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    TRANSISTOR 2SB1386 Search Results

    TRANSISTOR 2SB1386 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SB1386 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)


    Original     		PDF 2SB1386 2SB1386 OT-89 Figure12 QW-R208-019

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)


    Original     		PDF 2SB1386 2SB1386 OT-89 QW-R208-019

    transistor smd bh

    Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
    Text: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


    Original     		PDF 2SB1386 30MHz transistor smd bh transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR  FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)  ORDERING INFORMATION Order Number 2SB1386G-x-AB3-R


    Original     		PDF 2SB1386 2SB1386G-x-AB3-R OT-89 QW-R208-019

    2SB1386

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 „ FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L


    Original     		PDF 2SB1386 OT-89 2SB1386L 2SB1386-x-AB3-F-R 2SB1386L-x-AB3-F-R QW-R208-019 2SB1386

    2SB1386

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L ORDERING INFORMATION


    Original     		PDF 2SB1386 OT-89 2SB1386L 2SB1386-x-AB3-R 2SB1386L-x-AB3-R QW-R208-019 2SB1386

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 „ FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) „ SOT-89 ORDERING INFORMATION Order Number Lead Free


    Original     		PDF 2SB1386 OT-89 2SB1386L-x-AB3-R 2SB1386G-x-AB3-R OT-89 QW-R208-019

    2SB1386U

    Abstract: ST2SB1386U
    Text: ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC


    Original     		PDF 2SB1386U OT-89 2SB1386U ST2SB1386U

    marking BHR

    Abstract: BHR SOT89 2SB1386 TRANSISTOR br bhr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR PNP FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF OT-89 2SB1386 -500mA -100mA -50mA 30MHz marking BHR BHR SOT89 2SB1386 TRANSISTOR br bhr

    d204 transistor

    Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
    Text: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /


    Original     		PDF 2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) d204 transistor D204 2SD2166 2SB1436 transistors 96-229-D204

    Untitled

    Abstract: No abstract text available
    Text: SOT-89 Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR PNP FEATURES ∙ Low collector saturation voltage,typically VCE(sat)=-0.35V ∙ Execllent current-to-gain characteristics MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units


    Original     		PDF OT-89 2SB1386 -500mA -100mA -50mA 30MHz

    transistor

    Abstract: B204 2SB1412 2sb1386 2SD2098 hFE is transistor 2SD2166 2SB1436 2SB1326 data sheet transistor PNP
    Text: Transistors Low Frequency Transistor *20V,*5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.


    Original     		PDF 2SB1386 2SB1412 2SB1326 2SB1436 2SD2098 2SD2118 2SD2097 2SD2166. 96-141-B204) transistor B204 hFE is transistor 2SD2166 2SB1436 data sheet transistor PNP

    2SD2098

    Abstract: D204 2SD2166 2SB1386 2SB1436 d204 transistor sit transistor 2SB1412 2SD2118 2SB1326
    Text: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /


    Original     		PDF 2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) D204 2SD2166 2SB1436 d204 transistor sit transistor

    2SB1412

    Abstract: 2SB1386 2SB1326 transistor 2SB1386 B204 2SB1436 2SD2166 transistors 96-141-B204 2SD2097
    Text: Transistors Low Frequency Transistor *20V,*5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.


    Original     		PDF 2SB1386 2SB1412 2SB1326 2SB1436 2SD2098 2SD2118 2SD2097 2SD2166. 96-141-B204) transistor 2SB1386 B204 2SB1436 2SD2166 transistors 96-141-B204

    2SB1386

    Abstract: 2SB1412 2SD2098 2SD2118 T100 catalog transistor
    Text: 2SB1386 / 2SB1412 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118.


    Original     		PDF 2SB1386 2SB1412 2SD2098 2SD2118. 2SB1386 SC-62 SC-63 2SB1412 2SD2118 T100 catalog transistor

    2SB1386PGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB1386PGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)


    Original     		PDF 2SB1386PGP -10mA -40mA -35mA -30mA -25mA -20mA -15mA -50mA -45mA 2SB1386PGP

    transistor p86

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB1386PPT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)


    Original     		PDF 2SB1386PPT -10mA -40mA -35mA -30mA -25mA -20mA -15mA -50mA -45mA transistor p86

    2SB1386

    Abstract: 2SB1412 2SD2098 2SD2118 T100 PW500
    Text: 2SD2098 / 2SD2118 Transistors Low VCE sat transistor (strobe flash) 2SD2098 / 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412.


    Original     		PDF 2SD2098 2SD2118 2SB1386 2SB1412. 2SD2098 SC-62 SC-63 2SB1412 2SD2118 T100 PW500

    bhr sot-89

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1386 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process TRANSISTOR PNP design, excellent power dissipation offers


    Original     		PDF OT-89 OD-123+ 060TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH bhr sot-89

    2sb132

    Abstract: 2SB1326 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100
    Text: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 zExternal dimensions (Unit : mm) 2SB1412 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 C0.5 0.65±0.1 0.75 0.55±0.1 0.4±0.1 1.5±0.1 2.3±0.2


    Original     		PDF 2SB1386 2SB1412 2SB1326 2SB1412 SC-62 SC-63 2sb132 2SB1326 2SD2097 2SD2098 2SD2118 T100

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 2SB1326 4.4±0.2 0.9 (2) 14.5±0.5 (3) 2.54 2.54 1.05 ROHM : ATV


    Original     		PDF 2SB1386 2SB1412 2SB1326 2SD2098 2SD2118 2SD2097. 2SB1386

    2SB1326

    Abstract: 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100
    Text: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 2SB1326 4.4±0.2 0.9 (2) 14.5±0.5 (3) 2.54 2.54 1.05 ROHM : ATV


    Original     		PDF 2SB1386 2SB1412 2SB1326 SC-63 65Max. SC-62 2SB1326 2SD2097 2SD2098 2SD2118 T100

    SOT89 transistor marking 5A

    Abstract: 2SB1386R marking BHR SOT89 transistor marking 4A 2SB1386 2SD2098 2SB1386-R bhr sot-89 marking BHp SOT-23
    Text: 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Low VCE sat Excellent DC current gain characteristics Complements the 2SD2098 4 1 2


    Original     		PDF 2SB1386 OT-89 2SD2098 2SB1386-P 2SB1386-Q 2SB1386-R -50mA, 30MHz 10-Dec-2010 SOT89 transistor marking 5A 2SB1386R marking BHR SOT89 transistor marking 4A 2SB1386 2SD2098 2SB1386-R bhr sot-89 marking BHp SOT-23

    2SB1386

    Abstract: MARKING PB SOT-89 bhr sot-89 SOT-89 marking 5k
    Text: 2SB1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER Features: 1 2 3 SOT-89 * Excellent DC Current Gain Characteristics * Low VCE(Sat) Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Symbol Value


    Original     		PDF 2SB1386 OT-89 28-Oct-05 OT-89 500TYP 2SB1386 MARKING PB SOT-89 bhr sot-89 SOT-89 marking 5k