Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2SB1412 Search Results

    TRANSISTOR 2SB1412 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SB1412 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    2SB1412

    Abstract: 2SB1412L-TN3-F-R 2SB1412-TN3-F-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES *Excellent DC current gain characteristics *Low VCE SAT


    Original     		PDF 2SB1412 2SB1412 O-252 2SB1412L 2SB1412-TN3-F-R 2SB1412L-TN3-F-R QW-R209-021 2SB1412L-TN3-F-R 2SB1412-TN3-F-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ)


    Original     		PDF 2SB1412 2SB1412 2SB1412L-x-TN3-T 2SB1412G-x-TN3-T 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R O-252 QW-R209-021

    2SB1412

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. „ 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ)


    Original     		PDF 2SB1412 2SB1412 O-252 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R QW-R209-021

    2SB1412

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES *Excellent DC current gain characteristics *Low VCE SAT VCE(SAT)= -0.35V (Typ)


    Original     		PDF 2SB1412 2SB1412 O-252 2SB1412L 2SB1412-x-TN3-R 2SB1412L-x-TN3-R QW-R209-021

    2SB1412

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. „ 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ)


    Original     		PDF 2SB1412 2SB1412 O-252 2SB1412L-TN3-R 2SB1412G-TN3-R QW-R209-021

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SB1412 PNP SILICON TRANSISTOR H I GH V OLT AGE SWI T CH I N G T RAN SI ST OR  DESCRI PT I ON The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEAT U RES * Excellent DC current gain characteristics * Low VCE SAT


    Original     		PDF 2SB1412 2SB1412 2SB1412L-x-TN3-T 2SB1412G-x-TN3-T 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R O-252 QW-R209-021

    d204 transistor

    Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
    Text: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /


    Original     		PDF 2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) d204 transistor D204 2SD2166 2SB1436 transistors 96-229-D204

    transistor

    Abstract: B204 2SB1412 2sb1386 2SD2098 hFE is transistor 2SD2166 2SB1436 2SB1326 data sheet transistor PNP
    Text: Transistors Low Frequency Transistor *20V,*5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.


    Original     		PDF 2SB1386 2SB1412 2SB1326 2SB1436 2SD2098 2SD2118 2SD2097 2SD2166. 96-141-B204) transistor B204 hFE is transistor 2SD2166 2SB1436 data sheet transistor PNP

    2SD2098

    Abstract: D204 2SD2166 2SB1386 2SB1436 d204 transistor sit transistor 2SB1412 2SD2118 2SB1326
    Text: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /


    Original     		PDF 2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) D204 2SD2166 2SB1436 d204 transistor sit transistor

    2SB1412

    Abstract: 2SB1386 2SB1326 transistor 2SB1386 B204 2SB1436 2SD2166 transistors 96-141-B204 2SD2097
    Text: Transistors Low Frequency Transistor *20V,*5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.


    Original     		PDF 2SB1386 2SB1412 2SB1326 2SB1436 2SD2098 2SD2118 2SD2097 2SD2166. 96-141-B204) transistor 2SB1386 B204 2SB1436 2SD2166 transistors 96-141-B204

    2SB1386

    Abstract: 2SB1412 2SD2098 2SD2118 T100 catalog transistor
    Text: 2SB1386 / 2SB1412 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118.


    Original     		PDF 2SB1386 2SB1412 2SD2098 2SD2118. 2SB1386 SC-62 SC-63 2SB1412 2SD2118 T100 catalog transistor

    2SD2118

    Abstract: 2SB1412
    Text: Low frequency transistor −20V,−5A 2SB1412 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. 2SB1412 zStructure Epitaxial planar type


    Original     		PDF 2SB1412 2SD2118. SC-63 R0039A 2SD2118 2SB1412

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value


    Original     		PDF O-251/TO-252-2L 2SB1412 O-251 O-252-2L -500mA -100mA -50mA 30MHz

    2SB1412

    Abstract: 2SD2118
    Text: Low VCE sat transistor (strobe flash) 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. 2SD2118 zStructure Epitaxial planar type


    Original     		PDF 2SD2118 2SB1412. SC-63 R0039A 2SB1412 2SD2118

    2SB1412

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF O-251/TO-252-2L 2SB1412 O-251 O-252-2L -500mA -100mA -50mA 30MHz 2SB1412

    2SB1386

    Abstract: 2SB1412 2SD2098 2SD2118 T100 PW500
    Text: 2SD2098 / 2SD2118 Transistors Low VCE sat transistor (strobe flash) 2SD2098 / 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412.


    Original     		PDF 2SD2098 2SD2118 2SB1386 2SB1412. 2SD2098 SC-62 SC-63 2SB1412 2SD2118 T100 PW500

    2sb132

    Abstract: 2SB1326 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100
    Text: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 zExternal dimensions (Unit : mm) 2SB1412 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 C0.5 0.65±0.1 0.75 0.55±0.1 0.4±0.1 1.5±0.1 2.3±0.2


    Original     		PDF 2SB1386 2SB1412 2SB1326 2SB1412 SC-62 SC-63 2sb132 2SB1326 2SD2097 2SD2098 2SD2118 T100

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 2SB1326 4.4±0.2 0.9 (2) 14.5±0.5 (3) 2.54 2.54 1.05 ROHM : ATV


    Original     		PDF 2SB1386 2SB1412 2SB1326 2SD2098 2SD2118 2SD2097. 2SB1386

    2SB1326

    Abstract: 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100
    Text: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 2SB1326 4.4±0.2 0.9 (2) 14.5±0.5 (3) 2.54 2.54 1.05 ROHM : ATV


    Original     		PDF 2SB1386 2SB1412 2SB1326 SC-63 65Max. SC-62 2SB1326 2SD2097 2SD2098 2SD2118 T100

    2SB1412

    Abstract: No abstract text available
    Text: 2SB1412 -5A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES D-Pack TO-252 Designed for general Low VCE(sat) CLASSIFICATION OF hFE Product-Rank 2SB1412-P


    Original     		PDF 2SB1412 O-252) 2SB1412-P 2SB1412-Q 2SB1412-R O-252 17-May-2013 -100mA -50mA, 30MHz 2SB1412

    2SB1412

    Abstract: 2SB1326 2SB1386 2SD2118 T100 DPACK2
    Text: 2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product Features 1 Low VCE sat). D-Pack 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 2.3 0.2 0.1 0.5 0.1 0.1 VCEO −20 V Emitter-base voltage


    Original     		PDF 2SB1412 2SD2118 2SB1386 2SB132 2SB1412) 2SB1412 2SB1326 2SB1386 2SD2118 T100 DPACK2

    Untitled

    Abstract: No abstract text available
    Text: 2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product Features 1 Low VCE sat). D-Pack 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 2.3 0.2 0.1 0.5 0.1 0.1 VCEO −20 V Emitter-base voltage


    Original     		PDF 2SB1412 2SD2118 2SB1386 2SB1412)