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    TRANSISTOR 2SK2718 Search Results

    TRANSISTOR 2SK2718 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SK2718 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor k2718

    Abstract: K2718 transistor 2sk2718 2SK2718 2SK271
    Text: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


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    2SK2718 transistor k2718 K2718 transistor 2sk2718 2SK2718 2SK271 PDF

    k2718

    Abstract: transistor k2718 2SK2718 634 transistor
    Text: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


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    2SK2718 k2718 transistor k2718 2SK2718 634 transistor PDF

    k2718

    Abstract: transistor k2718
    Text: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


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    2SK2718 k2718 transistor k2718 PDF

    2SK2718

    Abstract: transistor 2sk2718
    Text: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


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    2SK2718 2SK2718 transistor 2sk2718 PDF

    k2718

    Abstract: transistor k2718 transistor 2sk2718 2sk2718
    Text: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


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    2SK2718 k2718 transistor k2718 transistor 2sk2718 2sk2718 PDF

    transistor 2sk2718

    Abstract: 2SK2718
    Text: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.)


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    2SK2718 transistor 2sk2718 2SK2718 PDF

    K2543

    Abstract: MOSFET TOSHIBA 2SK MOSFET VDS 220V TO-220 equivalent 2sk2698 mosfet 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
    Text: Avalanche Withstand Capability PRODUCT GUIDE Avalanche Withstand Capability Avalanc Power MOSFETs are used as high-speed switching devices in applications such as switching power supplies and DC-DC converters, where they contribute to miniaturization and lighter weight. The higher the operating frequency,


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    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


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    SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 PDF

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


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    p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


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    SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52 PDF

    2SK2718

    Abstract: 634 transistor
    Text: TO SH IBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source UN Resistance : Rd S(ON) = 5.612 (Typ.)


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    2SK2718 2SK2718 634 transistor PDF

    SS100 TRANSISTOR

    Abstract: 2SK2718
    Text: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance : R ßS (0 N )“ 5 .6 0 (Typ.)


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    2SK2718 SS-100/ SS100 TRANSISTOR 2SK2718 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2718 TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 0 Í0 .3 : R d S ( 0N) = 5-6H (Typ.)


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    2SK2718 100//A 20kil) PDF

    2SK2718

    Abstract: transistor 2sk2718
    Text: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) • Low Leakage C urrent : lD gg = 100,6iA(Max.) (V]3 g = 720V)


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    2SK2718 100//A 2SK2718 transistor 2sk2718 PDF

    2SK2718(Q)

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K SILICON N CHANNEL MOS TYPE tt-MOSIII 2 7 1 8 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3


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    2SK2718 --25H 2SK2718(Q) PDF