Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 200 WATT 28 V 0-30 MHZ Search Results

    TRANSISTOR 200 WATT 28 V 0-30 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 200 WATT 28 V 0-30 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor MRF321

    Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
    Text: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc


    Original     		PDF MRF321/D MRF321 transistor MRF321 JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04

    MRF321

    Abstract: ferroxcube 56-590-65
    Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.


    Original     		PDF MRF321 400MHz 1N4001 56-590-65/4B) VK200-19/4B MRF321 ferroxcube 56-590-65

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
    Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high


    Original     		PDF MRF20060/D MRF20060 MRF20060S MRF20060 MRF20060S RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x

    SLD-2083CZ

    Abstract: 915 MHz RFID SLD2083CZ GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2
    Text: SLD-2083CZ SLD-2083CZ 12 Watt Discrete LDMOS FET in Ceramic Package 12 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS Package: RF083 Product Description Features „ „ „ 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz


    Original     		PDF SLD-2083CZ RF083 SLD-2083CZ SLD2083CZ 600S120FT250XT 600S6R8BT250XT 0603CS-16NXJB 0603CS-1N6XJB 0603CS-4N7XJB 915 MHz RFID GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2

    MRF321

    Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321
    Text: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc


    Original     		PDF MRF321/D MRF321 MRF321/D* MRF321 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this


    Original     		PDF MRF20030/D MRF20030 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030

    transistor MRF321

    Abstract: JMC 1200
    Text: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts


    Original     		PDF MRF321/D MRF321 MRF321 MRF321/D* MRF321/D transistor MRF321 JMC 1200

    ATC100B

    Abstract: MAPLST2122-090CF transistor f1
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 MAPLST2122-090CF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power


    Original     		PDF MAPLST2122-090CF 28VDC, -45dB 096MHz) 2110MHz) ATC100B MAPLST2122-090CF transistor f1

    Untitled

    Abstract: No abstract text available
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 2/18/2003 MAPLST2122-090WF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power


    Original     		PDF MAPLST2122-090WF 28VDC, -45dB 096MHz) 2110MHz)

    MRF327

    Abstract: 80WF
    Text: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base


    Original     		PDF MRF327 AR120NA MRF327 80WF

    PH0810-35

    Abstract: Transistor c54 F1 J37 transistor 431 N cl 740
    Text: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration


    Original     		PDF PH081 53dBm PH0810-35 lN4245 PH0810-35 Transistor c54 F1 J37 transistor 431 N cl 740

    F1 J37

    Abstract: b 595 transistor PH1516-60 PHI516160 wacom PHI516
    Text: * z-,-3 y-z =: .-= z =z = an AMP company Wireless Bipolar Power Transistor, 1450 - 1550 MHz 60W PHI516160 Features Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP Class A: +53 dBm Typ 3rd Order Intercept Point


    Original     		PDF PHI516160 F1 J37 b 595 transistor PH1516-60 PHI516160 wacom PHI516

    COUGAR LOW NOISE AMPLIFIER

    Abstract: No abstract text available
    Text: High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data CTO-565 Features Description Pin Configuration • 1 Watt Output Power The CTO-565 is a high gain, high efficiency , Class A 1 Watt amplifier designed to provide broadband power for a wide variety of


    Original     		PDF CTO-565 CTO-565 COUGAR LOW NOISE AMPLIFIER

    Johanson Piston Trimmer

    Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
    Text: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc


    Original     		PDF MRF327/D MRF327 Johanson Piston Trimmer J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier

    jmc 5201

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts


    OCR Scan     		PDF MRF321 jmc 5201

    vk200 coil

    Abstract: FERROXCUBE VK200 jmc 5201
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts


    OCR Scan     		PDF MRF321 vk200 coil FERROXCUBE VK200 jmc 5201

    D73 transistor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc


    OCR Scan     		PDF MRF321 MRF321 b3b72S5 D73 transistor

    rohm mtbf

    Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


    OCR Scan     		PDF 1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861

    1417-2

    Abstract: Load VSWR tolerance CAV 444 1417 ic
    Text: 1417-2 2 Watt "28 Volts’ Class c CHz TECHNOLOGY »FMicKowAVE silicon powe > T»*N5HTo«i M ic ro w a v e 1 4 0 0 - 1 7 0 0 GENERAL DESCRIPTION M H z CASE OUTLINE The 1417-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is


    OCR Scan     		PDF RD11110 000QD34 1417-2 Load VSWR tolerance CAV 444 1417 ic

    DBT134

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


    OCR Scan     		PDF MRF20030R/D DBT134

    MRF327

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band


    OCR Scan     		PDF 80-mil-Thick MRF327

    vk200 coil

    Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON


    OCR Scan     		PDF MRF321 vk200 coil jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200

    MRF327

    Abstract: Johanson Piston Trimmer
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band


    OCR Scan     		PDF MRF327 80-mil-Thick MRF327 Johanson Piston Trimmer

    capacitor 50uf

    Abstract: balun 50 ohm DU28200M transistor c s z 44 v
    Text: m an A M P com pany RF MOSFET Power Transistor, 200W, 28V 2 - 1 7 5 MHz DU28200M V2.00 Features • • • • • - A - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices


    OCR Scan     		PDF DU28200M 13PARTS 500pF 2700OHM DU28200M 1000pF capacitor 50uf balun 50 ohm transistor c s z 44 v