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    TRANSISTOR 2SC1972 Search Results

    TRANSISTOR 2SC1972 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC1972 Datasheets Context Search

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    transistor 2sc1972

    Abstract: 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on VHF band mobile radio applications. Dimensions in mm 03.6 ± 0.2


    OCR Scan     		2SC1972 2SC1972 175MHz O-220 175MHz. transistor 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf PDF

    2SC1972

    Abstract: 2SC1972 equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAW ING 2 S C 1 9 7 2 is a silicon N P N epitaxial planar type transistor de­ signed for RF power amplifiers on V H F Dimensions i band m obile radio applications. 03.6 ± 0.2


    OCR Scan     		2SC1972 2SC1972 2SC1972 equivalent PDF