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    TRANSISTOR 2SC 169 Search Results

    TRANSISTOR 2SC 169 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC 169 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to


    OCR Scan     		PDF 023SbOS Q62702-F390

    2SC 3531

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5092 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure, High Gain. NF= 1.8dB, |S2 1 el2= 9.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC5092 2SC 3531

    TRANSISTOR 2SC 169

    Abstract: 2SC4081 transistor B 560 transistor 2sc 18 2sc2412k 2SC4617 R TL
    Text: 2SC2412K 2SC4081 2SC4617 Transistor, NPN Features Dimensions Units : mm • • • • available in SMT3 (SMT, SC-59), UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages 2SC2412K (SMT3) .2 9 * 0 2 18 * 0 2 package marking: 2SC2412K, 2SC4081, 2SC4617; B*-, where ★ is


    OCR Scan     		PDF 2SC2412K 2SC4081 2SC4617 SC-59) SC-70) SC-75) 2SC2412K, 2SC4081, 2SC4617; 2SA1037AK, TRANSISTOR 2SC 169 transistor B 560 transistor 2sc 18 2SC4617 R TL

    4311 mosfet transistor

    Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
    Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.


    OCR Scan     		PDF 2SC3164 VR61F1 MA1000 MA2000 4311 mosfet transistor 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072

    BFW93

    Abstract: transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60
    Text: I ESC D • 053SbOS 0 0 0 4 7 3 4 2 ■ S I E û NPN Silicon RF Broadband Transistor design SIEMENS A K T I E N ô E S E L L S C H A F D Not for new CAI BFW 93 -3 1 -1 5 BFW 9 3 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance,


    OCR Scan     		PDF 053SbOS f-31-IS Q62702-F365 Q00M73b BFW93 BFW93 transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    TRANSISTOR 2SC 635

    Abstract: No abstract text available
    Text: HITACHI 2SC4926-Silicon NPN Bipolar Transistor Application MPAK-4 VHF & UHF wide band amplifire Features 2 • High gain bandwidth product 3 f-p = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz t, 4 1. Collector


    OCR Scan     		PDF 2SC4926 breakd-47 TRANSISTOR 2SC 635

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


    OCR Scan     		PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2 S C 4 5 3 6 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic


    OCR Scan     		PDF 2SC4536

    transistor A1515

    Abstract: Transistor 2SA 2SB 2SC 2SD d2172 a1515 transistor transistor D1292 h7195 rkm 34 transistor C1741A IC TB 1238 AN transistor b1184
    Text: Explanations • Standard Products, Semi-standard Products, Custom Products To make it easier for the customer to select the type of product best suited to his needs, we offer transistors, diodes, light-emitting diodes sensors, lasers diodes, and resistors in three types: 1 standard, (2) semi-standard, and


    OCR Scan     		PDF MCR01 transistor A1515 Transistor 2SA 2SB 2SC 2SD d2172 a1515 transistor transistor D1292 h7195 rkm 34 transistor C1741A IC TB 1238 AN transistor b1184

    NE24600

    Abstract: NE24620 2SC2952 2SC2953 NE24615
    Text: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :


    OCR Scan     		PDF tj4S74m 00G237S NE24600 NE24615 NE24620 NE24620 NE246 preve35 2SC2952 2SC2953

    TRANSISTOR BFW 11

    Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
    Text: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use


    OCR Scan     		PDF 053SbOS Q62702-F365 a23SbQS 00DM73b TRANSISTOR BFW 11 bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83

    2SA561

    Abstract: 2SC734 2SA 561 transistor transistor 2SC734 transistor 2SA561 2SC734 Y JSW 70 Produced by Perfect Crystal Device Technology TRANSISTOR y9
    Text: 2s a 561 ^ u j y p N P x ^ 5> ^ p m ^ y ^ x s > p c T m SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS o O D riv e r S ta g e A m p lif ie r A p p lic a tio n s •  W - Ë E - r - t ; V c b o = - 50V • « IÎD * Œ x > 5 ^ ; Vc k ( e a t ) = 2SC734 t


    OCR Scan     		PDF 2sa561 2SC73tiay/ij 2SC734 S-150 --50flA 2SA561 2SC734 2SA 561 transistor transistor 2SC734 transistor 2SA561 2SC734 Y JSW 70 Produced by Perfect Crystal Device Technology TRANSISTOR y9

    transistor marking YD ghz

    Abstract: No abstract text available
    Text: 2SC4926-Silicon NPN Bipolar Transistor Application MPAK-4 V H F & U H F wide band amplifire Features 2 • H igh gain bandwidth product f-p = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 M H z 3 4PI, 4 1. 2.


    OCR Scan     		PDF 2SC4926------Silicon transistor marking YD ghz

    transistor 2sc 548

    Abstract: No abstract text available
    Text: HITACHI 2SC4993 -Silicon NPN Bipolar Transistor Application MPAK-4 VHF & UHF wide band amplifier Features • High gain bandwidth product fx = 10.5 GHz typ * High gain, low noise figure PG = 16.5 dB typ, NF = 1.2 dB typ at f = 900 MHz 1. Collector 2. Emitter


    OCR Scan     		PDF 2SC4993 transistor 2sc 548

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K

    Untitled

    Abstract: No abstract text available
    Text: H ITACHI 2SC4874-Silicon NPN Bipolar Transistor Application TO-92 VHF & UHF wide band amplifire Features • High gain bandwidth product fx = 5.8 GHz typ • High gain, low noise figure PG = 10.0 dB typ, NF = 1.8 dB typ at f = 900 MHz I 1. Base


    OCR Scan     		PDF 2SC4874--------------Silicon

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4807-Silicon NPN Bipolar Transistor Application UPAK VHF & UHF wide band amplifier Features 1 • High gain bandwidth product f-j- = 4.4 GHz typ • High output power 1 dB Power compression point, Pep = 24 dBm typ at VCE = 5V , I c = 100 mA , f = 900 MHz


    OCR Scan     		PDF 2SC4807-----Silicon

    2SC1253

    Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for


    OCR Scan     		PDF MS7414 NE74000 NE74014 NE74020 NE740 E90115 NE74014 2SC12579 2SC1253 E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733

    transistor marking YD ghz

    Abstract: 2SC4995 z 0607 ma yd 1208 transistor m 4995
    Text: HITACHI 2SC4995-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire C M P A K -4 Features • High gain bandwidth product f j = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 1. 2. 3. 4.


    OCR Scan     		PDF 2SC4995-----Silicon cut369 transistor marking YD ghz 2SC4995 z 0607 ma yd 1208 transistor m 4995

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


    OCR Scan     		PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram