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    TRANSISTOR 2N50E Search Results

    TRANSISTOR 2N50E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N50E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    t2n50e

    Abstract: 2n50e transistor 2N50E MTD2N50ET4 MTD2N50E1 MTD2N50 AN569 MTD2N50E
    Text: MTD2N50E Preferred Device Power MOSFET 2 Amps, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N50E r14525 MTD2N50E/D t2n50e 2n50e transistor 2N50E MTD2N50ET4 MTD2N50E1 MTD2N50 AN569 MTD2N50E

    t2n50e

    Abstract: 2n50e transistor 2N50E MTD2N50ET4
    Text: MTD2N50E Preferred Device Power MOSFET 2 Amps, 500 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N50E r14525 MTD2N50E/D t2n50e 2n50e transistor 2N50E MTD2N50ET4

    2n50e

    Abstract: transistor 2N50E 4-490 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD2N50E TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te r m in a tio n


    OCR Scan     		PDF 2N50E 2n50e transistor 2N50E 4-490 MOTOROLA

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29