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    TRANSISTOR 2226 Search Results

    TRANSISTOR 2226 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2226 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR 2226

    Abstract: 2226 transistor UNR2227
    Text: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 0.4±0.2 2.90+0.20 –0.05 (R2)   6.8 kΩ 1.1+0.2


    Original     		PDF UNR2225/2226/2227 UN2225/2226/2227) UNR2225 UNR2226 UNR2227 SJH00040AED TRANSISTOR 2226 2226 transistor

    2226 transistor

    Abstract: ic MARKING FZ UNR2225 UNR2226 UNR2227 transistor 2227
    Text: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 2.90+0.20 –0.05 (R2)   6.8 kΩ


    Original     		PDF UNR2225/2226/2227 UN2225/2226/2227) UNR2225 UNR2226 UNR2227 2226 transistor ic MARKING FZ UNR2225 UNR2226 UNR2227 transistor 2227

    RN1221

    Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227 2226 transistor
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = −800mA) With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN1221 RN1227 RN2223 RN2227 2226 transistor

    RN1221

    Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z High current type (IC(MAX) = −800mA) z With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN1221 RN1227 RN2223 RN2227

    Untitled

    Abstract: No abstract text available
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = −800mA) z With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA)

    RN2227

    Abstract: 2226 transistor transistor 2227 RN2222 RN2224 2227 RN1221 RN1227 RN2221 RN2223
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = −800mA) With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN2227 2226 transistor transistor 2227 2227 RN1221 RN1227 RN2223

    800ma

    Abstract: RN2221 RN2222
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = −800mA) l With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) 800ma

    BXO9327

    Abstract: No abstract text available
    Text: Available as: VOLTAGE CONTROLLED OSCILLATOR 2200 TOM9327 - 2300 MHz TOM9327, 4 Pin TO-8 T4 TON9327, 4 Pin Surface Mount (SM3) BXO9327, Connectorized Housing (H1) Features ! ! ! ! Low Noise Bipolar Transistor Linear Tuning Operating Case Temp. -30 ºC to + 55 ºC


    Original     		PDF OM9327 OM9327, ON9327, BXO9327, BXO9327

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-


    Original     		PDF MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3

    UT-141C-50-SP

    Abstract: 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H
    Text: Document Number: MRF6P3300H Rev. 2, 10/2008 Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. MRF6P3300HR3 MRF6P3300HR5 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre-


    Original     		PDF MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 UT-141C-50-SP 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    SIT Static Induction Transistor

    Abstract: sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30
    Text: NEW PRODUCTS UPDATE T O K lii Small-sized Static Induction Transistor SIT with high withstand voltage 'T - S I - i', led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high


    OCR Scan     		PDF 200ns) 35max. TC-20 TC-30 E08-875-1479 2-26A UD-04E N920920P1 SIT Static Induction Transistor sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20157 20 Watts, 1.35-1.85 GHz Cellular Radio RF Power Transistor Description Key Features The 20157 is a Class C, NPN, common base RF Power Transistor intended for 22-26 VDC operation across the 1.35 -1.85 GHz frequency band. It is rated at 20 Watts minimum output


    OCR Scan     		PDF 85GHz)

    SC 2272

    Abstract: transistor D 2581 724 motorola NPN Transistor motorola transistor r 724 LT4772 t313 Motorola Transistor D 799 motorola ECM 632 transistor motorola transistor 764
    Text: MOTORCLA SC XSTRS/R F 1EE D | b3t,72SH Gafl72S3 T | MOTOROLA • SEMICONDUCTOR TECHNICAL DATA LT4772 The RF Line N P N Silicon High Frequency Transistor 2 Iß = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed primarily for use in low noise, small-signal amplifiers in satellite down con­


    OCR Scan     		PDF GQfl72S3 SC 2272 transistor D 2581 724 motorola NPN Transistor motorola transistor r 724 LT4772 t313 Motorola Transistor D 799 motorola ECM 632 transistor motorola transistor 764

    2226K

    Abstract: No abstract text available
    Text: h -y > v 2SD2226K/2SD2351 /Transistors $ 2S D 2226K 2SD2351 if c T * * '> 7 * 7 l/ - : J - ïf ê N P N y ' j 3 > Epitaxial Planar N P N Silicon Transistor -jfê 'J v fï-^ itifiÆ /G e n e ra l Small Signal Amp. • W fiT l'iilSI/ 'D im e n sio n s Unit : mm


    OCR Scan     		PDF 2SD2226K/2SD2351 2226K 2226K 2SD2351 50mA/5m 2SD2226K/2SD2351

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    RN2223

    Abstract: ko iq
    Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)


    OCR Scan     		PDF RN2221-RN2227 RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 --800mA) RN1221 RN2223 ko iq

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2SD2226K

    Abstract: 2SD2351 VEBO-12V
    Text: h 7 >vZ. £ /Transistors 2SD2226K/2SD2351 2SD 2226K 2SD2351 x e $ * y 7 J l ' 7 U - ? B N P N y ,j 3 > b 7 > v Z $ Epitaxial Planar NPN Silicon Transistor —flS 'h it^ iB ig ffl/G e n e ra l Small Signal Amp. * ^ ^ J i & B I / D i m e n s i o n s Unit : mm


    OCR Scan     		PDF 2SD2226K/2SD2351 2SD2226K 2SD2351 50mA/5mA) 2SD2226K SC-59 2SD2351 VEBO-12V

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A RN2221 ~ R N 2 2 2 7 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS High C urrent Type (10 (MAX)= —800mA)


    OCR Scan     		PDF RN2221 RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 800mA) RN1221

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


    OCR Scan     		PDF 2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503