Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C
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TIP32C
TIP32C
TIP31C
TIP32CL-TA3-T
TIP32CG-TA3-T
TIP32CL-T60-K
TIP32CG-T60-K
TIP32CL-T6S-K
TIP32CG-T6S-K
TIP32CL-TN3-R
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TIP32CG
Abstract: TIP32C Silicon PNP Epitaxial Planar Transistor to220 TIP32CL-TN3-R TIP31C TIP32C-TN3-R TIP31c PNP Transistor TIP32CL UTCTIP32C
Text: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C
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TIP32C
TIP32C
TIP31C
TIP32CL
TIP32CG
TIP32C-TA3-T
TIP32C-TN3-R
TIP32CL-TA3-T
TIP32CL-TN3-R
TIP32CG-TA3-T
TIP32CG
Silicon PNP Epitaxial Planar Transistor to220
TIP32CL-TN3-R
TIP31C
TIP32C-TN3-R
TIP31c PNP Transistor
TIP32CL
UTCTIP32C
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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utc 2030
Abstract: marking 2G MMBTA55 MMBTA56 MMBTA56-AE3-R MMBTA56L MMBTA56L-AE3-R 4 1020 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal
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MMBTA56
350mW
OT-23
MMBTA56L
MMBTA56-AE3-R
MMBTA56L-AE3-R
QW-R206-090
utc 2030
marking 2G
MMBTA55
MMBTA56
MMBTA56-AE3-R
MMBTA56L
MMBTA56L-AE3-R
4 1020 transistor
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Transistor J550
Abstract: j584 transistor
Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26H200W03S
AFT26H200W03SR6
Transistor J550
j584 transistor
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smd transistor 6g
Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance
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BLS6G2731-6G
BLS6G2731-6G
smd transistor 6g
6G smd transistor
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
nxp 544
200B
TAJD106K035R
transistor equivalent table
sot975c
radar circuit component
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BLS7G2933S-150
Abstract: a 3150 data sheet JESD625-A
Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 1 — 12 November 2010 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS7G2933S-150
BLS7G2933S-150
a 3150 data sheet
JESD625-A
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Untitled
Abstract: No abstract text available
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
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Untitled
Abstract: No abstract text available
Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS7G2933S-150
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transistor d 1302
Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
transistor d 1302
smd transistor 927
smd transistor equivalent table
Duroid 6006
sot922
radar circuit component
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amplifier TRANSISTOR 12 GHZ
Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
amplifier TRANSISTOR 12 GHZ
smd transistor w J 3 58
smd transistor equivalent table
smd transistor 927
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BLS7G2933S-150
Abstract: radar amplifier s-band SOT922-1 JESD625-A
Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS7G2933S-150
BLS7G2933S-150
radar amplifier s-band
SOT922-1
JESD625-A
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Untitled
Abstract: No abstract text available
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
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Untitled
Abstract: No abstract text available
Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state
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ZXTP03200BG
OT223
-200V
-160mV
OT223
ZXTP03200BGTA
ZXTP03200BG
A1103-04,
522-ZXTP03200BGTA
ZXTP03200BGTA
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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TRANSISTOR T-03
Abstract: TRANSISTOR 618
Text: KSP42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Coilector-Em itter Voltage: VCeo“ KSP42: 300V KSP43: 200V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25T:) C haracteristic Sym bol Collector Base Voltage
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KSP42/43
KSP42:
KSP43:
625mW
KST42
KST43
KST42
TRANSISTOR T-03
TRANSISTOR 618
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Untitled
Abstract: No abstract text available
Text: MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise
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16-LEAD
10-LEAD
24-LEAD
12-LEAD
40-LEAD
20-LEAD
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marking mitsubishi
Abstract: oc pnp sc62
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1948 FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1948 is a resin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING unit mm designed with high voltage, high hFe and high fr.
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2SA1948
2SA1948
2SC5213.
200MHz
500mW
SC-62
270Hz
X10-4
marking mitsubishi
oc pnp sc62
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MPS8098
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage
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MPS8098
625mW
T-29-21
100/iA,
100MHz
300ms,
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE D bbS3R3i 0030503 Rob Product Specification Philips Sem iconductors BUK441-100A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK441-100A/B
OT186
BUK441
-100A
-100B
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K1 transistor
Abstract: No abstract text available
Text: KSC1983 NPN EPITAXIAL SILICON TRANSISTOR HIGH 0 POW ER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector-Base Voltage VcBO Symbol 80 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current VcEO 60 V V ebo 6 V lc 3 A Base Current
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KSC1983
--25mA,
K1 transistor
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A 3131
Abstract: CA3110 ca3109 CA3150 4-input nand gates ttl 4-input or gates ttl ca3104 CA3105 CA3125
Text: fl MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise
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3120/C,
3121/C
3122/C,
3123/C,
3124/C,
3125/C
3126/C
3128/C,
3129/C
3130/C
A 3131
CA3110
ca3109
CA3150
4-input nand gates ttl
4-input or gates ttl
ca3104
CA3105
CA3125
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transistor eb 2030
Abstract: transistor 2030 2SC5209 oc pnp sc62
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1944 FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1944 is a silicon PNP epitaxial type transistor. It is designed with OUTLINE DRAWING Unit m high voltage, high collector current and high hFE.
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2SA1944
2SA1944
2SC5209.
-500mA
-10mA)
SC-62
transistor eb 2030
transistor 2030
2SC5209
oc pnp sc62
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