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    TRANSISTOR 342 PF Search Results

    TRANSISTOR 342 PF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 342 PF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 342 G

    Abstract: buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor
    Text: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω


    Original     		PDF O-218 C67078-S3135-A2 transistor 342 G buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor

    C67078-S3135-A2

    Abstract: transistor 342 G BUZ342
    Text: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω


    Original     		PDF O-218 C67078-S3135-A2 C67078-S3135-A2 transistor 342 G BUZ342

    GA200SA60SP

    Abstract: No abstract text available
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 2002/95/EC 18-Jul-08 GA200SA60SP

    CGC SWITCH

    Abstract: transistor 342 pf GA200SA60SP
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 CGC SWITCH transistor 342 pf GA200SA60SP

    smps tig welding

    Abstract: transistor 342 G GA200SA60SP
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 2002/95/EC 18-Jul-08 smps tig welding transistor 342 G GA200SA60SP

    GA200SA60SP

    Abstract: GA200SA60S
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 E78996 2002/95/EC 11-Mar-11 GA200SA60SP GA200SA60S

    GA200SA60SP

    Abstract: smps tig welding transistor 342 G
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 2002/95/EC 18-Jul-08 GA200SA60SP smps tig welding transistor 342 G

    Untitled

    Abstract: No abstract text available
    Text: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available


    Original     		PDF VS-GA250SA60S VS-GA200SA60SP OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    VN45350T

    Abstract: VN0603T 2N7001 VN45350 vn4012B
    Text: H Siliconix incorporated N-CHANNEL V BR DS PART# (V) DS(ON) VGS(th) tON Ciss (V) (ns) (PF) ID (mA) PD (H) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 30 30 10 10 10 10 10 10 38 38 35 35 16 16 35 35 0.85 0.85 0.46 0.46 0.23 0.23 0.40 0.40 2 2 2 2 2 2 2 2 3.0 3.0 2.5 2.5


    Original     		PDF 14-PIN VQ1001J VQ1001P VQ1004P VQ1004J VQ1000J VQ1000P VQ1006P VQ1006J OT-23 VN45350T VN0603T 2N7001 VN45350 vn4012B

    J645

    Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
    Text: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF 2010B UPB2010B 30dBc 130mA 100oC 175oC J645 J626 transistor J626 ultrarf UPB2010B J626 Transistor

    2N5643

    Abstract: No abstract text available
    Text: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in


    Original     		PDF 2N5643 30Vdc. 2N5643

    buz 342 G

    Abstract: transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog
    Text: SIEMENS BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Ultra low on-resistance • 175°C operating temperature Type BUZ 342 Vds 50 V h 60 A flbS on Package Ordering Code 0.01 Q TO-218 AA C67078-S3135-A2


    OCR Scan     		PDF O-218 C67078-S3135-A2 O-218AA buz 342 G transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog

    Untitled

    Abstract: No abstract text available
    Text: BUZ 342 Infine on t*c h o ologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated •d v /d / rated 1 VPT051SB 2 J • Ultra low on-resistance • 175"C operating temperature D G Type BUZ 342 h Vds 60 A 50 V f lDS on 0.01 n


    OCR Scan     		PDF O-218AA C67078-S3135-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e October 1990 FEATURES • Direct interface to C-M O S, TTL, etc., due to low threshold voltage • High speed switching • No secondary breakdown BSN 274/BSN 274A


    OCR Scan     		PDF 274/BSN 3hD30 BSN274/BSN274A bb53T31 003b031

    Untitled

    Abstract: No abstract text available
    Text: KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri*10kQ, R2*47kQ) • Complement to KSR2006 ABSOLUTE MAXIMUM RATINGS {Tft=25t:)


    OCR Scan     		PDF KSR1006 KSR2006

    TRANSISTOR D 471

    Abstract: KSR1205 KSR2205 J500 INC7-35-H1ME
    Text: SA M S U N G SEM IC ONDUCTOR INC7-36-1114E D | 71fc.mM2 0007071 3 | KSR1205 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor ( R ^ ^ K O , R,=10Kfl)


    OCR Scan     		PDF INC7-35-H1ME D0D7071 KSR1205 KSR2205 O-92S 71bm42 TRANSISTOR D 471 KSR2205 J500

    A 564 transistor

    Abstract: 3181 R33 transistor A 564
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4227 2SC4227 SC-70 A 564 transistor 3181 R33 transistor A 564

    Untitled

    Abstract: No abstract text available
    Text: BS107A y V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and


    OCR Scan     		PDF BS107A

    2SD1864

    Abstract: No abstract text available
    Text: 2SD1864 Transistor, NPN Features Dimensions Units : mm • a v a ila b le in A T V T V 2 p a c k a g e • lo w c o lle c to r s a tu ra tio n v o lta g e , ty p ic a lly V CE(sat) = 0.5 V at lc / l B = 2 A /0.2 A • c o m p le m e n ta ry p a ir w ith 2 S B 1 2 4 3


    OCR Scan     		PDF 2SD1864 2SD1864

    Untitled

    Abstract: No abstract text available
    Text: KSA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Complement to KSC945 • Collector-Base Voltage V TO-92 cbo = -8 °v ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF KSA733 KSC945 Curr100Hz,

    Untitled

    Abstract: No abstract text available
    Text: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FR EQ U EN C Y POW ER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB1015 A B S O LU T E MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage


    OCR Scan     		PDF KSD1406 KSB1015

    HT1 SOT363

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11 FEATURES • T ransistors w ith built-in bias resistors R1 and R2 typ. 10 k£2 each • No m utual interference betw een the transistors 6 • S im plification of circu it design


    OCR Scan     		PDF PUMH11 SC-88) SC-88 OT363 HT1 SOT363

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.


    OCR Scan     		PDF BUZ45A_ bb53T31 0014bS7 T-39-13 T-39-13 D014bST BUZ45A

    Untitled

    Abstract: No abstract text available
    Text: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220F • Low Collector Emitter Saturation Voltage • Complement to KSB1015 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage


    OCR Scan     		PDF KSD1406 KSB1015 O-220F