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    TRANSISTOR 388 Search Results

    TRANSISTOR 388 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 388 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC5005

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    2SC5005 2SC5005 PDF

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2 PDF

    NEC JAPAN 282 110 01

    Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4570 2SC4570 SC-70) 2SC4570-T1 NEC JAPAN 282 110 01 NEC 2561 TYP 513 309 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261 PDF

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2 PDF

    2SJ626

    Abstract: 5M15A nec 556
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)


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    2SJ626 2SJ626 5M15A nec 556 PDF

    marking XN

    Abstract: nec 556
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)


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    2SJ626 2SJ626 marking XN nec 556 PDF

    8ch pnp DARLINGTON TRANSISTOR ARRAY

    Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
    Text: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array


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    TD62S× TD62M× TD62C× TB62/TD/ULN/ULQ D62598AP TD62601P TD62602P TD62603P TD62604P TD62703P 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c PDF

    TD2400

    Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
    Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


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    2SC5007 2SC5007 TD2400 transistor zo 607 2SC5007-T1 NEC 1555 AK-804 164-1-1 PDF

    xl 6009

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV920 UHF power transistor Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors 1995 Apr 10 Philips Semiconductors Product specification UHF power transistor BLV920 FEATURES DESCRIPTION


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    BLV920 SC08a BLV920 OT171 SCD38 123052/1500/01/pp12 xl 6009 PDF

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 BFT92W transistor Bft92 NT 407 F power transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES


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    BFT92W OT323 BFT92W BFT92. MBC870 SCD31 123065/1500/01/pp12 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 transistor Bft92 NT 407 F power transistor PDF

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 BFT92W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES


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    BFT92W OT323 BFT92W BFT92. MBC870 SCD31 123065/1500/01/pp12 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 PDF

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


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    BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 PDF

    2222 031 capacitor philips 2222 424

    Abstract: 2222 031 capacitor philips BLF247B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification Philips Semiconductors August 1994 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION • High power gain


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    BLF247B MAM098 OT262A1 SCD34 846915/1500/01/pp16 2222 031 capacitor philips 2222 424 2222 031 capacitor philips BLF247B PDF

    MJE15020

    Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment


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    MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 PDF

    xl 6009

    Abstract: MLC660 MLC662 L6 PHILIPS 4894 BLV910
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and


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    BLV910 OT171 SCD38 123052/1500/01/pp12 xl 6009 MLC660 MLC662 L6 PHILIPS 4894 BLV910 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T2 PDF

    2sc4571

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4570 2SC4570 SC-70) 4570-T PACK878 PDF

    transistor 1211

    Abstract: transistor su 312 transistor zo 109
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    2SC5005 2SC5005 Collect69 transistor 1211 transistor su 312 transistor zo 109 PDF

    SN 4931

    Abstract: 2sc 3476 2SC 1885 SN 4931 N
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


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    2SC5005 2SC5005 SN 4931 2sc 3476 2SC 1885 SN 4931 N PDF

    transistor NEC B 617

    Abstract: nec. 5.5 473
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


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    2SC5007 2SC5007 transistor NEC B 617 nec. 5.5 473 PDF

    transistor k 385

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK456-800A/B BUK456 -800A -800B T0220AB transistor k 385 PDF