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    TRANSISTOR 2SC1627 Search Results

    TRANSISTOR 2SC1627 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC1627 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5471

    Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
    Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN


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    PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor

    2SA817A

    Abstract: 2SA817A transistor 2SC1627A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD 2SA817A Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92MOD FEATURES 1. EMITTER 2. COLLECTOR . Complementary to 2SC1627A. . Driver Stage Application of 30 to 35 Watts Amplifiers. 3. BASE 123


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    PDF O-92MOD 2SA817A 2SC1627A. -100A, -50mA -200mA -20mA -10mA 2SA817A 2SA817A transistor 2SC1627A

    2sa817

    Abstract: No abstract text available
    Text: 2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA817 Audio Frequency Amplifier Applications Unit: mm • Complementary to 2SC1627. • Suitable for driver of 20~25 watts audio amplifiers. Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SA817 2SC1627. SC-43 2sa817

    2SA817

    Abstract: 2SC1627
    Text: 2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA817 Audio Frequency Amplifier Applications Unit: mm • Complementary to 2SC1627. • Suitable for driver of 20~25 watts audio amplifiers. Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SA817 2SC1627. 2SA817 2SC1627

    2SA817

    Abstract: 2SC1627
    Text: 2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA817 Audio Frequency Amplifier Applications Unit: mm • Complementary to 2SC1627. • Suitable for driver of 20~25 watts audio amplifiers. Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SA817 2SC1627. 2SA817 2SC1627

    2SA817

    Abstract: 2SC1627
    Text: 2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA817 Audio Frequency Amplifier Applications Unit: mm • Complementary to 2SC1627. · Suitable for driver of 20~25 watts audio amplifiers. Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SA817 2SC1627. SC-43 2SA817 2SC1627

    2SC1627

    Abstract: 2SA817
    Text: 2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1627 Driver Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817 · Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta = 25°C)


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    PDF 2SC1627 2SA817 SC-43 2SC1627 2SA817

    2SC1627

    Abstract: 2SA817
    Text: 2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1627 Driver Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817 • Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta = 25°C)


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    PDF 2SC1627 2SA817 SC-43 2SC1627 2SA817

    A817A transistor

    Abstract: a817a 2SA817A transistor a817a A817 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC1627A
    Text: 2SA817A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers. Maximum Ratings (Ta = 25°C)


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    PDF 2SA817A 2SC1627A. O-92MOD A817A transistor a817a 2SA817A transistor a817a A817 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC1627A

    c1627a transistor

    Abstract: c1627a transistor c1627a c1627 2SC1627A 2SA817A
    Text: 2SC1627A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC1627A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817A. • Driver-stage applications for 30- to 35-watt amplifiers. Maximum Ratings (Ta = 25°C)


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    PDF 2SC1627A 2SA817A. 35-watt O-92MOD c1627a transistor c1627a transistor c1627a c1627 2SC1627A 2SA817A

    A817A transistor

    Abstract: a817a 2SA817A 2SC1627A 2SA817A transistor
    Text: 2SA817A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SA817A 2SC1627A. O-92MOD A817A transistor a817a 2SA817A 2SC1627A 2SA817A transistor

    2SC1627

    Abstract: 2SA817
    Text: 2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1627 Driver Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817 • Driver stage application of 20 to 25 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC1627 2SA817 SC-43 2SC1627 2SA817

    A817A transistor

    Abstract: a817a A817 2SA817A 2SC1627A 2SA817A transistor
    Text: 2SA817A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers. Unit: mm Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SA817A 2SC1627A. O-92MOD A817A transistor a817a A817 2SA817A 2SC1627A 2SA817A transistor

    2SC1627A

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1627A TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.8 W (Tamb=25℃) 3. BASE Collector current ICM: 0.4 A Collector-base voltage


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    PDF O-92MOD 2SC1627A O-92MOD 200mA 2SC1627A

    transistor c1627a

    Abstract: c1627a transistor c1627a 2SA817A 2SC1627A
    Text: 2SC1627A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC1627A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817A. • Driver-stage applications for 30- to 35-watt amplifiers. Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC1627A 2SA817A. 35-watt O-92MOD transistor c1627a c1627a transistor c1627a 2SA817A 2SC1627A

    2SC1627

    Abstract: 2SA817
    Text: 2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1627 Driver Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817 • Driver stage application of 20 to 25 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC1627 2SA817 SC-43 2SC1627 2SA817

    2SC1627

    Abstract: Transistor 2SC1627 2SA817
    Text: 2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1627 Driver Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817 • Driver stage application of 20 to 25 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC1627 2SA817 SC-43 2SC1627 Transistor 2SC1627 2SA817

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SC1627A

    Abstract: No abstract text available
    Text: TOSHIBA 2SC1627A 2SC1627A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX VOLTAGE AMPLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 Watts Amplifiers.


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    PDF 2SC1627A 2SA817A. 75MAX. T0-92M0D 2SC1627A

    Untitled

    Abstract: No abstract text available
    Text: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.


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    PDF 2SA817A 2SC1627A. 75MAX

    2SA817A

    Abstract: 2SC1627A
    Text: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • • 5.1 MAX. Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.


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    PDF 2SA817A 2SC1627A. O-92MOD 25truments, 2SA817A 2SC1627A

    2SC1627A

    Abstract: 2SA817A 2SA817A transistor
    Text: TOSHIBA 2SC1627A 2SC1627A TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX. VOLTAGE AMPLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 Watts Amplifiers.


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    PDF 2SC1627A 2SA817A. 75MAX O-92MOD 2SC1627A 2SA817A 2SA817A transistor

    2SC1627A

    Abstract: 2SA817A
    Text: 2SC1627A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1627A Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 5.1 MAX. VOLTAGE AMPLIFIER APPLICATIONS • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 Watts Amplifiers.


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    PDF 2SC1627A 2SA817A. 75max. O-92MOD 2SC1627A 2SA817A

    2SA817A

    Abstract: 2SC1627A
    Text: 2SA817A TO SH IBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.


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    PDF 2SA817A 2SC1627A. O-92MOD 2SA817A 2SC1627A