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    TRANSISTOR 2X5 Search Results

    TRANSISTOR 2X5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2X5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611 PDF

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586 PDF

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F PDF

    BLY94

    Abstract: philips bly94
    Text: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­


    OCR Scan     		002T75fl BLY94 7Z67S60 BLY94 philips bly94 PDF

    ferroxcube 4322

    Abstract: PRC201 SMD CAPACITOR L27 BLV2048 smd L17 npn
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D374 BLV2048 UHF push-pull power transistor Preliminary specification 1999 Apr 23 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 PINNING - SOT494A FEATURES • Emitter ballasting resistors for optimum temperature


    Original     		M3D374 BLV2048 OT494A SCA63 budgetnum/printrun/ed/pp15 ferroxcube 4322 PRC201 SMD CAPACITOR L27 BLV2048 smd L17 npn PDF

    l17c

    Abstract: 727 Transistor power values BLF246B
    Text: DISCRETE SEMICONDUCTORS 0 Â T Â Sin] H T BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 Philips Semiconductors 2000 Feb 04 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor


    OCR Scan     		BLF246B OT161A -SOT161A OT161A l17c 727 Transistor power values BLF246B PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 86D 01128 ObE D bbS3T31 DD133bb fl D BLU53 _ V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the-30 to 400 M H z range.


    OCR Scan     		bbS3T31 DD133bb BLU53 the-30 PDF

    BLU53

    Abstract: 2929 transistor
    Text: N AMER PHIL^ PS / DISCRETE 86D 01126 ObE D • t>b53T31 00133bfci fl D 'T - 3 '3 ’ / ^ BLU53 V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in m ilitary and professional wideband applications in the-30 to 4 0 0 M H z range.


    OCR Scan     		bbS3T31 00133bb BLU53 the-30 BLU53 2929 transistor PDF

    transistor smd ba rn

    Abstract: sot494
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c


    OCR Scan     		IS-95. BLV2048 OT494A SCA61 /printrun/ed/pp15 transistor smd ba rn sot494 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c


    OCR Scan     		IS-95. BLV2048 OT494A PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    TPV8100B

    Abstract: No abstract text available
    Text: TPV8100B TPV8100B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization


    Original     		TPV8100B TPV8100B PDF

    TPV-3100

    Abstract: TPV3100 transistor tpv3100
    Text: ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV3100 is a Class AB Common Device Designed for Television Band IV & V Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting Internal Matching • PACKAGE STYLE .450 BAL FLG. A


    Original     		TPV3100 TPV3100 TPV-3100 transistor tpv3100 PDF

    25 ohm semirigid

    Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400
    Text: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l


    Original     		UF2840G 1000pF t-500pF 25 ohm semirigid capacitor 50uf UF2840G resistor 1.2k capacitor J 400 PDF

    Untitled

    Abstract: No abstract text available
    Text: AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802B/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V


    Original     		AON5802B AON5802B/L AON5802B AON5802BL -AON5802BL 1E-04 PDF

    transistor BD 135

    Abstract: capacitor J336 J336 transistor k 2843 TPV8200B EQUIVALENT OF K 2843
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPV8200B The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­


    OCR Scan     		TPV8200B TPV8200B 156-C transistor BD 135 capacitor J336 J336 transistor k 2843 EQUIVALENT OF K 2843 PDF

    tpv8100

    Abstract: TPV8100B
    Text: TPV8100B TPV8100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100 is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: PACKAGE STYLE .438X.450 4LFL • Internal Input, Output Matching • Common Emitter Configuration


    Original     		TPV8100B TPV8100 TPV8100 TPV8100B PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    AON5802

    Abstract: No abstract text available
    Text: AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5802 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is


    Original     		AON5802 AON5802 D210s PDF

    Untitled

    Abstract: No abstract text available
    Text: AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802B/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX)


    Original     		AON5802B AON5802B/L AON5802B AON5802BL -AON5802BL PDF

    Untitled

    Abstract: No abstract text available
    Text: AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5802 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is


    Original     		AON5802 AON5802 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5802 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is


    Original     		AON5802 AON5802 AON5802L PDF

    Untitled

    Abstract: No abstract text available
    Text: AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5802 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is


    Original     		AON5802 AON5802 PDF

    TPV3100

    Abstract: TPV-3100 transistor tpv3100 "Power TRANSISTOR"
    Text: ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 8L FLG The ASI TPV3100 is a Class A Common Device Designed for Television Band III Applications. C D F U LL R G O F E FEATURES INCLUDE: .1925 • Gold Metalization • Emitter Ballasting


    Original     		TPV3100 TPV3100 TPV-3100 transistor tpv3100 "Power TRANSISTOR" PDF