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    TRANSISTOR 2SB Search Results

    TRANSISTOR 2SB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


    Original     		2SB1424 2SB1424 2SB1424G-x-AB3-R OT-89 QW-R208-044 PDF

    2SB1424

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE SAT „ PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


    Original     		2SB1424 2SB1424 2SB1424L 2SB1424G 2SB1424-x-AB3-R 2SB1424L-x-AB3-R 2SB1424G-x-AB3-R OT-89 QW-R208-044 PDF

    2SB1453

    Abstract: NEC 2SB1453
    Text: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid


    Original     		2SB1453 2SB1453 NEC 2SB1453 PDF

    2SB1453

    Abstract: NEC 2SB1453
    Text: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid


    Original     		2SB1453 2SB1453 NEC 2SB1453 PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    d1541

    Abstract: 2SB1669-Z 2SB1669 2SB1669-S
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers.


    Original     		2SB1669 2SB1669 O-220AB 2SB1669-S O-262 2SB1669-Z O-220SMD d1541 2SB1669-Z 2SB1669-S PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers.


    Original     		2SB1669 2SB1669 O-220AB 2SB1669-S O-262 2SB1669-Z O-220SMD PDF

    2SB1430

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers


    Original     		2SB1430 2SB1430 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATION driven from the output of an IC. This transistor is ideal for OA and FA


    Original     		2SB1432 2SB1432 O-220 O-220) PDF

    AA3R

    Abstract: 2SB772S V/AA3R
    Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES


    Original     		2SB772S 2SB772S 2SD882S OT-223 2SB772SL 2SB772S-AA3-R 2SB772SL-AA3-R OT-223 QW-R207-012 AA3R V/AA3R PDF

    NEC RELAY

    Abstract: 2sb146 NEC RELAY nec 5 2SB1465 C11531E NEC semiconductor
    Text: PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)


    Original     		2SB1465 2SB1465 C11531E) NEC RELAY 2sb146 NEC RELAY nec 5 C11531E NEC semiconductor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.


    Original     		2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017 PDF

    2SB772S-T92-B

    Abstract: 2SB772S-T92-K 2SD882S 2SB772S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023
    Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


    Original     		2SB772S 2SB772S 2SD882S 2SB772SL 2SB772S-T92-B 2SB772SL-T92-B 2SB772S-T92-K 2SB772SL-T92-K QW-R201-023 2SD882S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023 PDF

    PW300S

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


    Original     		2SB772 2SB772 2SD882 2SB772L-x-T60-K 2SB772G-x-T60-K 2SB772L-x-T6C-K 2SB772G-x-T6C-K 2SB772L-x-TM3-T 2SB772G-x-TM3-T 2SB772L-x-TN3-R PW300S PDF

    2SB772 complement

    Abstract: 2SB772L TO-92NL
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


    Original     		2SB772 2SB772 2SD882 2SB772L-x-T60-K 2SB772L-x-T6C-K 2SB772L-x-TM3-T 2SB772L-x-TN3-R 2SB772L-x-T9N-B 2SB772L-x-T9N-K 2SB772G-x-T60-K 2SB772 complement 2SB772L TO-92NL PDF

    2SB772S

    Abstract: 2SB772SL-AB3-R 2SB772S-AB3-R 2SD882S
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 1 The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES


    Original     		2SB772S 2SB772S 2SD882S OT-89 2SB772SL 2SB772S-AB3-R 2SB772SL-AB3-R QW-R208-002 2SB772SL-AB3-R 2SD882S PDF

    transistor 1012 TO252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		2SB1260 2SB1260 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T OT-89 transistor 1012 TO252 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.


    Original     		2SB1260 2SB1260 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R OT-89 O-252 QW-R208-017 PDF

    2SB772SL

    Abstract: 2SB772S 2SB772SG 2SD882S
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


    Original     		2SB772S 2SB772S 2SD882S 2SB772SL 2SB772SG 2SB772S-x-AA3-R 2SB772S-x-AB3-R 2SB772S-x-T92-B 2SB772S-x-T92-K 2SB772SL-x-AA3-R 2SB772SL 2SB772SG 2SD882S PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


    Original     		2SB772S 2SB772S 2SD882S 2SB772SL-x-AA3-R 2SB772SG-x-AA3-R 2SB772SL-x-AB3-R 2SB772SG-x-AB3-R 2SB772SL-x-T92-B 2SB772SG-x-T92-B 2SB772SL-x-T92-K PDF

    Untitled

    Abstract: No abstract text available
    Text: QSZ3 Transistors General purpose transistor isolated transistor and diode QSZ3 A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ3 zStructure Silicon epitaxial planar transistor


    Original     		2SB1705 2SD2670 PDF

    2SB772L-T

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


    Original     		2SB772 2SB772 2SD882 O-251 2SB772L 2SB772-TM3-R 2SB772L-TM3-R O-251 QW-R213-016 2SB772L-T PDF

    2SB1412

    Abstract: 2SB1412L-TN3-F-R 2SB1412-TN3-F-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES *Excellent DC current gain characteristics *Low VCE SAT


    Original     		2SB1412 2SB1412 O-252 2SB1412L 2SB1412-TN3-F-R 2SB1412L-TN3-F-R QW-R209-021 2SB1412L-TN3-F-R 2SB1412-TN3-F-R PDF

    2SB772SL

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


    Original     		2SB772S 2SB772S 2SD882S OT-223 2SB772SL 2SB772S-x-AA3-F-R 2SB772SL-x-AA3-F-R 2SB772SL-x-AA3-F-R QW-R207-012 2SB772SL PDF