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    TRANSISTOR 359 A K Search Results

    TRANSISTOR 359 A K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 359 A K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BP317

    Abstract: PMBT5401 PMBT5550
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low current max. 300 mA


    Original     		PDF M3D088 PMBT5401 PMBT5550. MAM256 SCA63 115002/00/03/pp8 BP317 PMBT5401 PMBT5550

    PDTA123JE

    Abstract: PDTC123JE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Aug 03 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 and 47 kΩ


    Original     		PDF M3D173 PDTC123JE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA123JE PDTC123JE SC-75

    PDTA124XE

    Abstract: PDTC124XE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification Supersedes data of 1998 Nov 25 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ


    Original     		PDF M3D173 PDTA124XE MAM345 SC-75) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).


    Original     		PDF M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8

    PDTA124XE

    Abstract: PDTC124XE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ


    Original     		PDF M3D173 PDTC124XE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75

    SC88 SOT363 plastic package Ht9 MARKING CODE

    Abstract: MARKING ht9 sot363 MARKING CODE ht9 BP317 sot363 marking DATE code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH9 NPN resistor-equipped double transistor Product specification 1999 May 06 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • Transistors with built-in bias resistors R1 typ. 10 kΩ


    Original     		PDF MBD128 MAM342 115002/00/01/pp8 SC88 SOT363 plastic package Ht9 MARKING CODE MARKING ht9 sot363 MARKING CODE ht9 BP317 sot363 marking DATE code

    PDTC143XE

    Abstract: PDTA143XE SC-75 PDTA143 PDTA143X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ


    Original     		PDF M3D173 PDTC143XE MAM346 SC-75; OT416) 115002/00/02/pp8 PDTC143XE PDTA143XE SC-75 PDTA143 PDTA143X

    PDTC114EE

    Abstract: PDTA114EE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ each


    Original     		PDF M3D173 PDTC114EE 115002/00/04/pp8 PDTC114EE PDTA114EE SC-75

    PDTA143XE

    Abstract: SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ


    Original     		PDF M3D173 PDTA143XE MAM345 SC-75 OT416) SCA63 115002/00/01/pp8 PDTA143XE SC-75

    PDTC123ET

    Abstract: marking code 10 sot23 PDTA123JT
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES • Built-in bias resistors typ 2.2 kΩ


    Original     		PDF M3D088 PDTA123JT MAM100 115002/01/pp8 PDTC123ET marking code 10 sot23 PDTA123JT

    PDTA124EEF

    Abstract: SC-89 BP317 PDTA124E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING • Built-in bias resistors R1 and R2 typical 22 kΩ each


    Original     		PDF M3D425 PDTA124EEF 613514/01/pp8 PDTA124EEF SC-89 BP317 PDTA124E

    BP317

    Abstract: MMBT2222A PMBT2907A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).


    Original     		PDF M3D088 MMBT2222A PMBT2907A. MAM255 603506/01/pp8 BP317 MMBT2222A PMBT2907A

    BP317

    Abstract: PMSTA42 PMSTA43 PMSTA92 PMSTA93
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors Product specification Supersedes data of 1997 Jun 19 1999 May 21 Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43


    Original     		PDF M3D187 PMSTA42; PMSTA43 OT323 PMSTA92 PMSTA93. PMSTA42 BP317 PMSTA42 PMSTA43 PMSTA93

    BLT13

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor Preliminary specification File under Discrete Semiconductors, SC08b 1996 Apr 12 Philips Semiconductors Preliminary specification UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency


    Original     		PDF BLT13 SC08b OT96-1 MAM22P SCDS48 127061/1200/02/pp8 BLT13 BP317

    ISO 11452-5

    Abstract: ISO 11452-5 stripline ka band sensor wheel speed sensor 6838 magnetic sensor MBL226
    Text: DISCRETE SEMICONDUCTORS DATA SHEET KMI18/2 Integrated rotational speed sensor Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Integrated rotational speed sensor KMI18/2 FEATURES PINNING • Open collector output PIN SYMBOL


    Original     		PDF KMI18/2 KMI18/2 613520/01/pp12 ISO 11452-5 ISO 11452-5 stripline ka band sensor wheel speed sensor 6838 magnetic sensor MBL226

    transistor npn U8

    Abstract: 2108 npn transistor marking code 10 sot23 Philips MARKING CODE BCX17 BCX19 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX19 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor BCX19 FEATURES PINNING


    Original     		PDF M3D088 BCX19 BCX17. MAM255 SCA63 115002/00/03/pp8 transistor npn U8 2108 npn transistor marking code 10 sot23 Philips MARKING CODE BCX17 BCX19 BP317

    Transistor A 471

    Abstract: 2PB710AR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PB710A PNP general purpose transistor Product specification Supersedes data of 1999 Apr 23 1999 May 31 Philips Semiconductors Product specification PNP general purpose transistor 2PB710A FEATURES PINNING


    Original     		PDF M3D114 2PB710A SC-59 2PD602A. 2PB710AQ 2PB710AS MAM322 2PB710AR 115002/06/pp8 Transistor A 471 2PB710AR

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD602A NPN general purpose transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistor 2PD602A FEATURES PINNING


    Original     		PDF M3D114 2PD602A SC-59 2PB710A. 2PD602AQ 2PD602AS MAM321 2PD602AR SCA63

    a1359

    Abstract: 2tj transistor 2SA1359 2SC3422 cd 3301
    Text: TOSHIBA 2SA1359 2 S A 1 359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER. LO W SPEED SWITCHING. • 8.3 MAX. • • 0 z.i± o .i 5.8 Suitable for Output Stage of 5 Watts Car Radio and Car Stereo.


    OCR Scan     		PDF 2SA1359 2SC3422. 961001EAA2' a1359 2tj transistor 2SA1359 2SC3422 cd 3301

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 359 AUDIO FREQUENCY POWER AMPLIFIER. LOW SPEED SWITCHING. U nit in mm 8.3M AX. 0 S .1 + C U &8 • Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. ä ' • Good Linearity of h p g.


    OCR Scan     		PDF 2SA1359 2SC3422.

    transistor circuit

    Abstract: 357 photo
    Text: O K I electronic components OC33 PHOTO COUPLER GENERAL DESCRIPTION The OC33 is a combination of a light emission diode GaAs LED and a light receiving silicon photo transistor. FEATURES • Current transfer ratio: 20% min. • Isolation voltage: 1,000 V min.


    OCR Scan     		PDF 2x10a 5x10a 5x102 transistor circuit 357 photo

    Untitled

    Abstract: No abstract text available
    Text: KSR1113 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itch in g circuit, Inverter. Interlace circuit Driver circuit • Built in b ia s R e sis to r(R ,= 2.2K11, R, = 47KS!) • C om plem ent to K S R 2 1 1 3 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF KSR1113 100mA, 100/4A

    C0U15

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC 42E D KS555 • 7^4142 DGQ'Ì314 2 ■ SM6 K CMOS INTEGRATED CIRCUIT CMOS SINGLE TIMERThe KS555 is a CMOS tim er with improved performance over a standard bipolar one. Due to its high-impedance inputs, it is capable o f producing accurate tim e delays


    OCR Scan     		PDF KS555 KS555 C0U15

    2SK1359

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1359 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 359 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.)


    OCR Scan     		PDF 2SK1359 2SK1359