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    TRANSISTOR 305 Search Results

    TRANSISTOR 305 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 305 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC 2403

    Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
    Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.


    Original     		PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 NEC 2403 3181 R33 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614

    AT-30533-TR1

    Abstract: AT-310 AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA


    Original     		PDF AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, AT-30533-TR1 AT-310 AT-30511-BLK AT-30511-TR1 AT-30533-BLK

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP31C


    Original     		PDF TIP32C TIP32C TIP31C TIP32CL-TA3-T TIP32CG-TA3-T TIP32CL-T60-K TIP32CG-T60-K TIP32CL-T6S-K TIP32CG-T6S-K TIP32CL-TN3-R

    TIP32CG

    Abstract: TIP32C Silicon PNP Epitaxial Planar Transistor to220 TIP32CL-TN3-R TIP31C TIP32C-TN3-R TIP31c PNP Transistor TIP32CL UTCTIP32C
    Text: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP31C


    Original     		PDF TIP32C TIP32C TIP31C TIP32CL TIP32CG TIP32C-TA3-T TIP32C-TN3-R TIP32CL-TA3-T TIP32CL-TN3-R TIP32CG-TA3-T TIP32CG Silicon PNP Epitaxial Planar Transistor to220 TIP32CL-TN3-R TIP31C TIP32C-TN3-R TIP31c PNP Transistor TIP32CL UTCTIP32C

    sot-23 marking code 352

    Abstract: AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK AT-30533-TR1 AT-310 AT30533
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA


    Original     		PDF AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, sot-23 marking code 352 AT-30511-BLK AT-30511-TR1 AT-30533-BLK AT-30533-TR1 AT-310 AT30533

    BD443

    Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power


    Original     		PDF BLW76 BD443 BLW76 BD228 philips polystyrene capacitor MGP501

    Philips polystyrene capacitors

    Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB


    Original     		PDF BLW76 SC08a Philips polystyrene capacitors capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59

    2SC5005

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF 2SC5005 2SC5005

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


    Original     		PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2

    2N3054

    Abstract: C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054
    Text: 2 N 3054 NPN Power transistor for AF amplifier and switching applications 2 N 3 0 5 4 is a single-diffused N P N silicon transistor in a T O -6 6 case. The collector is electrically connected to the case. The transistor 2 N 3 0 5 4 is particularly suitable


    OCR Scan     		PDF 2N3054 Q62702-U Q62901-B Q62901-B11 200mA 160mA 120mA 100mA C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054

    3055 transistor

    Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
    Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


    OCR Scan     		PDF D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 3055 transistor 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055

    3055 transistor

    Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
    Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


    OCR Scan     		PDF D004T11 Q62702-U58 005ms aa35b05 3055 transistor transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3

    transistor 3055

    Abstract: 3055 3055 transistor n3055 3055 npn 10a v150 T 3055 on 3055 A 3055 Q62702-U58
    Text: IMPIM-Transistor fü r leistungsstarke IMF-Endstufen 2 IM 3055 2 N 3 0 5 5 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 D IN 41 8 72 T O - 3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten


    OCR Scan     		PDF Q62702-U58 Q62702-U58-P Q62901â B11-A Q62901-B13-C transistor 3055 3055 3055 transistor n3055 3055 npn 10a v150 T 3055 on 3055 A 3055

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    A 564 transistor

    Abstract: 3181 R33 transistor A 564
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4227 2SC4227 SC-70 A 564 transistor 3181 R33 transistor A 564

    transistor NEC D 587

    Abstract: 3181 R33 transistor c 3181
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 transistor NEC D 587 3181 R33 transistor c 3181

    IC SEM 2105

    Abstract: common emitter transistors
    Text: What H E W L E T T * miltm PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


    OCR Scan     		PDF AT-30511 AT-30533 AT-30533 OT-23 OT-143 sAT-30511 OT-23, IC SEM 2105 common emitter transistors

    transistor 3055

    Abstract: 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055
    Text: 2 N 3055 NPN Transistor for high-power A F output stages 2 N 3 0 5 5 is a single-diffused N P N silicon transistor in a case 3 A 2 D IN 4 1 8 7 2 T O -3 . The collector is electrically connected to the case. The transistor is particularly designed for use iri high -pow er A F output stages and in stabilized pow er supplies.


    OCR Scan     		PDF 62702-U Q62901-B 45toi< 200mA 100mA -10mA transistor 3055 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055

    Philips polystyrene capacitor

    Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor
    Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear


    OCR Scan     		PDF OT121B. BLW76 MGP517 Philips polystyrene capacitor ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor

    AT-30533

    Abstract: No abstract text available
    Text: ÏÏS S i HEWLETT mLEM P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


    OCR Scan     		PDF AT-30511 AT-30533 AT-30533 OT-23 OT-143 OT-23,

    K 3053 TRANSISTOR

    Abstract: K 3053
    Text: 2N 3053 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLANAR EPITAXIAL General purpose : medium power amplification, commutation Usage généra! : am plificateur moyenne puissance, commutation. V CEO 40 V 'c 0,7 A Ptot 5 W Rth j-c 35°C/W


    OCR Scan     		PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    ZO 107 MA

    Abstract: 341S
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low


    OCR Scan     		PDF 2SC5009 2SC5009 ZO 107 MA 341S

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the


    OCR Scan     		PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T2