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    TRANSISTOR 2N6520 Search Results

    TRANSISTOR 2N6520 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N6520 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6520 DIODES

    Abstract: 2N6520 transistor 2N6520
    Text: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 25


    Original     		PDF 2N6520 -10mA -30mA -50mA -100mA -10mA, -20mA, -30mA, -50mA, 2N6520 DIODES 2N6520 transistor 2N6520

    Untitled

    Abstract: No abstract text available
    Text: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 25


    Original     		PDF 2N6520

    Untitled

    Abstract: No abstract text available
    Text: 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Symbol


    Original     		PDF 2N6520 -350V 625mW 2N6517

    2N6520

    Abstract: 2N6520 DIODES transistor 2N6520 2N6517
    Text: 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Symbol


    Original     		PDF 2N6520 -350V 625mW 2N6517 2N6520 2N6520 DIODES transistor 2N6520 2N6517

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    Untitled

    Abstract: No abstract text available
    Text: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • • High Voltage Transistor Collector-Emitter Voltage: VCEO = 350V Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)


    Original     		PDF 2N6517 625mW 2N6520

    2N6517C

    Abstract: 2N6517 transistor 2n6517 2N6520 c 458 c transistor
    Text: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • High Voltage Transistor Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF 2N6517 625mW 2N6520 2N6517C 2N6517C 2N6517 transistor 2n6517 2N6520 c 458 c transistor

    transistor 2n6517

    Abstract: No abstract text available
    Text: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • High Voltage Transistor Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF 2N6517 625mW 2N6520 2N6517C transistor 2n6517

    2N6517

    Abstract: 2N6520
    Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF 2N6520 -350V 625mW 2N6517 2N6517 2N6520

    2N6520BU

    Abstract: 2N6520 2N6520TA
    Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF 2N6520 -350V 625mW 2N6517 2N6520 O-92-3 2N6520BU 2N6520TA

    2N6517

    Abstract: 2N6520
    Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF 2N6520 -350V 625mW 2N6517 2N6517 2N6520

    2N6517

    Abstract: 2N6520
    Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF 2N6520 -350V 625mW 2N6517 2N6517 2N6520

    Untitled

    Abstract: No abstract text available
    Text: 2N6519 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 25°C


    Original     		PDF 2N6519 2N6520

    Untitled

    Abstract: No abstract text available
    Text: 2N6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 25°C


    Original     		PDF 2N6518 2N6520

    Untitled

    Abstract: No abstract text available
    Text: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C


    OCR Scan     		PDF 2N6520

    d1711

    Abstract: TRANSISTOR D 471 2N6520
    Text: SA MSUNG SEMICONDUCTOR .INC 2N6520 14E D | 0007200 T | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 2N6520 T-29-21 -100/jA, ---T-29-21 d1711 TRANSISTOR D 471

    Untitled

    Abstract: No abstract text available
    Text: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ris tic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C


    OCR Scan     		PDF 2N6520 D0250SG lb414E 002SDS1

    2N6520

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6520 HIGH VOLTAGE TRANSISTOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current Base Current C ollector D issipation


    OCR Scan     		PDF 2N6520 2N6520

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6520 HIGH VOLTAGE TRANSISTOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent Base C urrent C ollecto r D issipation


    OCR Scan     		PDF 2N6520

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6520 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C Characteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector D issipation


    OCR Scan     		PDF 2N6520

    Untitled

    Abstract: No abstract text available
    Text: 2N6519 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25t; C haracteristic Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 251C


    OCR Scan     		PDF 2N6519 2N6520 -100V -50mA, -10mA -100V, -50mA 300fU

    Untitled

    Abstract: No abstract text available
    Text: 2N6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25t: C haracteristic Collector-Base Voltage Collector-Em ttter Voltage Emitter-Base Voltage Collector Currant Base Current Collector Dissipation Derate above 251


    OCR Scan     		PDF 2N6518 2N6520 -150V, -10mA -30mA -50mA -100mA -10mA, -20mA, -30mA,

    Untitled

    Abstract: No abstract text available
    Text: 2N6519 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C


    OCR Scan     		PDF 2N6519 2N6520

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711