT DAMPER DIODE BUILT IN TO-3PF FEATURES • • • • High breakdown Voltage (VCBo=1500V) High Speed Sw itching (tF=0.1(is typ) W ide S.O .A For C -M on ito r (48KHz) & C -TV (-2 1 ")


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    PDF KSC5801 48KHz)

    Diode fast 8 amper

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5386 HIGH VOLTAGE COLOR DISPLAY HORIZONTAL DEFLECTION OUTPUT DAMPER DIODE BUILT IN TO-3PF FEATURES • • • • High breakdown Voltage (V Cbo = 1 5 0 0 V ) High Speed Sw itching (tF=0 .1 jis typ) W ide S.O .A


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    PDF KSC5386 48KHz) Diode fast 8 amper

    TRANSISTOR C875

    Abstract: C875 transistor 2N3262 RCA-2N3262 2n3262 rca
    Text: File No. 56 R F Pow er T ra n s is to rs Solid State Division 2N3262 For High-Voltage, RCA-2N3262 is a triple-diffused planar trans­ istor of the silicon n-p-n type intended for highvoltage, high-frequency pulse amplifiers and highv o l t a g e s a t u r a t e d s w i t c h e s in m i l i t a r y an d


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    PDF 2N3262 RCA-2N3262 2N3262 2CS-I2742 TRANSISTOR C875 C875 transistor 2n3262 rca

    TL3019

    Abstract: D44C5 D44C3 d44c6 044C12 D44C9 D44C10 D44C11 D44C4 D44C7
    Text: Silicon Power Pac Transistors “ Color Molded” The General Electric D44C is a red, silicone plastic encapsulated, power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies


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    PDF O-220 TL3019 D44C5 D44C3 d44c6 044C12 D44C9 D44C10 D44C11 D44C4 D44C7

    umi 150 5A 250V

    Abstract: D67DE5 D67DE7
    Text: 7 29 4 62 1 POW EREX IN C m NEREX \ ] E | T H 'i M t i E l 00051=11 ; • Powerex, Inc., Hlllis Street, Vbungwood, Pennsylvania 15697 412) 925-7272 •_ . I | -[~ 3 3 - £ 3 “ ¡f* o ^ S tâ â f t Fast Switching Singlé Darlington TransistorModule 100 Ampeies


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    PDF 500-600-700Voà D67DE umi 150 5A 250V D67DE5 D67DE7

    d67a

    Abstract: D67DE5 umi 150 5A 250V D67DE7 150A 3D D67DE D67DE6 powerex ks Lc 75421
    Text: 7 2 9 4 6 2 1 POWEREX I NC mMBXEx ’; DE | 7 5 ^ 2 1 00051=11 I | ¡f* . :;.o ^ â îM Powe rex, In c., Hlllis Stree t, Vbungwood, Pennsylvania 15697 412 925-7272 Fast Switching Singlé Darlington TransistorModule 100 A m p e ie s -'r 5 0 0 -600-700 V o lts .


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    PDF D67DI 500-600-700Voà D67DE d67a D67DE5 umi 150 5A 250V D67DE7 150A 3D D67DE6 powerex ks Lc 75421

    D44C5

    Abstract: ge d45c8 GE D44C9 D44C6 D44C3 TL3019 D44* general electric npn to-220 D44C4 d44c9 D44* npn
    Text: S IL IC O N POWER T R A N S IS T O R S COMPLEMENTARY - 4 AMPERES G E Type NPN PNP D44C1 - - D44C3 311.0 V CEO Min. V 30 •c Cont. (A) @ IV , ¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 10 30.0 - 30 -¿.0 25 _ 30.0 30 4.0 40 120 71) D45C2 30.0


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    PDF 200mA D44C1 D45C1 D44C2 D45C2 D44C3 D45C3 D44C4 D45C4 D44C5 ge d45c8 GE D44C9 D44C6 TL3019 D44* general electric npn to-220 d44c9 D44* npn

    information applikation mikroelektronik

    Abstract: information applikation A301D VEB mikroelektronik mikroelektronik applikation "halbleiterwerk frankfurt" Mikroelektronik Information Applikation "information applikation" mikroelektronik DDR Kombinat VEB A 301
    Text: ' \ INFORMATION APPLIKATION MIKROELEKTRONIK Information-Applikation Aufbau, E igenschaften und Anwendung d e s integrierten Initiator-S chaltkreises A 301 D M ik ro e le k tro n ik H e ft 2 veb halblelterwerk frankfurt/oder le itb e trie b im veb K om binat m ik ro elek tro n ik


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