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    TRANSISTOR 2N9013 Search Results

    TRANSISTOR 2N9013 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    transistor 2n9013

    Abstract: 2n9013 PJ2N9012
    Text: PJ2N9012 PNP Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION • • • • SOT-23 High total power dissipation PT=625mW High collector Current (Ic=-500mA) Complementary to 2N9013 Excellent hEF Linearity


    Original
    PDF PJ2N9012 OT-23 625mW) -500mA) 2N9013 PJ2N9012CT PJ2N9012CX -100A transistor 2n9013

    2n9013

    Abstract: transistor 2n9013 2N901 transistor 33 transistor pnp Vcbo 25V 2n9013 equivalent PJ2N9012 PJ2N9012CT PJ2N9012CX PT-625mW
    Text: PJ2N9012 PNP Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION • • • • SOT-23 High total power dissipation PT=625mW High collector Current (Ic=-500mA) Complementary to 2N9013 Excellent hEF Linearity


    Original
    PDF PJ2N9012 OT-23 625mW) -500mA) 2N9013 -500mA -50mA -10mA 2n9013 transistor 2n9013 2N901 transistor 33 transistor pnp Vcbo 25V 2n9013 equivalent PJ2N9012 PJ2N9012CT PJ2N9012CX PT-625mW