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    TRANSISTOR 2SD638 Search Results

    TRANSISTOR 2SD638 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD638 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sb644

    Abstract: No abstract text available
    Text: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Parameter 2SD0638 base voltage 2SD0639 Collector to 2SD0638 Ratings


    Original     		PDF 2SD0638, 2SD0639 2SD638, 2SD639) 2SB0643 2SB643) 2SB0644 2SB644) 2SD0638 2SD0639 2sb644

    2SB0643

    Abstract: 2SB0644 2SB643 2SB644 2SD0638 2SD0639 2SD638 2SD639
    Text: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Parameter 2SD0638 base voltage 2SD0639 Collector to 2SD0638 Ratings


    Original     		PDF 2SD0638, 2SD0639 2SD638, 2SD639) 2SB0643 2SB643) 2SB0644 2SB644) 2SD0638 2SB0643 2SB0644 2SB643 2SB644 2SD0638 2SD0639 2SD638 2SD639

    2sb644

    Abstract: No abstract text available
    Text: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Parameter 2SD0638 base voltage 2SD0639 Collector to 2SD0638 VEBO


    Original     		PDF 2SD0638, 2SD0639 2SD638, 2SD639) 2SB0643 2SB643) 2SB0644 2SB644) 2SD0638 2SD0639 2sb644

    2sb644

    Abstract: No abstract text available
    Text: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Symbol Collector to 2SD0638 base voltage 2SD0639 Collector to 2SD0638


    Original     		PDF 2SD0638, 2SD0639 2SD638, 2SD639) 2SB0643 2SB643) 2SB0644 2SB644) 2SD0638 2SD0639 2sb644

    2SB644

    Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
    Text: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 6.9±0.1 Parameter Symbol Collector to 2SD0638 base voltage 2SD0639 Collector to


    Original     		PDF 2SD0638, 2SD0639 2SD638, 2SD639) 2SB0643 2SB643) 2SB0644 2SB644) 2SD0638 2SB644 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639

    2SB644

    Abstract: 2SD0638 2SB0643 2SB0644 2SB643 2SD0639 2SD638 2SD639 transistor 2sb643 transistor 2sd638
    Text: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) Unit: mm 6.9±0.1 Symbol Collector to 2SB0643 base voltage 2SB0644 Collector to 2SB0643


    Original     		PDF 2SB0643, 2SB0644 2SB643, 2SB644) 2SD0638 2SD638) 2SD0639 2SD639) 2SB0643 2SB644 2SD0638 2SB0643 2SB0644 2SB643 2SD0639 2SD638 2SD639 transistor 2sb643 transistor 2sd638

    2SB644

    Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
    Text: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) Unit: mm 2.5±0.1 Parameter Symbol Collector to 2SB0643 base voltage 2SB0644 Collector to


    Original     		PDF 2SB0643, 2SB0644 2SB643, 2SB644) 2SD0638 2SD638) 2SD0639 2SD639) 2SB0643 2SB644 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639

    2SB644

    Abstract: transistor 2sb643 2SB643 2sd638 2SD639 2sb643 complementary
    Text: Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 Unit: mm 6.9±0.1 Symbol Collector to 2SB643 base voltage 2SB644 Collector to 2SB643 Ratings –30 VCBO –60 VCEO emitter voltage 2SB644


    Original     		PDF 2SB643, 2SB644 2SD638 2SD639 2SB643 2SB644 transistor 2sb643 2SB643 2SD639 2sb643 complementary

    transistor 2sd638

    Abstract: 2Sd638 2SD639 32-Bit Parallel-IN Serial-OUT Shift Register 2SB643 2SB644
    Text: Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 Unit: mm 6.9±0.1 Parameter Symbol Collector to 2SD638 base voltage 2SD639 Collector to 2SD638 Ratings 30 VCBO 25 VEBO 7 V


    Original     		PDF 2SD638, 2SD639 2SB643 2SB644 2SD638 transistor 2sd638 2Sd638 2SD639 32-Bit Parallel-IN Serial-OUT Shift Register 2SB644

    2SB644

    Abstract: transistor 2sd638 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639 transistor 2sb643
    Text: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) M Di ain sc te on na tin nc ue e/ d Unit: mm 2.5±0.1 Parameter Symbol Collector to


    Original     		PDF 2SD0638, 2SD0639 2SD638, 2SD639) 2SB0643 2SB643) 2SB0644 2SB644) 2SD0638 2SB644 transistor 2sd638 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639 transistor 2sb643

    2SB644

    Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
    Text: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planar type Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 • Absolute Maximum Ratings Ta = 25°C 2SB0643 Collector to emitter voltage 2SB0643 Symbol Rating Unit VCBO −30 V −60


    Original     		PDF 2SB0643, 2SB0644 2SB643, 2SB644) 2SB0643 2SB644 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SD675

    Abstract: 2sd676 2SD674 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SD669 7c-25-C) 2SD673 2SD674 2SD675 2SD676 2SD675 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


    OCR Scan     		PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan     		PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V