SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
|
Original
|
2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
SE012
SE090
SE140N
SE115N
diode
2SC5487
sta474a
8050e
SE110N
SLA-7611
|
PDF
|
Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
|
Original
|
2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
Varistor RU
SE110N
transistor
2SC5487
2SA2003
SE090N
high voltage transistor
SE090
RBV-406
2SC5586
|
PDF
|
2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
|
Original
|
2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2SC5586
transistor 2SC5586
diode RU 3AM
2SA2003
microwave oven diode
single phase bridge rectifier IC with output 1A
2SC5487
RG-2A Diode
Dual MOSFET 606
TFD312S-F
|
PDF
|
TRANSISTOR SMD 2y
Abstract: smd transistor 2y smd transistor marking 2y 2Y smd smd marking 2y CMBT3905
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE
|
Original
|
ISO/TS16949
OT-23
CMBT3905
C-120
TRANSISTOR SMD 2y
smd transistor 2y
smd transistor marking 2y
2Y smd
smd marking 2y
CMBT3905
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMBT3905 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)
|
OCR Scan
|
CMBT3905
|
PDF
|
smd transistor marking 2y
Abstract: TRANSISTOR SMD 2y smd transistor 2y 2Y smd CMBT3905
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
|
Original
|
OT-23
CMBT3905
C-120
smd transistor marking 2y
TRANSISTOR SMD 2y
smd transistor 2y
2Y smd
CMBT3905
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y
|
Original
|
OT-23
CMBT3905
C-120
|
PDF
|
diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: L CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
|
OCR Scan
|
CMBT3905
23fl33T4
D000fi20
23A33T4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CI CMBT3905 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.4 2.6 2.4 1.2 R0.1 -004 ' _L02 0.60 0.40 0.70
|
OCR Scan
|
CMBT3905
|
PDF
|
2SC5436
Abstract: 2SC5786 4550 nec IC 7432 data
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor
|
Original
|
PA861TC
2SC5436,
2SC5786)
S21e2
2SC5436
2SC5786
2SC5436
2SC5786
4550 nec
IC 7432 data
|
PDF
|
CMBT3905
Abstract: No abstract text available
Text: CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.48 038 0.14 0.09 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2 .4 _L02 ' € 0.60 0.40
|
OCR Scan
|
CMBT3905
100nA;
CMBT3905
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MPSA44 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. " " TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package: TO-92 * Complement To MPSA94 * High Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc=625mA Ta=25<>C
|
OCR Scan
|
MPSA44
MPSA94
625mA
300uS,
100uA
100mA
|
PDF
|
transistor BC 247
Abstract: BC 247 b transistor
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445
|
OCR Scan
|
NTE74426
14-Lead
NTE74LS445
16-Lead
NTE74S474,
24-Lead
NTE74S475
4096-Bit
NTE74HC574,
20-Lead
transistor BC 247
BC 247 b transistor
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
PHP33N10
T0220AB
|
PDF
|
tme 126
Abstract: MGW12N120 IC9012 Bipolar WPC
Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.
|
Original
|
MGW12N120
O-247
10USminimum
tme 126
MGW12N120
IC9012
Bipolar WPC
|
PDF
|
NTE74HC14
Abstract: NTE74HCt14 NTE74C14 NTE7420 NTE7421 NTE74HC11 NTE7413 NTE7410 NTE7416 NTE74C20
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7410, NTE74C10, 14-Lead DIP, See Diag. 247 NTE74H10, NTE74HC10, NTE74LS10, NTE74S10 Triple 3-Input Positive NAND Gate u r i NTE7411, MTE74H11, 14-Lead DIP, See Diag. 247 NTE74HC11, NTE74LS11, NTE74S11
|
OCR Scan
|
NTE7410,
NTE74C10,
14-Lead
NTE74H10,
NTE74HC10,
NTE74LS10,
NTE74S10
NTE7411,
MTE74H11,
NTE74HC14
NTE74HCt14
NTE74C14
NTE7420
NTE7421
NTE74HC11
NTE7413
NTE7410
NTE7416
NTE74C20
|
PDF
|
NTE7404
Abstract: NTE74HC04 transistor 6y NTE7406 NTE74LS05 NTE7400 NTE7408 NTE7409 NTE74LS04 NTE74LS00
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7214 16-Lead DIP, See Diag. 249 TRI-STATE Dual 4:1 Multiplexer NTE740Q, NTE74C00, 14-Lead DIP, See Diag. 247 NTE74H00, NTE74HC00, NTE74HCT00, NTE74LS00, NTE74S00 14-Lead DIP, See Diag. 247 NTE7401,
|
OCR Scan
|
NTE7214
16-Lead
NTE74H01
14-Lead
NTE7404,
NTE74C04,
NTE74H04,
NTE74HC04,
NTE74HCT04,
NTE7404
NTE74HC04
transistor 6y
NTE7406
NTE74LS05
NTE7400
NTE7408
NTE7409
NTE74LS04
NTE74LS00
|
PDF
|
NTE7493A
Abstract: NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74HC86 NTE74C90
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator NTE74S6, NTE74HC86,14-Lead DIP, See Diag. 247 NTE74LS86, NTE74S86
|
OCR Scan
|
NTE7485,
16-Lead
NTE74LS85,
NTE74S85
NTE74C85
NTE74S6,
NTE74HC86
14-Lead
NTE74LS86,
NTE7493A
NTE7490
NTE74LS86
NTE74LS90
NTE7495
NTE74S86
NTE7486
NTE7489
NTE74C90
|
PDF
|
CBC 557 C
Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor
Text: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB
|
OCR Scan
|
|
PDF
|
NTE74LS244
Abstract: NTE74LS248 NTE74LS247 NTE74C221 NTE74HC244 NTE74LS245 NTE74LS240 NTE74HC259 NTE74HCT244 NTE74LS221
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register NTE74221, 16-Lead DIP, See Diag. 249 NTE74C221, NTE74LS221 Dual Monostable Multivibrator Q V cc ^ Shift/Load 3 QH ^ Input G
|
OCR Scan
|
NTE74199
24-Lead
NTE74221,
16-Lead
NTE74C221,
NTE74LS221
NTE74C240,
20-Lead
NTE74HC240,
NTE74HCT240,
NTE74LS244
NTE74LS248
NTE74LS247
NTE74C221
NTE74HC244
NTE74LS245
NTE74LS240
NTE74HC259
NTE74HCT244
NTE74LS221
|
PDF
|
NTE74LS21
Abstract: NC3A
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7410, NTE74C10, 14-Lead DIP, See Diag. 247 NTE74H10, NTE74HC10, NTE74LS10, NTE74S10 Triple 3-Input Positive NAND Gate NTE7411, NTE74H11, 14-Lead DIP, See Diag. 247 NTE74HC11, NTE74LS11, NTE74S11 Triple 3-Input Positive AND Gate
|
OCR Scan
|
NTE7410,
NTE74C10,
14-Lead
NTE74H10,
NTE74HC10,
NTE74LS10,
NTE74S10
NTE7411,
NTE74H11,
NTE74LS21
NC3A
|
PDF
|
ADI1797
Abstract: sot 223
Text: . Order this data sheet by MMH107T1/D MOTOROLA SEMICONDUCTOR ● TECHNICAL DATA a Advance Information Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount m This TMOS medium Dower field effect transistor is desianed for
|
Original
|
MMH107T1/D
OT-223
MK145BP.
4-32-l,
ADI1797
sot 223
|
PDF
|
nte74s571
Abstract: NTE74HC573 NTE74HC574 NTE74HCT573 NTE74S474 NTE74S573 512x8 PROM NTE74LS541 NTE74S472 NTE74LS490
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling NTE74LS445 16-Lead DIP, See Diag. 249 BCD-to-Decimal Decoder/Driver w/Open Collector Outputs NTE74S472 20-Lead DIP, See Diag. 294
|
OCR Scan
|
NTE74426
14-Lead
NTE74S474,
NTE74S475
4096-Bit
512x8)
NTE74S474:
NTE74S475:
NTE74LS445
16-Lead
nte74s571
NTE74HC573
NTE74HC574
NTE74HCT573
NTE74S474
NTE74S573
512x8 PROM
NTE74LS541
NTE74S472
NTE74LS490
|
PDF
|