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    TRANSISTOR 2201 Search Results

    TRANSISTOR 2201 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2201 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 2201

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 May 31 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


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    M3D427 BLF2048 BLF2048 OT539A 125108/00/01/pp8 transistor 2201 PDF

    Capacitor Tantal SMD

    Abstract: capacitor 0,1 k 250 mkt philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


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    M3D427 BLF2048 OT539A) 125108/00/01/pp11 Capacitor Tantal SMD capacitor 0,1 k 250 mkt philips PDF

    Capacitor Tantal SMD

    Abstract: Tantal SMD transistor SMD 2201
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Oct 18 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


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    M3D427 BLF2048 OT539A) 125108/00/01/pp12 Capacitor Tantal SMD Tantal SMD transistor SMD 2201 PDF

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


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    transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide PDF

    Carlo Gavazzi G2120

    Abstract: dupline carlo gavazzi module 2120 transistor 2120 Carlo Gavazzi CHANNEL GENERATOR dupline 128 G21205502 i3 2120
    Text: Input-Module for Elevators Type G 2120 5501 700, G 2120 5502 700 Du line Fieldbus Installationbus • 8-channel transmitter • 8 contact or NPN transistor inputs G2120 5501 or 8 voltage or PNP transistor inputs (G2120 5502) • Open printed circuit board


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    G2120 8047-bracket Carlo Gavazzi G2120 dupline carlo gavazzi module 2120 transistor 2120 Carlo Gavazzi CHANNEL GENERATOR dupline 128 G21205502 i3 2120 PDF

    9635

    Abstract: sige hbt TARF2201 wideband linear amplifier Tx SiGe MMIC
    Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2201 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2201 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


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    TARF2201 50-ohm TAHB09) 30GHz TARF2201 12dBm 900MHz OT343 9635 sige hbt wideband linear amplifier Tx SiGe MMIC PDF

    TRANSISTOR SUBSTITUTION

    Abstract: tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010 CRF-22010-TB RO4003
    Text: CRF-22010-TB Evaluation Board for CRF-22010 Version A Narrowband Features • • • • • • Ready-to-Go RF Amplifier Requires Two Power Supplies Externally Adjustable Gate Bias Voltage Solderless Transistor Changeout Includes Heat Sink, Fan, and Wiring Harness


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    CRF-22010-TB CRF-22010 CRF-22010-TB-A CRF-22010 TRANSISTOR SUBSTITUTION tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010-TB RO4003 PDF

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    nielinger

    Abstract: Fleischmann chebyshev mtt siemens heft MAR 735 mosfet pp Siemens MTT philips 1968 MOSFET dynamic
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 6 6.1 References 4. Hilberg, W., ‘Einige grundsätzliche Betrachtungen zu Breitband-Übertragern’, NTZ, 1966, Heft 9, pp. 527-538. REFERENCES References in the main text


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    transistor 2201

    Abstract: SRA2201M 3001 pnp
    Text: SRA2201M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


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    SRA2201M O-92M KSR-I011-000 -10mA -10mA, transistor 2201 SRA2201M 3001 pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: SRA2201M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


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    SRA2201M O-92M KSR-I011-O KSR-I011-001 PDF

    transistor 2201

    Abstract: No abstract text available
    Text: SRA2201M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


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    SRA2201M SRA2201M O-92M KSR-I011-002 KSR-I011-002 transistor 2201 PDF

    SRA2201M

    Abstract: transistor 2201
    Text: SRA2201M PNP Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and


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    SRA2201M O-92M KSD-R0B012-000 SRA2201M transistor 2201 PDF

    TRANSISTOR C802

    Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


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    PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    XR-2203

    Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
    Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­


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    XR-220172/3/4 XR-2201, XR-2202, XR-2203, XR-2204 500mA XR-1568M XR-1568/XR-1468C XR-1468/1568 XR-2203 XR-2203CP XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for


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    23SbOS PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    A751

    Abstract: DIN 41872 BU205
    Text: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor BU 205 O' SIEMENS A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is


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    fl23SbOS 68000-A751 C--12 A751 DIN 41872 BU205 PDF

    Q68000-A751

    Abstract: TO115 BU205
    Text: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor SIEMENS BU 205 A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is


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    fl23SbOS AKTIENGESELLSCHAFD4838 Q68000-A751 Q68000-A751 TO115 BU205 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLP130 GaAs IRED a PHOTO-TRANSISTOR PR OGR A M M A B L E C ONT ROL LER S AC / D C - I N P U T MODULE TELECOMMUNICATION 'Hie T O S H I B A MINI FLAT C O U P L E R T L P 1 3 0 is a s m l l o u t l i n e coupler, suitable for surface mo u n t assembly. TLP130 consists of a photo transistor, opt i c a l l y


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    TLP130 TLP130 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Untitled

    Abstract: No abstract text available
    Text: SECTION 2 SPECIFICATIONS INTRODUCTION The Digital Signal Processor DSP is fabricated using high-density Complementary Metal Oxide Semiconductor (CMOS) with Transistor-TransistorLogic (TTL) compatible inputs and outputs. This section covers the maximum ratings, thermal characteristics, and electrical characteristics of the DSP96002.


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    DSP96002. DSP96002/D, G14fl47b PDF