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    TRANSISTOR 3205 Search Results

    TRANSISTOR 3205 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3205 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    capacitor Microphones

    Abstract: TF202
    Text: UTC TF202 N-CHANNEL SILICON TRANSISTOR CAPACITOR MICROPHONE APPLICATIONS FEATURES *Ultrasmall-sized package permitting TF202 appliedses to be made small and slim. *Especially suited for use in audio,telephone capacitor microphones. *Excellent voltage charactristic.


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    TF202 TF202 OT-113 QW-R210-001 110Hz capacitor Microphones PDF

    2SC3504

    Abstract: No abstract text available
    Text: Ordering number:EN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features Package Dimensions • High fT. · Small reverse transfer capacitance. unit:mm 2006A [2SC3504] B : Base C : Collector E : Emitter


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    EN1438B 2SC3504 2SC3504] SC-51 2SC3504 PDF

    2SC3504

    Abstract: ITR05640 ITR05641 ITR05642 ITR05643
    Text: Ordering number:ENN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features Package Dimensions • High fT. · Small reverse transfer capacitance. unit:mm 2006B [2SC3504] 6.0 5.0 8.5 4.7 14.0 6.0


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    ENN1438B 2SC3504 2006B 2SC3504] 2SC3504 ITR05640 ITR05641 ITR05642 ITR05643 PDF

    12v DC motor

    Abstract: remote speed control of ac motor 100K preset potentiometer DIODE in4005 IN4005 diode remote speed control of dc motor relay 12v dc 100rpm DC motor potentiometer 4k7 1K preset potentiometer
    Text: RS 320-584 PB0224 Issue 4 OEM Speed control board 102 and 313 speed control board Installation and operating instructions 1 Contents Declarations 1.0 Description 2.0 Specification 3.0 Identification 4.0 313FD/D 12V DC motor - externally mounted transistor


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    PB0224 313FD/D IN4005 P600D TIP141 TIPP116 100VA 12v DC motor remote speed control of ac motor 100K preset potentiometer DIODE in4005 IN4005 diode remote speed control of dc motor relay 12v dc 100rpm DC motor potentiometer 4k7 1K preset potentiometer PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE  DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTC’s advanced technology to provide customers with low input capacitance and low


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    K4059 K4059 K4059L-x-AQ3-R K4059G-x-AQ3-R OT-723 QW-R228-001 PDF

    TRANSISTOR C 3205

    Abstract: No abstract text available
    Text: CEM6056 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 15A, RDS ON = 7.5 mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.


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    CEM6056 TRANSISTOR C 3205 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary N-CHANNEL JFET FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE  DESCRIPTION The UTC K4059 is an N-channel JFET, it uses UTC’s advanced technology to provide customers with low input capacitance and low


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    K4059 K4059 K4059G-x-AQ3-R OT-723 QW-R228-001 PDF

    marking 3A sot-89

    Abstract: 3V02 SIVN3205 VN3205
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


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    VN3205 DSFP-VN3205 B022109 marking 3A sot-89 3V02 SIVN3205 PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Others A N 90C00 Series Transistor Arrays 4-circuit • Overview T h e A N 90C 00 series transistor arrays are monolithic ICs which have 4 transistor em itters com m only used. They are provided in 9-pin plastic SIL packages and can improve mounting density by miniaturization of the sets.


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    90C00 50ams AN90C10 600/jtA 500/i PDF

    AN90B21

    Abstract: AN90B10 AN90B20 AN90B22 AN90B01S AN90B60 AN90B00 AN90B00S AN90B20S SO-16D
    Text: Panasonic Others AN90B00/AN90B00S Series Transistor Arrays AN90B00 Series • Overview T he transistor array, the AN9QB0Q and the AN90B00S series, includes the circuits with eight transistors connect­ ed in e m itte r-c o m m o n s ty le s e v e n tra n s is to rs in


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    AN90B00/ AN90B00S AN90B00 18-DIL SO-16D) 18-pin AN90B21 AN90B10 AN90B20 AN90B22 AN90B01S AN90B60 AN90B20S SO-16D PDF

    TRANSISTOR C 3205

    Abstract: 3205 transistor TRANSISTOR BR C 3205 TRANSISTOR 3205
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 ISSUE 1 - APRIL 94_ — - - FEATU RES * 200 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


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    ZTX576 -100hA -160V -10mA* -100mA, 100MHz TRANSISTOR C 3205 3205 transistor TRANSISTOR BR C 3205 TRANSISTOR 3205 PDF

    Untitled

    Abstract: No abstract text available
    Text: j Ordering number: EN 1438B _:_ 2SC3504 No.l438B NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display, Video Output Applications Features . High fT. . Small reverse transfer capacitance. Absolute Haxiaua Ratings at Ta=:25°C Collector to Base Voltage


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    1438B 2SC3504 l438B SC-51 4237AT/3205KI PDF

    transistor BD 522

    Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


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    BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810 PDF

    2SC3504

    Abstract: 1438B
    Text: Ordering num ber: EN 1438B N0.1438B _ 2SC3504 NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display, Video Output Applications Features . High fT . . Small reverse transfer capacitance. Absolute Maxi«um Ratings at Ta=25 C Collector to Base Voltage


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    1438B 2SC3504 2SC3504 1438B PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed


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    NE98108 NE98141 NE981 NE98141 s-117 PDF

    BA 5982

    Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X


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    NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1 PDF

    TRANSISTOR 3F t

    Abstract: y299 MN83875
    Text: Panasonic For Information Equipment MN83875 Liquid Crystal Display Panel Source Driver • Overview The MN83875 converts digital display data from a personal computer or engineering workstation into analog signal volt­ ages for driving thin-film transistor color LCD panels.


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    MN83875 MN83875 Su652 D01543Ã TRANSISTOR 3F t y299 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 - APRIL 94_ FEATURES * 200 Volt V,CEO 1 Amp continuous current P,or 1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT v CBO -200 V Collector-Emitter Voltage


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    001G35S PDF

    j4515

    Abstract: PU3115 PU4515 j451 PU3215 PU4215
    Text: PU3215, PU4215, PU4515 Power Transistor Arrays PU3215, PU4215, PU4515 Silicon NPN Epitaxial Planar Type Package Dimensions 20.5max. Power Amplifier, Switching Complementary Pair with PU3115, PU4115, PU4415 • Features • • • • • • Low collector-em itter saturation voltage VcEisao


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    PU3215, PU4215, PU4515 PU3115, PU4115, PU4415 PU3215: j4515 PU3115 PU4515 j451 PU3215 PU4215 PDF

    MN83876A

    Abstract: lcd panasonic
    Text: Panasonic For Information Equipment MN83876A Liquid Crystal Display Panel Source Driver • Overview The M N 83876A converts digital display data from a per­ sonal com puter or engineering workstation into analog signal voltages for driving thin-film transistor color LCD panels.


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    MN83876A MN83876A i32fl52 GG15441 0Q15442 0G15443 lcd panasonic PDF

    m435

    Abstract: 2042A 2SC3951
    Text: Ordering number: EN 2435A 2SA1536/2SC3951 N0.2435A smiYo PNP/NPN Epitaxial Planar Silicon Transistor i Ultrahigh-Definition CRT Display Video Output Applications A pplications • High-definition CRT display video output, wide-band amp Features -H ig h fr: fr=600M H z


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    2SA1536/2SC3951 600MHz m435 2042A 2SC3951 PDF

    Microwave Oven Inverter Control IC

    Abstract: No abstract text available
    Text: PaiKföonic Others AN6718N Microwave Oven Inverter Control 1C • Overview The AN6718N is an IC for resonance type inverter con­ trol of microwave oven. It can directly control the IGBT Insulated Gate Bipolar Transistor and incorporates the various protective functions.


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    AN6718N AN6718N i32fiS2 Microwave Oven Inverter Control IC PDF

    2SB713

    Abstract: transistor npn 100w amplifier 2SD751
    Text: PANASONIC INDL/ELEK -CIO 15E D • t,=132852 0DlD4tl 1 Silicon Epitaxal Base Mesa Transistor 2SB713 PNP 2SD751 (NPN) TOP-3 Package (See Page 36 For Dimensions) 2SB713 (PNP) Absolute Maximum Ratings (Ta=25°C) Hem Collector-Base Voltage Collector-Emitter Voltage


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    2SB713 2SD751 2SB713 2SD751 transistor npn 100w amplifier PDF