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    TRANSISTOR 3391 F Search Results

    TRANSISTOR 3391 F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3391 F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2n2222a SOT23

    Abstract: 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1
    Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		2N2222ACSM 150mA 2n2222a SOT23 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		2N2222ACSM 150mA PDF

    2N2222ACSM

    Abstract: No abstract text available
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		2N2222ACSM 150mA 2N2222ACSM PDF

    2n2222a SOT23

    Abstract: 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23
    Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		2N2222ACSM 150mA 2n2222a SOT23 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ACSM • High Speed Saturated Switching • Hermetic Surface Mount Package. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage


    Original     		2N2222ACSM 500mW 86mW/Â 150mA PDF

    2N2222ACSM

    Abstract: LE17 transistor 3391 F
    Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ACSM • High Speed Saturated Switching • Hermetic Surface Mount Package. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage


    Original     		2N2222ACSM 500mW 150mA 2N2222ACSM LE17 transistor 3391 F PDF

    2N3393

    Abstract: transistor 2n3391 2N3390 2N3391 2N3391A 2N3392 PN2222N transistor 2n3393 2n3393 equivalent CBVK741B019
    Text: 2N3390 2N3391 2N3391A 2N3392 2N3393 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*


    Original     		2N3390 2N3391 2N3391A 2N3392 2N3393 PN100A 2N3393 transistor 2n3391 2N3390 2N3391 2N3391A 2N3392 PN2222N transistor 2n3393 2n3393 equivalent CBVK741B019 PDF

    2N3391A

    Abstract: transistor 2n3391
    Text: 2N3390 2N3391 2N3391A 2N3392 2N3393 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*


    Original     		2N3390 2N3391 2N3391A 2N3392 2N3393 PN100A 2N3391A transistor 2n3391 PDF

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180 PDF

    buv48 equivalent

    Abstract: v48A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BU V48A SW ITCHMODE II Series NPN Silicon Pow er TVansistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850-1000 VOLTS The BUV48/BUV48A transistors are designed for high-voltage, high-speed, power


    OCR Scan     		BUV48/BUV48A BUV48 buv48 equivalent v48A PDF

    cd401068

    Abstract: CD40106B astable Multivibrator 74 15-V CD40106BH inverter astable Multivibrator 74 CD40106B Types
    Text: 23 HARRIS C D 40106B Types Features: CMOS Hex Schmitt Triggers • Schmitt-trigger action with no external components A — !— T Î > o —- 0 - Ï ■ Hysteresis voltage typ. 0.9 V at V p p “ 5 V , 2.3 V at V q d = 10 V , and 3.5 V at V q d = 15 V


    OCR Scan     		CD40106B 20-Volt 14-lead I/6CD40I06B CD40106BH cd401068 astable Multivibrator 74 15-V CD40106BH inverter astable Multivibrator 74 CD40106B Types PDF

    Transistor BSX 24

    Abstract: TRANSISTOR MPS 3391 TRANSISTOR MPS transistor 9015 transistor MPS 2926 BF 9014 transistor transistor bfy39 Transistor BSX 28 mps 2926 transistor LN9014
    Text: 6091788 MICRO ELECTRONICS CORP_ 82D 00646 D 7 ^ TJ?- '7 S2 DE | bDT17flfl □ OOObMt, b | NO. III u. X TYPE POLARITY Low Level and General Purpose Amplifiers MAXIMUM RATINGS V CE SAT CASE Pd (mW) *C (mA) V CEO (V) min max ‘c (mA) VCE (V) max (V)


    OCR Scan     		bDT17flfl O-92F O-106 O-92A Transistor BSX 24 TRANSISTOR MPS 3391 TRANSISTOR MPS transistor 9015 transistor MPS 2926 BF 9014 transistor transistor bfy39 Transistor BSX 28 mps 2926 transistor LN9014 PDF

    BCM 4359

    Abstract: transistor 4287 AB transistor 3901
    Text: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A


    OCR Scan     		O-237 MELF-002, MELF006 L0T17aa O-181LOW BCM 4359 transistor 4287 AB transistor 3901 PDF

    IC 40106B

    Abstract: CD40106B 40106B CD40106
    Text: 2 HARRIS CD40106B Types Features: CMOS Hex Schmitt Triggers • Schm itt-trigger action w ith no external components High-Voltage Types 20-Volt Rating) ■ Hysteresis voltage (ty p .) 0 .9 V at V q q = 5 V , 2 .3 V at V d d = 10 V , and 3 .5 V at V d d = 15 V


    OCR Scan     		20-Volt CD40106B 14lead 14-lead 40106B IC 40106B CD40106 PDF

    A5004

    Abstract: No abstract text available
    Text: H A -5004 00 HARRIS 100MHz Current Feedback Amplifier January 1989 Features Description • Slew R a te . 1200V/ps The H A -5004 current feedback amplifier is a video/ wideband amplifier optimized for low gain applications. The


    OCR Scan     		100MHz 65MHz 19mils 480pm) A5004 PDF

    2N3397

    Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391


    OCR Scan     		2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3397 n3860 PDF

    BA 5104

    Abstract: transistor S104 pr 5104 Q HA 174 s104 transistor HA 103 s2903 HA-5102
    Text: 4GE B HARRIS SEMICOND SECTOR 4305271 003203? 1 • HAS. ■ T -n -o k -z x ¡Ti HARRIS H A -5 1 0 2 /0 4 /1 2 /1 4 Low Noise High Performance Operational Amplifiers A u g u s t 1991 Features Applications • Low Noise . 4.3nV/v/H z


    OCR Scan     		4305E71 G032G37 HA-5102/04/12/14 60MHz HA-5102/04/12/14, 20Wns 60MHz HA-5112/14) HA1-5104 HA2-5102/5112 BA 5104 transistor S104 pr 5104 Q HA 174 s104 transistor HA 103 s2903 HA-5102 PDF

    motorola multiplier

    Abstract: PT4215 Coilcraft N2881-A
    Text: MOTOROLA MC33261 MC34261 SEMICONDUCTOR! TECHNICAL DATA Advance Information Power Factor Controller The MC34261, MC33261 series are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off-line power converter applications. These integrated circuits feature an


    OCR Scan     		MC33261 MC34261 MC34261, MC33261 03DPCG5 CMT3-28-2 9000C motorola multiplier PT4215 Coilcraft N2881-A PDF

    A5025

    Abstract: HA5025IB
    Text: H A5025 ¡K l HARRIS S E M I C O N D U C T O R M Quad, 125MHz Video Current Feedback Amplifier November 1996 Description Features • W ide Unity Gain B a n d w id th . 125MHz • Slew R a t e . 475V/|iS


    OCR Scan     		125MHz A5025 HA5025 HA5025 483nm A5025 HA5025IB PDF

    Untitled

    Abstract: No abstract text available
    Text: HA5025 H a r r is S E M I C O N D U C T O R # Quad, 125MHz Video Current Feedback Amplifier November 1996 Features Description • Wide Unity Gain B andw idth. 125MHz • Slew R a te . 475V/ns


    OCR Scan     		HA5025 125MHz 125MHz 75V/ns 800nV HA5025 3130nm 483nm PDF

    tda 3388

    Abstract: PT4215 PT2510 MOTOROLA TRANSISTOR 974
    Text: MOTOROLA MC33261 MC34261 SEMICONDUCTOR TECHNICAL DATA Advance Information Power Factor Controller POWER FACTOR CONTROLLER The MC34261, MC33261 series are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in


    OCR Scan     		MC33261 MC34261 MC34261, T3-28-2 9000C MC33261 tda 3388 PT4215 PT2510 MOTOROLA TRANSISTOR 974 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 H a r r i s H A - 5 1 0 2 / 0 4 / 1 2 / 1 4 Low Noise High Perform ance O perational Am plifiers August 1 9 9 1 Features A pplications • Low Noise . 4.3nV/v/Hz • W ide Bandwidth . 8MHz Compensated)


    OCR Scan     		60MHz 480pm) HA3-5102/5112 HA3-5104/511 HA7-5102/5112 HA9P5102/5112 HA9P5104/5114 PDF

    Untitled

    Abstract: No abstract text available
    Text: g MOTOROLA M C34163 MC33163 Power Switching Regulators The MC34163 series are monolithic power switching regulators that contain the primary functions required fo rd c-to -d c converters. This series is specifically designed to be incorporated in step-up, step-down, and


    OCR Scan     		C34163 MC33163 MC34163 1N5822 D017205 PDF

    mc34163

    Abstract: cd 3403
    Text: M MOTOROLA MC34163 MC33163 Power Switching Regulators The MC34163 series are monolithic power switching regulators that contain the primary functions required for d c-to -d c converters. This series is specifically designed to be incorporated in step-up, step-down, and


    OCR Scan     		MC34163 cd 3403 PDF