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    TRANSISTOR 2108A Search Results

    TRANSISTOR 2108A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2108A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MG100Q2YS40

    Abstract: No abstract text available
    Text: MG100Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 Unit: mm High Power Switching applications Motor Control Applications High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		MG100Q2YS40 2-108A2A MG100Q2YS40 PDF

    dc to dc chopper using igbt

    Abstract: TOSHIBA IGBT DATA BOOK MG100Q1ZS40
    Text: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		MG100Q1ZS40 2-108A3A dc to dc chopper using igbt TOSHIBA IGBT DATA BOOK MG100Q1ZS40 PDF

    TRANSISTOR 2108A

    Abstract: 2108a equivalent of 2108A transistor 2108a transistor TR 2108A 2SA1724 EN4698 marking 215 FP215 ic 2108a
    Text: Ordering number:EN4698 FP215 PNP Epitaxial Planar Silicon Composite Transistors High-Frequency Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the PCP package currently in use, improving the mounting efficiency greatly.


    Original     		EN4698 FP215 FP215 2SA1724, FP215] TRANSISTOR 2108A 2108a equivalent of 2108A transistor 2108a transistor TR 2108A 2SA1724 EN4698 marking 215 ic 2108a PDF

    Toshiba transistor Ic 100A

    Abstract: MG100Q1JS40 2-108A4A
    Text: MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		MG100Q1JS40 2-108A4A Toshiba transistor Ic 100A MG100Q1JS40 2-108A4A PDF

    MG75Q2YS42

    Abstract: No abstract text available
    Text: MG75Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS42 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE(sat) = 4.0V (Max) Enhancement-mode


    Original     		MG75Q2YS42 2-108A2A MG75Q2YS42 PDF

    MG75Q2YS42

    Abstract: No abstract text available
    Text: MG75Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS42 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage : VCE(sat) = 4.0V (Max)


    Original     		MG75Q2YS42 2-108A2A MG75Q2YS42 PDF

    MG100Q2YS40

    Abstract: No abstract text available
    Text: MG100Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 Unit: mm High Power Switching applications Motor Control Applications l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage : VCE (sat) = 4.0V (Max)


    Original     		MG100Q2YS40 2-108A2A MG100Q2YS40 PDF

    MG100Q1JS40

    Abstract: No abstract text available
    Text: MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode


    Original     		MG100Q1JS40 2-108A4A MG100Q1JS40 PDF

    mg100Q1ZS40

    Abstract: No abstract text available
    Text: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode


    Original     		MG100Q1ZS40 2-108A3A mg100Q1ZS40 PDF

    MG100Q1ZS40

    Abstract: No abstract text available
    Text: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode


    Original     		MG100Q1ZS40 2-108A3A MG100Q1ZS40 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode


    Original     		MG100Q1JS40 2-108A4A PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    TRANSISTOR 2108A

    Abstract: 2108A
    Text: Raytheon Electronics Semiconductor Division L M 1 08A /L H 2108A Precision O perational A m plifiers Features Low input bias current — 2 nA Low input offset current — 200 pA Low input offset voltage — 500|iV Low input offset drift — 5 |iV/°C Wide supply range — ±3V to ±20V


    OCR Scan     		MIL-STD-883B LM108A DS6000108A TRANSISTOR 2108A 2108A PDF

    LB 124D transistor

    Abstract: TAA970 78L12 cj ne553 TBA915 78M06CG signetics Analogue IC 1977 75S208 MLM311P1 78M08CG
    Text: pages index 2- 3 com petitors cross-reference 4- 9 selection guide 10-13 abridged data 14-24 d iffe re n tia l am plifiers abridged data 25 com parators selection guide 26-27 abridged data 28-31 selection guide 32-35 abridged data 36-39 general industrial


    OCR Scan     		SO-16 LB 124D transistor TAA970 78L12 cj ne553 TBA915 78M06CG signetics Analogue IC 1977 75S208 MLM311P1 78M08CG PDF

    2-108A4A

    Abstract: No abstract text available
    Text: MG100Q1JS40 U nit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • • • • High Input Impedance High Speed : tf= 0 .5 //s Max. trr = 0.5/iS (Max.) Low Saturation Voltage : VCE (sat) = 4 0V (Max.) Enhancement-M ode The Electrodes are Isolated from Case.


    OCR Scan     		MG100Q1JS40 2-108A4A 2-108A4A PDF

    LM1808

    Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.


    OCR Scan     		LM741 MIL-M-38510, M-38510/ 10101BCC. MIL-M-38510 L-M-38510 LM1808 LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor PDF

    TRANSISTOR 2108A

    Abstract: 2108a 2108a transistor MG75Q2YS1 transistor lf TR 2108A I812
    Text: GTR MODULL SILICON N CHANNEL IGBT MG75Q2YS1 HIGH POWER SWITCHING APPLICATIONS. Unit in nun MOTOR CONTROL APPLICATIONS. 4 - F A S T - O N - T A B # ! 10 • High Input Impedance • High Speed: tf=0.5ys Max. trr =0 .5fis(Max.) • Low Saturation Voltage: V q E( sat )~i>•0V(Max.


    OCR Scan     		MG75Q2YS1 TRANSISTOR 2108A 2108a 2108a transistor MG75Q2YS1 transistor lf TR 2108A I812 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q1JS40 HIGH POWER SWITCHING APPLICATIONS. Unit in mm CHOPPER APPLICATIONS. 3 -M 5 2 -f*S .6 ± 0 .3 High Input Impedance High Speed : tf= 0.5^ s Max. trr=0.5/,!S (Max.) Low Saturation Voltage


    OCR Scan     		MG100Q1JS40 2-108A4 MG1Q0Q1JS40 PDF

    MG100Q1JS40

    Abstract: No abstract text available
    Text: T O S H IB A MG100Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 0 0 Q 1 J S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. 3-M 5 • High Input Impedance • High Speed : tf=0.5/*s Max. 2 -Ç Ô 5 . 6 ± 0 . 3 trr= 0.5/^s (Max.)


    OCR Scan     		MG100Q1JS40 2-108A4A MG100Q1JS40 PDF

    TRANSISTOR 2108A

    Abstract: 2108a 2108a transistor equivalent of 2108A transistor ic 2108a common collector PNP TR 2108A 2108a marking
    Text: Ordering number: EN4698 FP215 No.4698 PNP Epitaxial Planar Silicon Composite Transistors SA\YO High-Frequency Amp, Differential Amp Applications i F eatu re s • Composite type with 2 transistors contained in the PCP package currently in use, improving the


    OCR Scan     		EN4698 FP215 FP215 2SA1724, TRANSISTOR 2108A 2108a 2108a transistor equivalent of 2108A transistor ic 2108a common collector PNP TR 2108A 2108a marking PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG100Q2YS40 TOSHIBA GTR MODULE M r ; 1 n n SILICON N CHANNEL IGBT n ? Y < ; z L n Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 - ¿’A S T - O N - T A B # 1 1 0 • • High Input Impedance High Speed : tf=0.5/^s Max.


    OCR Scan     		MG100Q2YS40 2-108A2A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage


    OCR Scan     		MG100Q1JS40 2-108A4A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q1JS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG100Q1 JS40 M G 1 0 0 Q 1 JS 4 0 HIGH P O W E R SWITCHING APPLICATIONS U nit in mm CHO PPER APPLICATIONS. 2~JZ<5 6 ± 0 3 • High Input Impedance • High Speed : t f= 0 .5 ^ s (Max.)


    OCR Scan     		MG100Q1JS40 MG100Q1 2-108A4A Tc-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage


    OCR Scan     		MG100Q1JS40 2-108A4A 100jus PDF