Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2X W Search Results

    TRANSISTOR 2X W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2X W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LMBT4401WT1G

    Abstract: 1N916 LMBT4401LT1 LMBT4401LT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel LMBT4401WT3G 2X 10000/Tape & Reel


    Original     		PDF LMBT4401WT1G 3000/Tape LMBT4401WT3G 10000/Tape SC-70 LMBT4401WT1G 1N916 LMBT4401LT1 LMBT4401LT1G

    LMBT4401LT1G

    Abstract: 1N916 LMBT4401LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401LT1G 2X 3000/Tape & Reel LMBT4401LT3G 2X 10000/Tape & Reel


    Original     		PDF LMBT4401LT1G 3000/Tape LMBT4401LT3G 10000/Tape OT-23 LMBT4401LT1G 1N916 LMBT4401LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel LMBT4401WT3G 2X 10000/Tape & Reel


    Original     		PDF LMBT4401WT1G 3000/Tape LMBT4401WT3G 10000/Tape SC-70

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT4401LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401LT1G 2X 3000/Tape & Reel LMBT4401LT3G 2X 10000/Tape & Reel


    Original     		PDF LMBT4401LT1G 3000/Tape LMBT4401LT3G 10000/Tape

    2X transistor sot 353

    Abstract: SOT-353 Silicon NPN Epitaxial Planar Type SRC1207 SUR521H marking code GI
    Text: SUR521H Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1207 chips in SOT-353 package • With built-in bias resistors Ordering Information Type NO. Marking SUR521H Package Code 2X SOT-353 Outline Dimensions


    Original     		PDF SUR521H SRC1207 OT-353 OT-353 KST-5007-000 2X transistor sot 353 SOT-353 Silicon NPN Epitaxial Planar Type SUR521H marking code GI

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz

    MMBT4401

    Abstract: marking 2X SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz marking 2X SOT23

    SMD transistor 2x sot 23

    Abstract: CMBT4401 TRANSISTOR SMD 2X K
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT4401 C-120 SMD transistor 2x sot 23 CMBT4401 TRANSISTOR SMD 2X K

    SMD transistor 2x sot 23

    Abstract: TRANSISTOR SMD 2X K CMBT4401
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT4401 C-120 SMD transistor 2x sot 23 TRANSISTOR SMD 2X K CMBT4401

    2SC2904

    Abstract: 2sc2904 TRANSISTOR transistor 835 H22A
    Text: 2SC2904 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz


    Original     		PDF 2SC2904 2SC2904 2sc2904 TRANSISTOR transistor 835 H22A

    mmbt4401

    Abstract: marking 2x sot23
    Text: MMBT4401 SOT-23 Transistor NPN 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features — Switching transistor MARKING: MMBT4401=2X MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage


    Original     		PDF MMBT4401 OT-23 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz marking 2x sot23

    SMD transistor 2x sot 23

    Abstract: CMBT4401
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X


    Original     		PDF OT-23 CMBT4401 C-120 SMD transistor 2x sot 23 CMBT4401

    BLV25

    Abstract: No abstract text available
    Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 1 2 2x Ø N FULL R D FEATURES: 3 • 28 V operation • PG = 10 dB at 175 W/108 MHz


    Original     		PDF BLV25 BLV25

    ASI10531

    Abstract: ASI2223-4
    Text: ASI2223-4 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI 2223-4 is a common Base transistor capable of providing 4 W, ClassC output power over the band 2220-2300 MHz. A C .025 x 45° 4x .062 x 45° 2X B B ØD C E F E G FEATURES:


    Original     		PDF ASI2223-4 ASI10531 ASI2223-4

    BLV25

    Abstract: No abstract text available
    Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 2 1 2x Ø N FU LL R D FEATURES: 4 3 • 28 V operation • PG = 1.0 dB at 175 W/108 MHz


    Original     		PDF BLV25 BLV25

    sd1441

    Abstract: SD-1441
    Text: SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG A C FEATURES: 1 3 2x Ø N FULL R • 175 MHz 12.5 V


    Original     		PDF SD1441 SD1441 SD-1441

    2SC2782

    Abstract: NPN 2SC2782 transistor 2sc2782
    Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V


    Original     		PDF 2SC2782 2SC2782 to175 NPN 2SC2782 transistor 2sc2782

    MRF247

    Abstract: amplifier mrf247 865 RF transistor
    Text: MRF247 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF247 is Designed for 12.5 V VHF large signal amplifier applications up to 175 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 7.0 dB at 75 W/175 MHz


    Original     		PDF MRF247 MRF247 amplifier mrf247 865 RF transistor

    Untitled

    Abstract: No abstract text available
    Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV030 TVV030

    MRF648

    Abstract: MRF648 applications MRF648 Data Sheet MRF648 equivalent
    Text: MRF648 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF648 is Designed for 12.5 V UHF large signal amplifier applications up to 512 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 4.4 dB at 60 W/470 MHz


    Original     		PDF MRF648 MRF648 MRF648 applications MRF648 Data Sheet MRF648 equivalent

    AVF250

    Abstract: ASI10571
    Text: AVF250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B The ASI AVF250 is a high power ClassC transistor designed for IFF/BME/TACAN applications in 1025-1150 MHz range. ØD C E F G H FEATURES:


    Original     		PDF AVF250 AVF250 ASI10571

    TBA950

    Abstract: TBA950-2X TBA 950 2x 2X transistor TBA9502X Phase Control Circuit RC oscillator in inverter circuit diagram filter stage flyback 50hz oscillator inverter Circuit diagram 15625-Hz
    Text: TBA950:2X APLESSEY W Sem iconductors, FOR MAINTENANCE PURPOSES ONLY: DO NOT USE FOR NEW DESIGNS TBA950: 2X LINE OSCILLATOR COMBINATION The T B A 9 5 0 :2 X is a monolithic integrated circuit for pulse separation and line synchronisation in TV receivers with transistor output stages.


    OCR Scan     		PDF TBA950 TBA950: TBA950-2X TBA 950 2x 2X transistor TBA9502X Phase Control Circuit RC oscillator in inverter circuit diagram filter stage flyback 50hz oscillator inverter Circuit diagram 15625-Hz

    Untitled

    Abstract: No abstract text available
    Text: CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N -P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 0.70 0.50 ’S 1 Pin configuration 1.4 1.2 1 = BASE 2 = EMITTER 3 = COLLECTOR J R0.1 .004 ' <l< R 0.0S 0.12 W (.002) 0.02


    OCR Scan     		PDF CMBT4401

    Untitled

    Abstract: No abstract text available
    Text: CMBT4401 SILICON PLAN AR EPITAXIAL TRANSISTOR N-P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 « COLLECTOR 2.4 _L02 0.89* 2.00 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CMBT4401