Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2SD2241 Search Results

    TRANSISTOR 2SD2241 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD2241 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    D2241

    Abstract: TRANSISTOR D2241 2SB1481 2SD2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD2241 2SB1481 D2241 TRANSISTOR D2241 2SB1481 2SD2241

    D2241

    Abstract: TRANSISTOR D2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD2241 2SB1481 SC-67 2-10R1A D2241 TRANSISTOR D2241

    D2241

    Abstract: TRANSISTOR D2241 2SD2241 2SB1481
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SD2241 2SB1481 D2241 TRANSISTOR D2241 2SD2241 2SB1481

    TRANSISTOR D2241

    Abstract: D2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SD2241 2SB1481 TRANSISTOR D2241 D2241

    B1481

    Abstract: 2SB1481 2SD2241
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 B1481 2SB1481 2SD2241

    B1481

    Abstract: 2SB1481 2SD2241 2SB148
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 -55oducts B1481 2SB1481 2SD2241 2SB148

    B14-81

    Abstract: No abstract text available
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 SC-67 2-10R1A B14-81

    Untitled

    Abstract: No abstract text available
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241

    2SB1481

    Abstract: No abstract text available
    Text: IziieuiJ ^£.mi-(2onductoi ^-Pioducti, Una. Ls TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1481 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)cEo=-100V(Min)


    Original     		PDF 2SB1481 -100V 2SD2241 O-220F -10rnA; -100V; 2SB1481

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2sd2241

    Abstract: 2SB1481
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -6mA)


    Original     		PDF -100V 2SD2241 -100V; 2sd2241 2SB1481

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


    Original     		PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    2SD2241

    Abstract: 2SB1481 S5 3000
    Text: TOSHIBA 2SD2241 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 Unit in mm SW ITCHING APPLICATIONS • High DC Current Gain • r : hp^ —2000 Min. <v> o Low Saturation Voltage : V q £ (sat) = l-5V (Max.) cn CO O Complementary to 2SB1481 1.1 1.1


    OCR Scan     		PDF 2SD2241 2SB1481 100//S* 2SD2241 2SB1481 S5 3000

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • High DC Current Gain : hpE = 2000 Min. (VCE = -2 V , IC= -1.5A ) Low Saturation Voltage : Vc e (sat)~ —1-5V (Max.) (Iq = —3A) Complementary to 2SD2241


    OCR Scan     		PDF 2SB1481 2SD2241

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SD2241 2SD2241 TO SHIBA TRANSISTOR SW ITCHING APPLICATIONS • • • SILICON NPN EPITAXIAL TYPE Unit in mm ^ 3.2 ± 0.2 1 0 1 0.3 High DC Current Gain : hpg = 2000 Min. Low Saturation Voltage : V q e = l-5V (Max.) Complementary to 2SB1481


    OCR Scan     		PDF 2SD2241 2SB1481

    transistor 2sd2241

    Abstract: 2SB1481 2SD2241
    Text: TO SH IBA 2SD2241 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 SWITCHING APPLICATIONS U n it in mm 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r • • H igh DC Current Gain : hpE = 2000 Min. CO Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) cn ro o


    OCR Scan     		PDF 2SD2241 2SB1481 transistor 2sd2241 2SB1481 2SD2241

    2SB1481

    Abstract: 2SD2241 equivalent of 2sd2241
    Text: TO SH IBA 2SD2241 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 SWITCHING APPLICATIONS U n it in mm 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r • H igh DC Current Gain : hpE = 2000 Min. • Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) C*) cn CO


    OCR Scan     		PDF 2SD2241 2SB1481 2SB1481 2SD2241 equivalent of 2sd2241

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 14 81 SWITCHING APPLICATIONS U nit in mm High DC Current Gain : hFE = 2000 Min. (VCe = - 2 V , IC = - 1 .5 A ) • T.r»w S n tn r n fin n Vnltacri* * W't-n - • Complementary to 2SD2241


    OCR Scan     		PDF 2SB1481 2SD2241

    2SB1481

    Abstract: 2SD2241
    Text: TO SH IBA 2SB1481 TOSHIBA TRANSISTOR 2 S B 1 481 SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE Unit in mm High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , In = -1 .5 A ) Low Saturation Voltage : V £E (sat)“ — (Max.) (I0 = —3A)


    OCR Scan     		PDF 2SB1481 2SD2241 2SB1481

    2SB1481

    Abstract: 2SD2241 T32001
    Text: TO SH IBA 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , In = -1 .5 A ) Low Saturation Voltage : V £E (sat)“ — (Max.) (I0 = —3A)


    OCR Scan     		PDF 2SB1481 2SD2241 2SB1481 T32001

    2SB1481

    Abstract: 2SD2241
    Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -1.5A ) Low Saturation Voltage : Vq^ (sat)“ —1.5V (Max.) (I0 = —3A)


    OCR Scan     		PDF 2SB1481 2SD2241 2SB1481

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346