tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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irgp4066d
Abstract: irgp4066 irgp4066d-epbf irgp4066dpbf IRGP4066D-E
Text: PD - 97576 IRGP4066DPbF IRGP4066D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA
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IRGP4066DPbF
IRGP4066D-EPbF
O-247AD
irgp4066d
irgp4066
irgp4066d-epbf
irgp4066dpbf
IRGP4066D-E
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Untitled
Abstract: No abstract text available
Text: PD - 97576 IRGP4066DPbF IRGP4066D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA
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IRGP4066DPbF
IRGP4066D-EPbF
O-247AD
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IRGP4066D-E
Abstract: IRGP4066D-EPBF irgp4066d IRGP4066DPBF
Text: PD - 97576 IRGP4066DPbF IRGP4066D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA
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IRGP4066DPbF
IRGP4066D-EPbF
O-247AD
IRGP4066D-E
IRGP4066D-EPBF
irgp4066d
IRGP4066DPBF
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Untitled
Abstract: No abstract text available
Text: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4708
AO4708
AO4708L
000A/us
0E-06
0E-03
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TSC800
Abstract: No abstract text available
Text: PD - 97577 IRGP4066PbF IRGP4066-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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IRGP4066PbF
IRGP4066-EPbF
O-247AC
O-247AD
TSC800
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irgp4066pbf
Abstract: irgp4066
Text: PD - 97577 IRGP4066PbF IRGP4066-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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IRGP4066PbF
IRGP4066-EPbF
O-247AD
irgp4066pbf
irgp4066
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PDF
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AO4708
Abstract: No abstract text available
Text: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4708
AO4708
AO4708L
Integ50
000A/us
0E-06
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Untitled
Abstract: No abstract text available
Text: PD - 97577 IRGP4066PbF IRGP4066-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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IRGP4066PbF
IRGP4066-EPbF
O-247AD
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PG-TSDSON-8
Abstract: 120P3N
Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications
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BSZ120P03NS3E
IEC61249-2-21
120P3NE
726-BSZ120P03NS3EG
PG-TSDSON-8
120P3N
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120P3N
Abstract: IEC61249-2-21 JESD22 JESD22-A114 BSZ120P03NS3 G d20 diode
Text: BSZ120P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications
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BSZ120P03NS3
IEC61249-2-21
120P3N
120P3N
IEC61249-2-21
JESD22
JESD22-A114
BSZ120P03NS3 G
d20 diode
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transistor C 2240
Abstract: IEC61249-2-21 JESD22 JESD22-A114
Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications
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BSZ120P03NS3E
IEC61249-2-21
120P3NE
transistor C 2240
IEC61249-2-21
JESD22
JESD22-A114
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Untitled
Abstract: No abstract text available
Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications
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BSZ120P03NS3E
IEC61249-2-21
120P3NE
70angerous
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2n3055 motorola
Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,
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1PHX11122C
2n3055 motorola
tip122 tip127 audio amp schematic
transistor equivalent book 2sc2238
IR640
transistor motorola 40411
TRANSISTOR REPLACEMENT GUIDE
ir431
motorola AN485
C2688
2SA1046
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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DSAFRZWS007
Abstract: No abstract text available
Text: NEC SILICON TRANSISTOR 2SA1330 ELECTRON DEVICE HIGH VOLTAGE AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters 2.8 + 0.2 1.5 0.65i8:’i5 • High Voltage: V q e o = —2 0 0 V • High DC Current Gain: hpE = 9 0 to 4 5 0
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2SA1330
2SC3360
J22686
DSAFRZWS007
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marking IAY
Abstract: 2SA1330 2SC3360
Text: NEC SILICON TRANSISTOR 2SA1330 ELECTRON DEVICE HIGH VOLTAGE AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters 2.8 + 0.2 1.5 0.6 5 i8 :’i5 • High Voltage: V q e o = —2 0 0 V • High DC Current Gain: hpE = 9 0 to 4 5 0
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2SA1330
2SC3360
marking IAY
2SA1330
2SC3360
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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TRANSISTOR 3360
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use In line operated switching power supplies in a w ide range of end use applications. This device com bines the latest state of the art
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BUT11AF
221D-02
O-220
15to20in
TRANSISTOR 3360
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BH Rf transistor
Abstract: mrf1150m
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 150 W PEAK. 1 0 2 0 -1 1 5 0 MHz M ICRO W AVE POWER TRAN SISTO R MICROWAVE PULSE POWER TRANSISTOR NPN SILICON . . . designed for Class B and C com m on base a m p lifie r a pplications in short pulse TACAN, IFF, and DME transm itters.
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1150M
MRF1150M
BH Rf transistor
mrf1150m
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mrf1250
Abstract: MRF1250M
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 2 5 0 W PEAK. 1 0 2 0 -1 1 5 0 M H z M IC R O W A V E PO W ER T R A N S IS T O R M ICROW AVE PULSE POWER TRANSISTOR NPN SILICO N d e s ig n e d fo r C lass B a n d C com m on base a m p lifie r a p p lic a tio n s
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MRF1250M
mrf1250
MRF1250M
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