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    TRANSISTOR 30 J 124 Search Results

    TRANSISTOR 30 J 124 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 30 J 124 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tr 30 f 124

    Abstract: Q67000-S172 ss124
    Text: BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.5 .2.5 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 124 400 V 0.12 A 28 Ω TO-92 SS 124 Type BSS 124 Ordering Code Q67000-S172 S Tape and Reel Information


    Original     		PDF Q67000-S172 E6288 tr 30 f 124 Q67000-S172 ss124

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power


    Original     		PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz

    mos 4069

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power


    Original     		PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Oct2011 mos 4069

    RD04HMS2

    Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
    Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


    Original     		PDF RD04HMS2 175MHz, 950MHz, 14dBtyp. 950MHz UHF/890-950MHz RD04HMS2 JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445

    RD04HMS2

    Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
    Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


    Original     		PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Handling Precautions for MOSFET 043mm 14dBtyp

    qm300dy-h

    Abstract: qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c
    Text: Transistor modules Double arm ,center tap V cêx h *8 I j-r Type No. Pe Transistor section Ve *¥ e (sus) (V) (A) (A) (Wl p (A) 600 30 1.8 250 150 30 QMSOCY-H 600 50 3 310 150 QM75CY-H 600 75 4.5 350 150 QMtOOCY-H 600 100 6 620 150 100 QM150CY-H 600 150


    OCR Scan     		PDF QM75CY-H QM150CY-H QM30CY-H qm300dy-h qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c

    LP1983

    Abstract: motorola 039
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ


    OCR Scan     		PDF LP1983 MRF901 Temperat13 IS22I LP1983 motorola 039

    RTM 866 - 485

    Abstract: No abstract text available
    Text: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF 023ti32Q BFP93A 62702-F OT-143 RTM 866 - 485

    Untitled

    Abstract: No abstract text available
    Text: - 3 3 H 3 RZ3135B50W PHILIPS INTERNATIONAL 5bE ]> • Tiio aat. 0 0 4 ^ 0 2 124 ■ p h in PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 3.1 to 3.5 GHz.


    OCR Scan     		PDF RZ3135B50W

    ic TT 2222

    Abstract: transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98
    Text: PHILIPS INTERNATIONAL bSE D • PHIN 711Dfl5b 00b3432 124 JL BLW98 U.H.F. LINEAR POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.


    OCR Scan     		PDF 711005b 00b3432 BLW98 D0b344D ic TT 2222 transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98

    Untitled

    Abstract: No abstract text available
    Text: KSC3074 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER SWITCHING • C om p le m en t to K SA 1244 ABSOLUTE MAXIMUM RATINGS Symbol C haracteristic Rating Unit C o lle cto r Base Voltage C o lle cto r E m itter V oltage VCBG j 60 V VCEO I 50 Em itter Base Voltage


    OCR Scan     		PDF KSC3074

    2SD1762

    Abstract: 230S d1760 D1864
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type


    OCR Scan     		PDF 2SD1760/2SD1864/2SD1762 2SB1184/ 1243/2SB1185. 2SD1760 2SD1864 2SD1762 O-126 O-220, 0Dlb713 230S d1760 D1864

    MEL78D

    Abstract: No abstract text available
    Text: DESCRIPTION M E L 78D transistor rejective features sensitivity CRO is NPN silicon planar photowith 3mm dim eter light filter epoxy package. It ultra high. illum ination and fast response time. <°-124> n 5.3 • • NPN SILICON PHOTO TRANSISTOR A,ì dimension in mm incb


    OCR Scan     		PDF MEL78D 100itA 100/iA of2354Â

    Untitled

    Abstract: No abstract text available
    Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol j C o lle cto r Base Voltage C o lle cto r E m itter Voltage Vceo


    OCR Scan     		PDF KSC3076

    HA12413

    Abstract: 2SC458 C,D 2SA1029 2SC458 transistor 2sc458 Peak level meter ic Audio Circuit with IC 701
    Text: H A 1 2 4 1 3 FM/AM IF SYSTEM The H IT A C H I H A 12413 is an IC fo r FM /A M IF system. Typical applications include cassette radios and modular stereos, fu n ctio ning and featuring as follow s. • FUNCTI ONS FM • IF A m p lilfie r With C.F. is inserted between the stages


    OCR Scan     		PDF HA12413 DP-16) 33dBju) --45dB --10dBju) 455kH 2SC458 C,D 2SA1029 2SC458 transistor 2sc458 Peak level meter ic Audio Circuit with IC 701

    BSS124

    Abstract: No abstract text available
    Text: SIEMENS BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 -2.5 V Pin 1 Pin 2 G Type BSS 124 Vos 400 V % 0.12 A Type BSS 124 Ordering Code Q67000-S172 %S(on) 28 0 Pin 3 D Package Marking TO-92 SS 124 S Tape and Reel Information


    OCR Scan     		PDF Q67000-S172 E6288 BSS124

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSS 124 S IP M O S Sm all-Signal Transistor • N channel • Enhancement mode ^GS th = 1-5 .2.5 V Pin 1 Pin 2 D G Type ^DS BSS 124 400 V Type BSS 124 Ordering Code Q67000-S172 0.12 A Pin 3 f f DS(on) Package Marking 28 £1 TO-92 SS 124 S Tape and Reel Information


    OCR Scan     		PDF Q67000-S172 E6288

    RCA-CA124

    Abstract: CA324 CA124 CA224 92CS-24Z06 ca3243 transistor S67 ic lm324 LM324 transistor v15
    Text: Operational Amplifiers _ 5 ' H _ C A 124, C A 224, C A 324, L M 3 2 4 * Q uad Operational Amplifiers For Com m erical, Industrial, and M ilitary Applications Features: • ■ • • ■ ■ • O p é ra tio n fro m s in g le o r d u a l s u p p lie s


    OCR Scan     		PDF CA124, CA224, CA324, LM324 CA324 CA124 RCA-CA124, RCA-CA124 CA124 CA224 92CS-24Z06 ca3243 transistor S67 ic lm324 LM324 transistor v15

    74LS247

    Abstract: 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ 13 □ 12 □ 11 □ 10 □ 9 □ 8 □ 8 OUTPUT A □ Vcc □ OUT B 7 2 +IN A Q 3 -IN A ^ 4 GND 6 □ +IN B 5 □ -IN B 2 OUT D Vss OUT C OUT C IN C I27 I28 mA5SS 131 7528, 7529


    OCR Scan     		PDF mA2240 mA555 74LS247 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143

    HEMT marking P

    Abstract: No abstract text available
    Text: SA NY O S E M I C O N D U C T O R CORP T W O T b SEE D OOObTOO 3 T-3Ì - IS 2SK1240-1243 HEMT Series 2072 2073 N-Channel AIGaAs/GaAs Hetero Junction FET X-Band Very Low-l\loise Amp Applications 3186 Features • Very low noise & ' High associated gain


    OCR Scan     		PDF 2SK1240-1243 2SK1241 2SK1243 HEMT marking P

    RCA LM324

    Abstract: LM324L
    Text: Operational Amplifiers HARRIS S E M I C O N D U C T O R RCA C A 124, C A 224, CA324, C A 2902, LM 324*, LM 2902* INTERSIL May 1990 Quad Operational Amplifiers For Commercial, Industrial, and Military Applications Features: A pp lica tio n s: • a a a ■


    OCR Scan     		PDF CA324, CA224, CA2902, LM324, LM2902 CA124 CA124, RCA LM324 LM324L

    2SK1240-1243

    Abstract: pa 2030a 2SK1241 2SK1240 2SK1242 2SK1243
    Text: SANYO SEMICONDUCTOR CORP SEE 7T1707b D GOObTOO 3 T-3Ì -ZS 2SK1240-1243 HEMT Series 2072 N -C hannel AIGaAs/GaAs H etero J u n c tio n FET 2073 X-Band Very Low-l\loise Am p Applications 3186 F e a tu re s • Very low noise • High associated gain &


    OCR Scan     		PDF 2SK1240-1243 2SK1241 2SK1243 2SK1240-1243 pa 2030a 2SK1240 2SK1242 2SK1243

    dvr circuit diagram

    Abstract: st l 9302 transistor d145 mos 9368 9374 f 9368 7 seg bcd 74LS49 D133 D142
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ IN D 13 □ OUT 12 □ OUT 11 □ Vss 10 □ OUT 9 O UT □ 8 □ IN C 8 OUTPUT A □ V cc 7 2 +IN A Q □ OUT B 6 3 -IN A ^ □ +IN B 5 4 GND □ -IN B CONTROL p VOLTAGE 4 - D


    OCR Scan     		PDF mA2240 mA555 dvr circuit diagram st l 9302 transistor d145 mos 9368 9374 f 9368 7 seg bcd 74LS49 D133 D142

    FRG25AA60

    Abstract: diode B87 SANSHA FRG25AA FRG25AA40 H150
    Text: SANSHA ELECTRIC MFC CO SbE 7^1243 D 00 00 47 1 FRG25AA40/60 SEM J Ô77 X-z^-o^ F R G 2 5 A A is a medium power isolated mould diode suitable for high frequency application. • • • • • High Speed t r r ^ 2 0 0 n s If av>= 25A Isolated Mould devices with ViSo = 2500V


    OCR Scan     		PDF FRG25AA40/60 FRG25AA trrg200ns FRG25AA40 FRG25AA60 FRG25AA60 diode B87 SANSHA H150