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    TRANSISTOR 2SC5720 Search Results

    TRANSISTOR 2SC5720 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC5720 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5471

    Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
    Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN


    Original     		PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor

    transistor 2sc5720

    Abstract: No abstract text available
    Text: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE sat (1) = 0.25 V (Max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 2SC5720 transistor 2sc5720

    2SC5720

    Abstract: 2sC5720 transistor transistor 2sc5720
    Text: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: Unit: mm VCE sat (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 2SC5720 2SC5720 2sC5720 transistor transistor 2sc5720

    Untitled

    Abstract: No abstract text available
    Text: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: Unit: mm VCE sat (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5720

    transistor 2sc5720

    Abstract: 2Sc5720 2sC5720 transistor
    Text: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: Unit: mm VCE sat (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 2SC5720 transistor 2sc5720 2Sc5720 2sC5720 transistor

    2sC5720 transistor

    Abstract: transistor 2sc5720 2SC5720
    Text: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: Unit: mm VCE sat (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5720 2sC5720 transistor transistor 2sc5720 2SC5720