BD135
Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
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MRF20030/D
MRF20030
BD135
BD136
MJD47
MRF20030
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ
MOTOROLA 727
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TH 2190 mosfet
Abstract: AN1955 MRF21180 MRF21180R6
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET
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MRF21180/D
MRF21180R6
TH 2190 mosfet
AN1955
MRF21180
MRF21180R6
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marking CODE n3 6PIN
Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
Text: 2010年3月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorDiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 2
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2SA1235
marking CODE n3 6PIN
MOSFET TRANSISTOR SMD MARKING CODE nh
INK0001AC
RT8H
2SA798 equivalent
2SC2259
marking code NJ SMD Transistor
MC931 diode
smd transistor marking A7 p7
transistor smd marking ka p7
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MOSFET 1300 F2
Abstract: 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET
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MRF19125/D
MRF19125R3
MOSFET 1300 F2
465B
AN1955
CDR33BX104AKWS
MRF19125
MRF19125R3
3052 mosfet
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies
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MRF9060M/D
MRF9060MBR1
DEVICEMRF9060M/D
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93F2975
Abstract: transistor WB1
Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies
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MRF9060M/D
MRF9060MBR1
DEVICEMRF9060M/D
93F2975
transistor WB1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies
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MRF9060M/D
MRF9060MBR1
DEVICEMRF9060M/D
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mallory 150 series
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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Inte153
MRF20030R
mallory 150 series
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Untitled
Abstract: No abstract text available
Text: ultrasonic sensor diffuse mode sensor Q45UBB63BCQ6 • ■ lower and upper switching range limit adjustable via teach button normally open or normally closed output functions ■ adjustable response time ■ pump function ■ pnp transistor output normally open
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Q45UBB63BCQ6
24VDC
2013-07-13T08
D-45472
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Untitled
Abstract: No abstract text available
Text: ultrasonic sensor diffuse mode sensor Q45UBB63BC • ■ lower and upper switching range limit adjustable via teach button normally open or normally closed output functions ■ adjustable response time ■ pump function ■ pnp transistor output normally open
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Q45UBB63BC
24VDC
SMB30A
SMB30MM
SMB30SC
2013-07-13T08
D-45472
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 7, 10/2008 RF Power Field Effect Transistor MRF19125SR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF19125
MRF19125SR3
MRF19125
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from
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MRF19125/D
MRF19125R3
MRF19125/D
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Untitled
Abstract: No abstract text available
Text: ultrasonic sensor diffuse mode sensor Q45UBB63DAQ6 • ■ lower and upper switching range limit adjustable via teach button normally open or normally closed output functions ■ adjustable response time ■ pump function ■ ■ pnp/npn transistor output normally
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Q45UBB63DAQ6
24VDC
2013-07-13T08
D-45472
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF21085-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF21085--1
MRF21085LR3
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MOSFET 1300 F2
Abstract: 100B100JCA500X 465B CDR33BX104AKWS MRF19125 MRF19125R3
Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 8, 10/2008 RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF19125
MRF19125R3
MOSFET 1300 F2
100B100JCA500X
465B
CDR33BX104AKWS
MRF19125
MRF19125R3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110
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MRF21180/D
MRF21180R6
MRF21180/D
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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OCR Scan
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PDF
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BUK443
Abstract: BUK443-100A BUK443-100B
Text: N AMER PHI LIPS /DISCRETE bTE D • b 1=53^31 D D 3 DSSD 112 M A P X Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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bbS3T31
BUK443-100A/B
-SOT186
-100A
-ID/100
BUK443
BUK443-100A
BUK443-100B
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74h32
Abstract: MC3021 MC3051 MC3023 MC3151 C3109 MC3029 MC3060 MC3025 MC3001
Text: em o, öö INTEGRATED CIRCUITS FROM MOTOROLA D f f liT f H DDD MC3000 Series 0 to +75°C /M C 74H 00 MC3100 Series ( - 5 5 to +125°C )/M C 54H 00 IS S U E A M T T L III integrated circuits comprise a family of transistor transistor logic designed for general purpose digital applications.
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MC3000
/MC74H00
MC3100
/MC54H00
MC3052/MC3152
74h32
MC3021
MC3051
MC3023
MC3151
C3109
MC3029
MC3060
MC3025
MC3001
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scr 2n4444
Abstract: light operated scr alarm MRD3056 photo transistor mrd3056 2n4444 transistor NPN 2n4444 MRD3050 color sensitive PHOTO TRANSISTOR 2n5060 transistor MRD3055
Text: MRD3050 silicon thru MRD3056 NPN SILICON PHOTO TRANSISTOR . . . designed fo r application in industrial inspection, processing and control, counters, sorters, switching and logic circuits or any design requiring radiation sensitivity, and stable characteristics.
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MRD3050
MRD3056
MRD3050
AN-508,
2N5060
MPS6516
2N4444*
2N4444
scr 2n4444
light operated scr alarm
MRD3056
photo transistor mrd3056
2n4444 transistor NPN
color sensitive PHOTO TRANSISTOR
2n5060 transistor
MRD3055
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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