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    TRANSISTOR 2SC2336A Search Results

    TRANSISTOR 2SC2336A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC2336A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR 2SC2336A

    Abstract: 2SA1006A 2SC2336A TRANSISTOR 2SA1006A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006A DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336A APPLICATIONS


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    PDF 2SA1006A -200V 2SC2336A -500mA; -50mA -150V; -150mA -100mA TRANSISTOR 2SC2336A 2SA1006A 2SC2336A TRANSISTOR 2SA1006A

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


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    PDF PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


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    PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    transistor NEC 2SK2500

    Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24

    2SC2336

    Abstract: 2sa1006 2SC2336A TRANSISTOR 2SC2336A transistor 2SA C2336B
    Text: SEC SILICON POWER TRANSISTORS ELECTRON DEVICE 2SA1006,2SA1006A,2SA1006B 2SC2336,2SC2336A,2SC2336B AUDIO FREQUENCY POWER AMPLIFIER PNP/NPN SILICON EPITAXIAL TRANSISTOR BUILT IN EMITTER BALLAST RESISTORS D ESCRIPTIO N The 2SA1006, 2S A 1006A , 2SA1006B/2SC2336, 2SC2336A and 2SC2336B are silicon epitaxial transistors suited fo r use as


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    PDF 2SA1006 2SA1006A 2SA1006B 2SC2336 2SC2336A 2SC2336B 2SA1006, 2SA1006B/2SC2336, 2SC2336B TRANSISTOR 2SC2336A transistor 2SA C2336B

    2sc2720

    Abstract: 2SA1152 2SA603 2SC2719 S0233 NTC2335 2SC1280A 2SC2336 2SA1151 2SA100B
    Text: 2SA1006,1006A.1006B/2SC2336,2336A,2336B 2SA1006,1006A,1006B/2SC2336,2336A,2336B P N P /N P N PNP/NPN Silicon Epitaxial Transistor EBT X ^ + '> 7 ; H ^ Audio Frequency Power Amplifier High Frequency Power Amplifier i& m ijz m tim im , æ m i& w t im m m 0 ^ *1 5 0 -5 0 0


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    PDF 2SA1006 1006B/2SC2336 2336B 2SA1006A 2SA1006B 2SC2336 2sc2720 2SA1152 2SA603 2SC2719 S0233 NTC2335 2SC1280A 2SA1151 2SA100B

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


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    PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362