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    TRANSISTOR 2N5088 Search Results

    TRANSISTOR 2N5088 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N5088 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hFE-200 to-92 npn

    Abstract: 2N5087 2N5086 2n5088 transistor hFE-200 transistor PNP 2N5088 2N5089 hFE-200
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


    Original     		PDF 2N5086 2N5087 2N5088 2N5089 100Hz, hFE-200 to-92 npn 2N5087 2n5088 transistor hFE-200 transistor PNP 2N5089 hFE-200

    2N5087

    Abstract: transistor 2N5086 2N5086 2n5088 transistor 2N5088 equivalent 2N5088 2N5089 ST transistor Semtech Electronics
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


    Original     		PDF 2N5086 2N5087 2N5088 2N5089 2N5087 transistor 2N5086 2n5088 transistor 2N5088 equivalent ST transistor Semtech Electronics

    hFE-200 to-92 npn

    Abstract: 2N5087 hFE-200 transistor PNP 2N5086 2n5088 transistor ST transistor 2N5088 2N5089 hFE-150
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


    Original     		PDF 2N5086 2N5087 2N5088 2N5089 100Hz, hFE-200 to-92 npn 2N5087 hFE-200 transistor PNP 2n5088 transistor ST transistor 2N5089 hFE-150

    2N5087

    Abstract: transistor 2N5086 2N5087 equivalent 2N5086 2n5088 transistor 2N5088 2N5089
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


    Original     		PDF 2N5086 2N5087 2N5088 2N5089 2N5087 transistor 2N5086 2N5087 equivalent 2n5088 transistor

    2N5088 equivalent

    Abstract: ST transistor 2n5088 transistor 2N5086 2N5087 2N5088 2N5089 hfe 300
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


    Original     		PDF 2N5088 2N5089 2N5086 2N5087 100Hz, 2N5088 equivalent ST transistor 2n5088 transistor 2N5087 2N5089 hfe 300

    2N5089 equivalent

    Abstract: 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088 2N5086 2N5088
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


    Original     		PDF 2N5088 2N5089 2N5086 2N5087 100Hz, 2N5089 equivalent 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088

    2N5088 equivalent

    Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


    Original     		PDF 2N5088 2N5089 2N5086 2N5087 2N5088 equivalent 2n5088 transistor 2N5089 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024

    2N5088

    Abstract: 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 2N5086 2N5087 st2n5088 2N5088 power
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


    Original     		PDF 2N5088 2N5089 2N5086 2N5087 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 st2n5088 2N5088 power

    transistor 2n5088

    Abstract: 2N5088 equivalent 2n5088 transistor ic str 6707 STR s 6707 2N5087 2N5088 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistor


    Original     		PDF M3D186 2N5088 2N5087. MAM279 SCA55 117047/00/03/pp8 transistor 2n5088 2N5088 equivalent 2n5088 transistor ic str 6707 STR s 6707 2N5087 2N5088 BP317

    2N5088

    Abstract: 2N5089 2N5088 equivalent 2n5088 transistor transistor 2N5088 2N5089 equivalent transistor amplifier 5v to 15v 5089 silicon npn transistor 2N4403 NPN Transistor transistor 2n5088 equivalent
    Text: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF 2N5088/5089 2N5088: 2N5089: 625mW 2N5088 2N5089 2N5088 2N5089 2N5088 equivalent 2n5088 transistor transistor 2N5088 2N5089 equivalent transistor amplifier 5v to 15v 5089 silicon npn transistor 2N4403 NPN Transistor transistor 2n5088 equivalent

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5088 TRANSISTOR NPN 1. EMITTER 2. BASE FEATURES z General Purpose Amplifier Transistor z High DC Current Gain 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 2N5088 100KHz 20MHz

    2N5087

    Abstract: 2N5088 BP317 transistor 2N5087
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5087 PNP general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification PNP general purpose transistor


    Original     		PDF M3D186 2N5087 2N5088. MAM280 SCA54 117047/00/02/pp8 2N5087 2N5088 BP317 transistor 2N5087

    2N5088 equivalent

    Abstract: 2n5088 transistor transistor 2N5210 2N5210 2N5088
    Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N5210 625mW 2N5088 100MHz Width300s, 2N5088 equivalent 2n5088 transistor transistor 2N5210 2N5210

    100khz 5v transistor npn

    Abstract: No abstract text available
    Text: 2N5088 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ceo =30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N5088 625mW 100pA, 100khz 5v transistor npn

    Untitled

    Abstract: No abstract text available
    Text: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2N5088: 3 0 V 2N5089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic Collector-Base Voltage


    OCR Scan     		PDF 2N5088: 2N5089: 625mW 300ns, b4142 005SD33 2N5088/5089

    2n5088

    Abstract: 2N5089 2n6088 transistor 2N5088 2n5088 transistor 2N608
    Text: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V ceo= 2N5088:30V 2N6088: 25V • Collector Dissipation: Pc max '=625mW ABSOLUTE MAXIMUM RATINGS <TA=25t:) C haracteristic Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF 2N5088/5089 2N5088 2N6088: 625mW 2N5089 2N50S8 2N5089 2N5088 2n6088 transistor 2N5088 2n5088 transistor 2N608

    Untitled

    Abstract: No abstract text available
    Text: i i N ANER PHILIPS/DISCRETE b=JE » bb53T31 0DSfllb5 D67 2N5088 APX SILICON PLANAR EPITAXIAL TRANSISTOR NPN small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary type is 2N5086. QUICK REFERENCE DATA


    OCR Scan     		PDF bb53T31 2N5088 2N5086.

    2n5088 transistor

    Abstract: 2N6088 2N5088 2N5089
    Text: L I< N AMER PHILIPS/DISCRETE SSE D i •" Bi bbSBTBl GG17SGb 7 2N5088 2N5089 T -a^ -ai SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.


    OCR Scan     		PDF bbS-3131 001750b 2N5088 2N5089 2N50S6/2N5087. Q017SGÃ 2n5088 transistor 2N6088 2N5089

    2NS089

    Abstract: 2n 5088 transistor 2N5088 STC 5089
    Text: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N5088: 30V 2NS089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4.5 50 62 5 150 -5 5 ^ 1 5 0


    OCR Scan     		PDF 2N5088/5089 2N5088: 2NS089: 625mW 500mA 20MHz 2NS089 2n 5088 transistor 2N5088 STC 5089

    KSP8097

    Abstract: 10KO 2N5088
    Text: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=40V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF KSP8097 625mW 2N5088 100/jA, 100fA, DDP51Ã KSP8097 10KO

    Untitled

    Abstract: No abstract text available
    Text: i i N ANER P H I L I P S / D I S C R E T E SSE D i {□ □53=131 DQ175DI3 7 I 2N5088 2N5089 T - ^ - 2 1 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.


    OCR Scan     		PDF DQ175DI3 2N5088 2N5089 2N5086/2N5087. T-29-21

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N5210 625mW 2N5088 100/iA, 100KHZ 20/iA 22KSJ