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    TRANSISTOR 2N5087 Search Results

    TRANSISTOR 2N5087 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N5087 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hFE-200 to-92 npn

    Abstract: 2N5087 2N5086 2n5088 transistor hFE-200 transistor PNP 2N5088 2N5089 hFE-200
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


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    PDF 2N5086 2N5087 2N5088 2N5089 100Hz, hFE-200 to-92 npn 2N5087 2n5088 transistor hFE-200 transistor PNP 2N5089 hFE-200

    2N5087

    Abstract: transistor 2N5086 2N5086 2n5088 transistor 2N5088 equivalent 2N5088 2N5089 ST transistor Semtech Electronics
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


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    PDF 2N5086 2N5087 2N5088 2N5089 2N5087 transistor 2N5086 2n5088 transistor 2N5088 equivalent ST transistor Semtech Electronics

    hFE-200 to-92 npn

    Abstract: 2N5087 hFE-200 transistor PNP 2N5086 2n5088 transistor ST transistor 2N5088 2N5089 hFE-150
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


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    PDF 2N5086 2N5087 2N5088 2N5089 100Hz, hFE-200 to-92 npn 2N5087 hFE-200 transistor PNP 2n5088 transistor ST transistor 2N5089 hFE-150

    2N5087

    Abstract: transistor 2N5086 2N5087 equivalent 2N5086 2n5088 transistor 2N5088 2N5089
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


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    PDF 2N5086 2N5087 2N5088 2N5089 2N5087 transistor 2N5086 2N5087 equivalent 2n5088 transistor

    2N5088 equivalent

    Abstract: ST transistor 2n5088 transistor 2N5086 2N5087 2N5088 2N5089 hfe 300
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


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    PDF 2N5088 2N5089 2N5086 2N5087 100Hz, 2N5088 equivalent ST transistor 2n5088 transistor 2N5087 2N5089 hfe 300

    2N5089 equivalent

    Abstract: 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088 2N5086 2N5088
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


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    PDF 2N5088 2N5089 2N5086 2N5087 100Hz, 2N5089 equivalent 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088

    2N5088 equivalent

    Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


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    PDF 2N5088 2N5089 2N5086 2N5087 2N5088 equivalent 2n5088 transistor 2N5089 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024

    2N5088

    Abstract: 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 2N5086 2N5087 st2n5088 2N5088 power
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


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    PDF 2N5088 2N5089 2N5086 2N5087 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 st2n5088 2N5088 power

    2N5087

    Abstract: 2N5088 BP317 transistor 2N5087
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5087 PNP general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification PNP general purpose transistor


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    PDF M3D186 2N5087 2N5088. MAM280 SCA54 117047/00/02/pp8 2N5087 2N5088 BP317 transistor 2N5087

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5087 TRANSISTOR PNP 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


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    PDF 2N5087 -10mA -10mA 100MHz

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


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    PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    BC108 characteristic

    Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


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    PDF MUN5211DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 characteristic BC237 c 2026 y transistor msc2295 marking 7m SOT-323

    BC237

    Abstract: equivalent to BC177 2n6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic


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    PDF MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


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    PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    transistor 2n5088

    Abstract: 2N5088 equivalent 2n5088 transistor ic str 6707 STR s 6707 2N5087 2N5088 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistor


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    PDF M3D186 2N5088 2N5087. MAM279 SCA55 117047/00/03/pp8 transistor 2n5088 2N5088 equivalent 2n5088 transistor ic str 6707 STR s 6707 2N5087 2N5088 BP317

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    PDF Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237

    Transistor 2N2905A

    Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


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    PDF MUN5311DW1T1 Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


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    PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    PDF 70/SOT Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    BC237

    Abstract: BC238B MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value


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    PDF PZTA42T1 318E-04, O-261AA MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 BC238B MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: 2N5087 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO Vebo lc Po Tj Tstg 50 50 3 50 625


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    PDF 2N5087 625mW 100pA,

    2n5088 transistor

    Abstract: 2N6088 2N5088 2N5089
    Text: L I< N AMER PHILIPS/DISCRETE SSE D i •" Bi bbSBTBl GG17SGb 7 2N5088 2N5089 T -a^ -ai SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.


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    PDF bbS-3131 001750b 2N5088 2N5089 2N50S6/2N5087. Q017SGÃ 2n5088 transistor 2N6088 2N5089

    Untitled

    Abstract: No abstract text available
    Text: i i N ANER P H I L I P S / D I S C R E T E SSE D i {□ □53=131 DQ175DI3 7 I 2N5088 2N5089 T - ^ - 2 1 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.


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    PDF DQ175DI3 2N5088 2N5089 2N5086/2N5087. T-29-21

    2N5086

    Abstract: 2N5087
    Text: 2N5086/5087 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • CoHector-Emitter VoHage: VCeo“ 50V • Collector Dissipation: Pc max »625mW ABSOLUTE MAXIMUM RATINGS (TA-25t:) C haracteristic Sym bol Collector-Base Voltage Collector-Emttter Voltage


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    PDF 2N5086/5087 625mW TA-25t: 2N5086 2N5087 2N5086 2N5087