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    TRANSISTOR 359 A K Search Results

    TRANSISTOR 359 A K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 359 A K Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a1359

    Abstract: 2tj transistor 2SA1359 2SC3422 cd 3301
    Text: TOSHIBA 2SA1359 2 S A 1 359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER. LO W SPEED SWITCHING. • 8.3 MAX. • • 0 z.i± o .i 5.8 Suitable for Output Stage of 5 Watts Car Radio and Car Stereo.


    OCR Scan     		2SA1359 2SC3422. 961001EAA2' a1359 2tj transistor 2SA1359 2SC3422 cd 3301 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 359 AUDIO FREQUENCY POWER AMPLIFIER. LOW SPEED SWITCHING. U nit in mm 8.3M AX. 0 S .1 + C U &8 • Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. ä ' • Good Linearity of h p g.


    OCR Scan     		2SA1359 2SC3422. PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD1943 NPN EPITAXIAL SILICON TRANSISTOR HIGH /£?POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit Collector Base Voltage VcBO 80 V Collector Emitter Voltage VcEO 60 V Emitter Base Voltage V eb o 8 V Collector Current lc 3 A Collector Dissipation TA=25'C


    OCR Scan     		KSD1943 PDF

    BP317

    Abstract: PMBT5401 PMBT5550
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low current max. 300 mA


    Original     		M3D088 PMBT5401 PMBT5550. MAM256 SCA63 115002/00/03/pp8 BP317 PMBT5401 PMBT5550 PDF

    transistor J9

    Abstract: No abstract text available
    Text: KSD1943 NPN EPITAXIAL SILICON TRANSISTOR HIGH j9 POWER TRANSISTOR TO -220 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit VcBO 80 60 8 3 40 1 50 —5 5 ~ 1 50 V V V A W °C °C Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage


    OCR Scan     		KSD1943 transistor J9 PDF

    PDTA123JE

    Abstract: PDTC123JE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Aug 03 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 and 47 kΩ


    Original     		M3D173 PDTC123JE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA123JE PDTC123JE SC-75 PDF

    PDTA124XE

    Abstract: PDTC124XE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification Supersedes data of 1998 Nov 25 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ


    Original     		M3D173 PDTA124XE MAM345 SC-75) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).


    Original     		M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8 PDF

    PDTA124XE

    Abstract: PDTC124XE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ


    Original     		M3D173 PDTC124XE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75 PDF

    SC88 SOT363 plastic package Ht9 MARKING CODE

    Abstract: MARKING ht9 sot363 MARKING CODE ht9 BP317 sot363 marking DATE code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH9 NPN resistor-equipped double transistor Product specification 1999 May 06 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • Transistors with built-in bias resistors R1 typ. 10 kΩ


    Original     		MBD128 MAM342 115002/00/01/pp8 SC88 SOT363 plastic package Ht9 MARKING CODE MARKING ht9 sot363 MARKING CODE ht9 BP317 sot363 marking DATE code PDF

    PDTC143XE

    Abstract: PDTA143XE SC-75 PDTA143 PDTA143X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ


    Original     		M3D173 PDTC143XE MAM346 SC-75; OT416) 115002/00/02/pp8 PDTC143XE PDTA143XE SC-75 PDTA143 PDTA143X PDF

    BP317

    Abstract: MMBTA42 MMBTA92 254-D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN


    Original     		M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8 BP317 MMBTA42 MMBTA92 254-D PDF

    PDTC114YE

    Abstract: SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ and 47 kΩ


    Original     		M3D173 PDTC114YE 115002/00/03/pp8 PDTC114YE SC-75 PDF

    MMBTA92

    Abstract: BP317 MMBTA42
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN


    Original     		M3D088 MMBTA92 MMBTA42. MAM256 603506/01/pp8 MMBTA92 BP317 MMBTA42 PDF

    PDTA143XE

    Abstract: SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ


    Original     		M3D173 PDTA143XE MAM345 SC-75 OT416) SCA63 115002/00/01/pp8 PDTA143XE SC-75 PDF

    PDTC123ET

    Abstract: marking code 10 sot23 PDTA123JT
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES • Built-in bias resistors typ 2.2 kΩ


    Original     		M3D088 PDTA123JT MAM100 115002/01/pp8 PDTC123ET marking code 10 sot23 PDTA123JT PDF

    PDTA124EEF

    Abstract: SC-89 BP317 PDTA124E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING • Built-in bias resistors R1 and R2 typical 22 kΩ each


    Original     		M3D425 PDTA124EEF 613514/01/pp8 PDTA124EEF SC-89 BP317 PDTA124E PDF

    BP317

    Abstract: MMBT2222A PMBT2907A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).


    Original     		M3D088 MMBT2222A PMBT2907A. MAM255 603506/01/pp8 BP317 MMBT2222A PMBT2907A PDF

    transistor circuit

    Abstract: 357 photo
    Text: O K I electronic components OC33 PHOTO COUPLER GENERAL DESCRIPTION The OC33 is a combination of a light emission diode GaAs LED and a light receiving silicon photo transistor. FEATURES • Current transfer ratio: 20% min. • Isolation voltage: 1,000 V min.


    OCR Scan     		2x10a 5x10a 5x102 transistor circuit 357 photo PDF

    KSR1002

    Abstract: KSR2002 74115
    Text: S A M S U N G SEMICONDUCTOR INC mE KSR2002 D 7Tb4142 □ 00706*1 0 | PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T-37- >3 (Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built In bias Reslstor(R, = 10Kff, R, = 10KÍ1)


    OCR Scan     		0070fl KSR2002 10Kil) KSR1002 KSR1002 74115 PDF

    BP317

    Abstract: PMSTA42 PMSTA43 PMSTA92 PMSTA93
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors Product specification Supersedes data of 1997 Jun 19 1999 May 21 Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43


    Original     		M3D187 PMSTA42; PMSTA43 OT323 PMSTA92 PMSTA93. PMSTA42 BP317 PMSTA42 PMSTA43 PMSTA93 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSR1113 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itch in g circuit, Inverter. Interlace circuit Driver circuit • Built in b ia s R e sis to r(R ,= 2.2K11, R, = 47KS!) • C om plem ent to K S R 2 1 1 3 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		KSR1113 100mA, 100/4A PDF

    BLT13

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor Preliminary specification File under Discrete Semiconductors, SC08b 1996 Apr 12 Philips Semiconductors Preliminary specification UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency


    Original     		BLT13 SC08b OT96-1 MAM22P SCDS48 127061/1200/02/pp8 BLT13 BP317 PDF

    358 SMD transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


    Original     		BLT80 BLT80 OT223 MAM043 cir2724825 SCDS48 127061/1200/02/pp12 771-BLT80-T/R 358 SMD transistor PDF