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    TRANSISTOR 3005 2 Search Results

    TRANSISTOR 3005 2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3005 2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 30054

    Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
    Text: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications


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    transistor 3005

    Abstract: No abstract text available
    Text: 3005 5 Watts - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE The 3005 is a COMMON BASE transistor capable of providing 5 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor


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    transistor ESM 3004

    Abstract: ESM3004 ESM 3004 2060T transistor ESM 2060T transistor WLM transistor ESM 30 transistor ESM 3001 ESM 3005 npn 1000V 100a
    Text: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide


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    O-220 00V-600V 1000T 2060T CB-70 transistor ESM 3004 ESM3004 ESM 3004 2060T transistor ESM 2060T transistor WLM transistor ESM 30 transistor ESM 3001 ESM 3005 npn 1000V 100a PDF

    BC818

    Abstract: BC846 BC847 BC848 BC849 BC850 BC856 BC857 BC807 BC808
    Text: See below for Part # RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 - Power Transistor and Darlingtons Maximum Ratings Part # Polarity VCBO VCEO VEBO PD IC V (V) (V) ( W) (A) Min Min Min @ 25 OC *BC807 *BC808 *BC817 *BC818 *BC846 *BC847 *BC848 *BC849


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    OT-23 BC807 BC808 BC817 BC818 BC846 BC847 BC848 BC849 BC850 BC818 BC846 BC847 BC848 BC849 BC850 BC856 BC857 BC807 BC808 PDF

    MP1470

    Abstract: transistor tip 3005 ITT Intermetall itt capacitor caption ITT ccu 3000 i 65C02 RTD 2482
    Text: MICRONAS INTERMETALL CCZ 3005 H Central Control Unit MICRONAS Edition March 13, 1996 6251-412-2DS CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 6 6 8 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34


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    6251-412-2DS MP1470 transistor tip 3005 ITT Intermetall itt capacitor caption ITT ccu 3000 i 65C02 RTD 2482 PDF

    ITT ccu 3000 i

    Abstract: No abstract text available
    Text: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.


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    6251-412-2DS 4bfl2711 4bfi2711 ITT ccu 3000 i PDF

    RS 3005 CL

    Abstract: E1 3009 LM119
    Text: INCH-POUND MIL-M-38510/103H 18 February 2005 SUPERSEDING MIL-M-38510/103G 03 November 2004 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE COMPARATORS, MONOLITHIC SILICON Reactivated after 18 February 2005 and may be used for either new or existing design acquisition.


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    MIL-M-38510/103H MIL-M-38510/103G MIL-PRF-38535. LM106 LM111 LH2111 LM119 LT119A RS 3005 CL E1 3009 LM119 PDF

    Untitled

    Abstract: No abstract text available
    Text: MC10EP57, MC100EP57 3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open pulled LOW via the input pulldown resistors the device can also be used as a differential 2:1 multiplexer


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    MC10EP57, MC100EP57 MC10/100EP57 MC10EP57/D PDF

    103H transistor

    Abstract: E1 3007 GDFP1-G10 MIL-M-38510 103H GDFP2-F16 e74 330 diode marking e41 RS 3005 CL LM119
    Text: INCH-POUND MIL-M-38510/103H 18 February 2005 SUPERSEDING MIL-M-38510/103G 03 November 2004 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE COMPARATORS, MONOLITHIC SILICON Reactivated after 18 February 2005 and may be used for either new or existing design acquisition.


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    MIL-M-38510/103H MIL-M-38510/103G MIL-PRF-38535. part02 LM106 LM111 LH2111 LM119 LT119A 103H transistor E1 3007 GDFP1-G10 MIL-M-38510 103H GDFP2-F16 e74 330 diode marking e41 RS 3005 CL PDF

    transistor buv 90

    Abstract: transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C
    Text: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide


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    O-220 00V-600V 1000T 2060T CB-244 CB-285 transistor buv 90 transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C PDF

    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B PDF

    maa 502

    Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
    Text: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik


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    PS2501 optocoupler

    Abstract: LED pspice LED pspice model AN-3005 LED pspice datasheet pspice model pspice PS2501 PS2501-1 OPTOCOUPLER USED IN SIGNAL ISOLATOR
    Text: A p p l i c at i o n N o t e AN 3005 Modeling phototransistor optocouplers using PSPICE simulation software CTR vs If by Van N. Tran Sample A B C D Staff Applications Engineer, CEL Opto Semiconductors Typically, an optocoupler is an optically-coupled isolator that uses a GaAs LED as a light source and a bipolar


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    Untitled

    Abstract: No abstract text available
    Text: MC100EP40 3.3V / 5V ECL Differential Phase-Frequency Detector Description The MC100EP40 is a three−state phase−frequency detector intended for phase−locked loop applications which require a minimum amount of phase and frequency difference at lock. Advanced design


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    MC100EP40 MC100EP40 MC100EP40/D PDF

    PT 2102 ic

    Abstract: MIL-PRF-19500 TRANSISTOR SUBSTITUTION DATA BOOK 2N3847 LM 3041 2N3846
    Text: This documentation process conversion measures necessary to comply with this revision shall be completed by 27 September 1999. INCH-POUND MIL-PRF-19500/412B USAF 27 July 1999 SUPERSEDING MIL-S-19500/412A(USAF) 19 June 1990 PERFORMANCE SPECIFICATION SHEET


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    MIL-PRF-19500/412B MIL-S-19500/412A 2N3846, 2N3847, PT 2102 ic MIL-PRF-19500 TRANSISTOR SUBSTITUTION DATA BOOK 2N3847 LM 3041 2N3846 PDF

    transistor smd hq

    Abstract: No abstract text available
    Text: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which


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    HM-65642 HM-65642 80C86 80C88 transistor smd hq PDF

    DIM800ECM33-F000

    Abstract: No abstract text available
    Text: DIM800ECM33-F000 Single Switch IGBT Module DS5815-1.0 Nov. 2004 LN23667 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base-plate with AIN Substrate KEY PARAMETERS VCES VCE (sat)*


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    DIM800ECM33-F000 DS5815-1 LN23667) DIM800ECM33-F000 PDF

    DIM1200ESM33-F000

    Abstract: No abstract text available
    Text: DIM1200ESM33-F000 Single Switch IGBT Module DS5831-1.0 JULY. 2005 LN23824 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated MMC Base with AIN Substrates • Lead Free construction • High Thermal Cycling Capability KEY PARAMETERS


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    DIM1200ESM33-F000 DS5831-1 LN23824) DIM1200ESM33-F000 PDF

    Untitled

    Abstract: No abstract text available
    Text: MC10EP451, MC100EP451 3.3V / 5V ECL 6-Bit Differential Register with Master Reset Description The MC10/100EP451 is a 6−bit fully differential register with common clock and single−ended Master Reset MR . It is ideal for very high frequency applications where a registered data path is


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    MC10EP451, MC100EP451 MC10/100EP451 MC10EP451/D PDF

    2N 326 Transistor

    Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
    Text: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV


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    130CIV 109DP O-220 104DP CB-70 2N 326 Transistor transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor PDF

    m 1305

    Abstract: Marking D1c MC10EP101 MC10EP101FA MC10EP101FAR2 D1C marking ep101 transistor 3005 2
    Text: MC10EP101 Quad 4-Input OR/NOR The MC10EP101 is a Quad 4–input OR/NOR gate. The device is functionally equivalent to the E101. With AC performance faster than the E101 device, the EP101 is ideal for applications requiring the fastest AC performance available. All VCC and VEE pins must be


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    MC10EP101 MC10EP101 EP101 250ps AND8003/D r14525 MC10EP101/D m 1305 Marking D1c MC10EP101FA MC10EP101FAR2 D1C marking transistor 3005 2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MC10EP29, MC100EP29 3.3V / 5V ECL Dual Differential Data and Clock D Flip-Flop With Set and Reset http://onsemi.com Description The MC10/100EP29 is a dual master−slave flip−flop. The device features fully differential Data and Clock inputs as well as outputs.


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    MC10EP29, MC100EP29 MC10/100EP29 MC10/100EL29. MC10EP29/D PDF

    c 945 TRANSISTOR equivalent

    Abstract: No abstract text available
    Text: MC100EP16VC 3.3V / 5V ECL Differential Receiver/Driver with High Gain and Enable Output The EP16VC is a differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output. The EP16VC provides an EN input which is synchronized with the


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    MC100EP16VC EP16VC LVEP16 remains00 MC100EP16VC AND8020 c 945 TRANSISTOR equivalent PDF

    HA11-7

    Abstract: No abstract text available
    Text: european space agency agence spatiale européenne Pages 1 to 51 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC 256K 32768x8 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE M65656 ESA/SCC Detail Specification No. 9301/030


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    32768x8 M65656 HA11-7 PDF