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    TRANSISTOR 2SK117 Search Results

    TRANSISTOR 2SK117 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1170 Renesas Electronics Corporation Nch Single Power Mosfet 500V 20A 270Mohm To-3P Visit Renesas Electronics Corporation
    2SK1170-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 20A 270Mohm To-3P Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SK117 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    2SK117

    Abstract: 2SK117 gr TOSHIBA 2SK117 2sk1173 TRANSISTOR 2SK117
    Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Yfs| = 15 mS typ. (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK117 SC-43 2SK117 2SK117 gr TOSHIBA 2SK117 2sk1173 TRANSISTOR 2SK117

    2sk117

    Abstract: TOSHIBA 2SK117 2SK117 gr
    Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Yfs| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK117 SC-43 2sk117 TOSHIBA 2SK117 2SK117 gr

    2sk117

    Abstract: 2SK1173 2SK117 gr TOSHIBA 2SK117
    Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Yfs| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK117 2sk117 2SK1173 2SK117 gr TOSHIBA 2SK117

    2SK117

    Abstract: 2SK117 gr TOSHIBA 2SK117
    Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Yfs| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK117 2SK117 2SK117 gr TOSHIBA 2SK117

    230 AC to 5V dc smps

    Abstract: IRFP460 SWITCHING FREQUENCY IRFP460 equivalent smps 450W irfp460 mosfet SCHEMATIC POWER SUPPLY WITH IGBTS IRFP460 full bridge make full-bridge SMPS dale RH-50 8508 zener
    Text: SMPS IGBT Outperforms MOSFETs in Various SMPS Applications TM Application Note August 2000 AN9884 Authors: Alexander H. Craig and Sampat Shekhawat of the IGBT. The super junction transistor device failed during the reverse recovery of its body diode. To slow down


    Original     		PDF AN9884 200ns 230 AC to 5V dc smps IRFP460 SWITCHING FREQUENCY IRFP460 equivalent smps 450W irfp460 mosfet SCHEMATIC POWER SUPPLY WITH IGBTS IRFP460 full bridge make full-bridge SMPS dale RH-50 8508 zener

    smps 450W

    Abstract: IRFP460 full bridge dc-dc converter with irfp460 8508 zener IRFP460 application dale RH-50 full bridge mosfet smps IRFP460 equivalent SCHEMATIC POWER SUPPLY WITH IGBTS schematic SMPS 12V
    Text: SMPS IGBT Outperforms MOSFETs in Various SMPS Applications TM Application Note September 2000 AN9884.1 Authors: Alexander H. Craig and Sampat Shekhawat of the IGBT. The super junction transistor device failed during the reverse recovery of its body diode. To slow down


    Original     		PDF AN9884 200ns smps 450W IRFP460 full bridge dc-dc converter with irfp460 8508 zener IRFP460 application dale RH-50 full bridge mosfet smps IRFP460 equivalent SCHEMATIC POWER SUPPLY WITH IGBTS schematic SMPS 12V

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    CTX12S

    Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
    Text: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102


    Original     		PDF 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 CTX12S SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    SE135N

    Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
    Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE135N SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N

    em 234 stepper

    Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
    Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		PDF O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090

    2SC5586 equivalent

    Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements


    Original     		PDF TM1641S-L TM1661B-L TM1661P-L TM1661S-L TM2541B-L TM2561B-L TM341M-L TM341S-L TM341S-R TM361M-L 2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent

    SE110N

    Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
    Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)


    OCR Scan     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE110N A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode

    TOSHIBA 2SK117

    Abstract: 2sk117
    Text: TOSHIBA 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS U nit in mm 5.1 MAX. |Yfs| = 15mS Typ. High |Yfs| (VDS = 10V, VGS = 0) 0.45 TTicrVi "RrpalrHnwn Vnltacrp W • Low Noise NF = 1.0dB (Typ.) (VDS = 10V,


    OCR Scan     		PDF 2SK117 961001EAA2' TOSHIBA 2SK117 2sk117

    2SK117

    Abstract: TOSHIBA 2SK117 TRANSISTOR 2SK117
    Text: 2SK117 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS 5.1 MAX. : |Yfs| = 15mS Typ. • High |Yfs| • • High Breakdown Voltage • VGDS= - 50V : NF = l.OdB (Typ.) (VDg = 10V,


    OCR Scan     		PDF 2SK117 2SK117 TOSHIBA 2SK117 TRANSISTOR 2SK117

    2SK117

    Abstract: TOSHIBA 2SK117 TRANSISTOR 2SK117
    Text: 2SK117 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 LOW NOISE AUDIO AMPLIFIER APPLICATIONS U n it in mm 5.1 MAX. • H igh |Yfc| : |Yfs | = 15mS Typ. (VDS = 10V, V g s = 0) • H igh Breakdown Voltage • VGDS= - 50V


    OCR Scan     		PDF 2SK117 2SK117 TOSHIBA 2SK117 TRANSISTOR 2SK117

    Untitled

    Abstract: No abstract text available
    Text: TO S H IBA 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS . 5.1 MAX. : |Yfs| = 15mS Typ. (VDS = 10V, VGS = 0) • High |Yfs| • • High Breakdown Voltage : V g d S = - 50V


    OCR Scan     		PDF 2SK117

    2SK117

    Abstract: 2SK117 gr
    Text: T O S H IB A 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 LOW NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm . 5.1 MAX. • High |Yfe| : IYfs| = 15mS Typ. (VDS = 10V, v Gs = o) • High Breakdown Voltage 0-45 : V g d S = - 50V


    OCR Scan     		PDF 2SK117 2SK117 2SK117 gr