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    TRANSISTOR 2SA1680 Search Results

    TRANSISTOR 2SA1680 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA1680 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor A1680

    Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. transistor A1680 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680 PDF

    transistor A1680

    Abstract: 2sa1680 TRANSISTOR A1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. O-92MOD transistor A1680 2sa1680 TRANSISTOR A1680 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. PDF

    transistor A1680

    Abstract: 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. transistor A1680 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680 PDF

    transistor A1680

    Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. transistor A1680 A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR PDF

    transistor c4408

    Abstract: c4408 c4408 transistor 2SA1680 2SC4408
    Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		2SC4408 2SA1680 transistor c4408 c4408 c4408 transistor 2SA1680 2SC4408 PDF

    transistor c4408

    Abstract: c4408 transistor C4408
    Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		2SC4408 2SA1680 O-92MOD transistor c4408 c4408 transistor C4408 PDF

    transistor c4408

    Abstract: c4408 c4408 transistor transistor 2Sc4408 2sc4408 2SA1680
    Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		2SC4408 2SA1680 transistor c4408 c4408 c4408 transistor transistor 2Sc4408 2sc4408 2SA1680 PDF

    transistor c4408

    Abstract: c4408 c4408 transistor 2SA1680 2SC4408
    Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		2SC4408 2SA1680 transistor c4408 c4408 c4408 transistor 2SA1680 2SC4408 PDF

    transistor c4408

    Abstract: No abstract text available
    Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		2SC4408 2SA1680 transistor c4408 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    transistor 2SA1680

    Abstract: 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR
    Text: 2SA1680 TO SH IBA 2 S A 1 680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )


    OCR Scan     		2SA1680 900mW 300ns 2SC4408. O-92MOD transistor 2SA1680 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm 5.1 M AX • Low Collector Saturation Voltage : V cE (sat) = - 0 .5 V (Max.) (IC = - 1A) •


    OCR Scan     		2SA1680 900mW 300ns 2SC4408. 961001EAA2' PDF

    A1680

    Abstract: transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680
    Text: TOSHIBA 2SA1680 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. Unit in mm 5.1 MAX • Low Collector Saturation Voltage : v CE(sat)= - 0 .5 V (Max.) (1^ = -1 A ) • High Collector Power Dissipation : Pg = 900mW (Ta = 25°C)


    OCR Scan     		2SA1680 900mW 300ns 2SC4408. 961001EAA2' A1680 transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • 5.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)


    OCR Scan     		2SA1680 900mW 300ns 2SC4408. 75MAX 961001EAA2' PDF

    A1680

    Abstract: transistor A1680 2SC4408 2SA1680
    Text: TO SH IBA 2SA1680 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 5.1 MAX. • Low Collector Saturation Voltage : V(TE(sat)“ —0.5V (Max.) (If;= —1A) • High Collector Power Dissipation : Pç; = 900mW (Ta = 25°C)


    OCR Scan     		2SA1680 900mW 2SC4408. 300ns A1680 transistor A1680 2SC4408 2SA1680 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    transistor 2SA1680

    Abstract: 2sa1680 TRANSISTOR
    Text: TOSHIBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS <;r á á ñ ñ i POWER AMPLIFIER APPLICATIONS U nit in mm POWER SWITCHING APPLICATIONS • Low Collector Saturation Voltage : V q £ (sat) “ 0.5V (Max.) • High Collector Power Dissipation


    OCR Scan     		2SC4408 900mW 500ns 2SA1680 75MAX 961001EAA2' transistor 2SA1680 2sa1680 TRANSISTOR PDF

    2SA1680

    Abstract: 2SC4408 transistor 2SA1680
    Text: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)


    OCR Scan     		2SC4408 2SA1680 900mW 500ns 75MAX. 2SC4408 transistor 2SA1680 PDF

    2SA1680

    Abstract: 2SC4408
    Text: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm POWER AMPLIFIER APPLICATIONS 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)


    OCR Scan     		2SC4408 2SA1680 900mW 500ns 75MAX 2SC4408 PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 M A X . POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : V qe (sat) = 0*5V (Max.) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)


    OCR Scan     		2SC4408 900mW 500ns 2SA1680 PDF

    2SA1680

    Abstract: 2SC4408
    Text: TOSHIBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm PO W ER AM PLIFIER APPLICATIONS 5.1 M AX. PO W ER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : V ç;e (sat) = 0.5V (Max.) High Collector Power Dissipation : Pç; = 900mW (Ta = 25°C)


    OCR Scan     		2SC4408 900mW 500ns 2SA1680 75MAX 961001EAA2' 2SC4408 PDF