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    TRANSISTOR 2SA56 Search Results

    TRANSISTOR 2SA56 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA56 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    2SA562

    Abstract: 2sa562 equivalent transistor 2SA562
    Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA562 100mA 400mA 100mA, 2SA562 2sa562 equivalent transistor 2SA562

    2SA562

    Abstract: transistor 2SA562
    Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA562 100mA 400mA 100mA, 2SA562 transistor 2SA562

    2SA562

    Abstract: No abstract text available
    Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA562 100mA 400mA 100mA, 2SA562

    2SA562

    Abstract: No abstract text available
    Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA562 100mA 400mA 100mA, 2SA562

    2SC5471

    Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
    Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN


    Original     		PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor

    2SA562TM

    Abstract: 2SC1959
    Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.


    Original     		PDF 2SA562TM 2SC1959. 2SA562TM 2SC1959

    Untitled

    Abstract: No abstract text available
    Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


    Original     		PDF 2SA562TM 2SC1959.

    2SA562TM

    Abstract: 2SC1959 Audio Power Amplifier TOSHIBA
    Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


    Original     		PDF 2SA562TM 2SC1959. 2SA562TM 2SC1959 Audio Power Amplifier TOSHIBA

    2SA562TM

    Abstract: 2SA56 2SC1959 200 watt audio amplifier ic
    Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


    Original     		PDF 2SA562TM 2SC1959. 2SA562TM 2SA56 2SC1959 200 watt audio amplifier ic

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SA562 TRANSISTOR PNP 1. EMITTER FEATURES Excellent hFE Linearlity 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 2SA562 -100mA -100mA, -10mA -20mA

    2SA562

    Abstract: 2SA562Y transistor 2SA562 2SA562-Y 2SA562-O 2SA562 Y
    Text: 2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Excellent hFE Linearity G H CLASSIFICATION OF hFE Product-Rank 2SA562-O 2SA562-Y Range


    Original     		PDF 2SA562 2SA562-O 2SA562-Y -100mA, -10mA -100mA 14-Jan-2011 -20mA 2SA562 2SA562Y transistor 2SA562 2SA562-Y 2SA562-O 2SA562 Y

    2SA562

    Abstract: To92 transistor transistor 2SA562
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TO-92 TRANSISTOR PNP FEATURES • Excellent hFE linearlity 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF 2SA562 -100A, -100mA -100mA, -10mA -20mA 2SA562 To92 transistor transistor 2SA562

    2SA562

    Abstract: 2SA562 equivalent f-30MHz transistor 2SA562
    Text: 2SA562 2SA562 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM : 0.5 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃


    Original     		PDF 2SA562 -100mA -100mA, -20mA 30MHz 2SA562 2SA562 equivalent f-30MHz transistor 2SA562

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2SA561

    Abstract: transistor 2SA561 023R
    Text: 2SA561 PNF SILICON TRANSISTOR TO-92B 2SA561 is PNP silicon, planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM R A T INGS ECB Collector-Base Voltage Ccliector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


    OCR Scan     		PDF 2SA561 O-92B 300mW IC-10mA IC-20mA 150mA 100mA -10mA' transistor 2SA561 023R

    2SA561

    Abstract: hx 36 transistor 2SA561
    Text: UKW 2SA5Ö1 FNP SILICON TRANSISTOR TO-92B 2SA561 is PNP silicon., planar transistor designed for low power general purpose amplifiers. ABSOLUTE M A X IMUM RATINGS ECB Collector-Base Voltage Coliector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


    OCR Scan     		PDF 2SA561 O-92B 300mW 150mA 100mA 3-4T0321 hx 36 transistor 2SA561

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    2SA562TM

    Abstract: 2SC1959
    Text: TOSHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • Excellent hjpg Linearity. hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA


    OCR Scan     		PDF 2SA562TM -400mA 2SC1959. 2SA562TM 2SC1959

    2SA562TM

    Abstract: 2SC1959
    Text: TO SH IBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 MAX. SWITCHING APPLICATIONS .n. Excellent hEE linearity. UJ?'E (2) ”


    OCR Scan     		PDF 2SA562TM 400mA 2SC1959. 2SA562TM 2SC1959