8L AA
Abstract: 9v smd transistor smd 4401 NPN Switching Transistor 10MW CS2516 pulse stretcher circuit diagram smd transistor 8L stretcher pulse stretcher circuit ct 60 transistor
Text: CS2516 CS2516 Pulse-Load Battery Monitor Description The CS2516 is designed for use in battery powered medical, security, or environmental systems where prior notification of impending power source failure is a requirement. The IC effectively provides continuous monitoring of battery condition by pulsesampling the system voltage at predetermined intervals. Low standby current permits unswitched connection to
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CS2516
CS2516
MS-001
CS2516KN8
CS2516KD8
CS2516KDR8
8L AA
9v smd transistor
smd 4401 NPN Switching Transistor
10MW
pulse stretcher circuit diagram
smd transistor 8L
stretcher
pulse stretcher circuit
ct 60 transistor
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CS3972
Abstract: CS3972YDW16 CS3972YDWR16 CS3972YN8 CS3972YT5 MS-001 MS-013
Text: CS3972 CS3972 1.25A High Efficiency Switching Regulator Features Description The CS3972 is a 1.25A, 60V, current mode, high efficiency, switching regulator circuit. It can be configured in buck, boost, forward, isolated and non-isolated topologies, using a single-ended switch.
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CS3972
CS3972
trimm540)
CS3972YN8
CS3972YDW16
CS3972YDWR16
CS3972YT5
O-220
CS3972YDW16
CS3972YDWR16
CS3972YN8
CS3972YT5
MS-001
MS-013
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J406
Abstract: TRANSISTOR J406 TRANSISTOR j412 ultrarf UPB2025B J245
Text: URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-50 UPB2025B 25W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM,
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2025B
UPB2025B
30dBc
250mA
100oC
175oC
J406
TRANSISTOR J406
TRANSISTOR j412
ultrarf
UPB2025B
J245
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MS001
Abstract: CS3972 CS3972YDW16 CS3972YDWR16 CS3972YN8 CS3972YT5 CS3972YTHA5 CS3972YTVA5 MS-001 MS-013
Text: CS3972 CS3972 1.25A High Efficiency Switching Regulator Features Description The CS3972 is a 1.25A, 60V, current mode, high efficiency, switching regulator circuit. It can be configured in buck, boost, forward, isolated and non-isolated topologies, using a single-ended switch.
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CS3972
CS3972
CS3972YN8
CS3972YDW16
CS3972YDWR16
CS3972YT5
CS3972YTVA5
CS3972YTHA5
O-220
MS001
CS3972YDW16
CS3972YDWR16
CS3972YN8
CS3972YT5
CS3972YTHA5
CS3972YTVA5
MS-001
MS-013
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA804T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The 2SC4571 has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1
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PA804T
2SC4571
PA804T-T1
2SC4571)
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APA075
Abstract: CCGA FBGA-484 datasheet APA1000 APA150 APA300 APA450 APA600 APA750 FG256
Text: Product Brief TM ProASICPLUS Flash Family FPGAs Features and Benefits • High Capacity High Performance Routing Hierarchy Commercial and Industrial • • • • • • • 75,000 to 1 Million System Gates 27 k to 198 kbits of Two-Port SRAM 66 to 712 User I/Os
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32-Bit
5172161PB-16/10
APA075
CCGA
FBGA-484 datasheet
APA1000
APA150
APA300
APA450
APA600
APA750
FG256
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Amplifier with transistor BC548
Abstract: AUDIO Amplifier with transistor BC548 1315 TRANSISTOR transistor 1151 transistor transistor 2n5401 TDA7050 BC327 NPN transistor datasheet BC547 driver BUX86 TRANSISTOR
Text: Philips Semiconductors Semiconductors for Wired Telecom Systems Index Types added to the range since the last issue of data handbook IC03a are shown in bold print. The types showing an “x”instead of a page number, are not printed in the book, but appear in the selection guides
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IC03a
2N5400;
2N5401
2N5550;
2N5551
2N7000
2N7002
BC327;
BC327A;
BC328
Amplifier with transistor BC548
AUDIO Amplifier with transistor BC548
1315 TRANSISTOR
transistor 1151
transistor
transistor 2n5401
TDA7050
BC327 NPN transistor datasheet
BC547 driver
BUX86 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort BF721T1 PNP Silicon Transistor ON Semiconductors Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –300 Vdc Collector-Base Voltage VCBO –300 Vdc Collector-Emitter Voltage VCER –300 Vdc Emitter-Base Voltage
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BF721T1
318E-04,
O-261AA)
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BUK444
Abstract: BUK444-800A BUK444-800B YA11
Text: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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7110fl2b
BUK444-800A/B
OT186
BUK444
-800A
-800B
BUK444-800A
BUK444-800B
YA11
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VCE(sat) = - 0.32V (Typ.) (IC = - 500mA, IB = - 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C)
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2SA1356
500mA,
2SC3419
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2SA1356
Abstract: 2SC3419 2sc341 2SA135
Text: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB = -50m A ) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)
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2SA1356
500mA,
2SC3419
2SA1356
2sc341
2SA135
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A1356 transistor
Abstract: A1356 2SA1356 2SC3419
Text: TOSHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. • 8.3MAX. . 5.8 Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB =-50m A ) High Collector Power Dissipation : P0 = 1.2W(Ta = 25°C)
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2SA1356
500mA,
2SC3419
A1356 transistor
A1356
2SA1356
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N03E
Abstract: HBC2500 USE OF TRANSISTOR AMP017 opamp 555 3-input xnor Analog Devices Opamp transistor 2955 AMP016 op-amp- 356
Text: HBC2500 H A R R IS S E M I C O N D U C T O R 3fim B iM O S-E A nalog/D igital Library February 1992 Features • Description Cost-Effective 3 Micron BiCMOS Technology Integrates Up to 2000 Gates and 100 Op Amps HBC2500 is a mixed-signal analog and digital BICMOS
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HBC2500
HBC2500
N03E
USE OF TRANSISTOR
AMP017
opamp 555
3-input xnor
Analog Devices Opamp
transistor 2955
AMP016
op-amp- 356
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TA2761
Abstract: indiana general ferrites RCA-40608 HP608D transistor v2w 40608 CM 40608 field strength meter RCA Solid State Power Transistor BALLANTINE
Text: File No. 356 [JUCBZTD ^ P o w e r T r a n s is to rs Solid State Division 40608 RCA-40608 is an ep itax ial silico n n-p-n p lan ar tra n s is tor. I t is e s p e c ia lly designed for operation a s a C la s s A, wide-band power am plifier in VHF circu its.
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RCA-40608
TA2761
100fi.
I237R2
92CS-22857
TA2761
indiana general ferrites
HP608D
transistor v2w
40608 CM
40608
field strength meter
RCA Solid State Power Transistor
BALLANTINE
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Untitled
Abstract: No abstract text available
Text: Central“ CXT3019 sem iconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The C EN TR A L SEM ICONDUCTOR CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose
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CXT3019
CXT3019
OT-89
100jiA
15OmA,
500mA,
150mA,
150mA
500mA
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Untitled
Abstract: No abstract text available
Text: BS250 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • Low RpSon D irect interface to C MOS
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BS250
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE ObE D bbS3T31 0DlS7Qfl =1 J BF550 V r - 3/-/5- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.
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bbS3T31
BF550
bb53T31
DQ1S71Q
T-31-15
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bfy90
Abstract: BFy 90 transistor DIN 41876 bfy 90
Text: BFY90 NPN Transistor for antenna amplifiers B FY 90 is an epitaxial N P N silicon planar RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general application up into the G Hz range, e.g. in antenna and RF amplifiers.
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BFY90
BFY90
Q62702-F297
BFy 90 transistor
DIN 41876
bfy 90
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Untitled
Abstract: No abstract text available
Text: KSR1112 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47Kf!) • Complement to KSR2112 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR1112
OT-23
KSR2112
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE X7 DbE D b b S B ' m aoisaii o RZ1214B35Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.
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RZ1214B35Y
bb53T31
7Z9421S
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BUZ211
Abstract: No abstract text available
Text: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.
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BUZ211
T-si-13
bbS3131
D014b
T-39-13
BUZ211_
0014b74
BUZ211
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PZ2327B15U
Abstract: No abstract text available
Text: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711DflSb DDMb4flfl QM3 ■ P H I N 7 ^ 3 3 -0 ? MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.
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PZ2327B15U
711DflSt
711dfleb
t-33-09
7110fl5b
PZ2327B15U
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Untitled
Abstract: No abstract text available
Text: MARKTECH INTERNATIONAL IflE D S7TìbSS 000QM51 4 SLOTTED SWITCH MTSS8040 INFRARED LED+PHOTO TRANSISTOR _ii •“ • i APPLICATIONS ÍJQ • OPTICAL SWITCH • SHAFT POSITION AND VELOCITY SENSOR 1. 2. 3. 4. FEATURES • Both chips face each other across a 0.118 inch air gap.
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000QM51
MTSS8040
00006CH
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BUK455-500B
Abstract: T0220AB
Text: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK455-500B
T0220AB
711DflEb
BUK455-500B
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