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    TRANSISTOR 3CA Search Results

    TRANSISTOR 3CA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3CA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3CA1837

    Abstract: 3DA4793
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 3CA1837 TRANSISTOR PNP FEATURES . High Transition Frequency : fT=70MHZ(Typ) . Complementary to 3DA4793 . Collector Power Dissipation PCM : 2W (Tamb=25℃)


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    PDF O-220F 3CA1837 70MHZ 3DA4793 -230V, -100mA -500mA, -50mA 3DA4793

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DA4793 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES . High Transition Frequency : fT=100MHZ(Typ) . Complementary to 3CA1837 . Collector Power Dissipation PCM : 2W (Tamb=25℃)


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    PDF O-220F 3DA4793 100MHZ 3CA1837 100mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3CA753 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power dissipation 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


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    PDF O-251/TO-252-2L 3CA753 O-251 O-252-2L -10mA -500mA -200mA -30mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 3CA1837 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 3DA4793 z Collector Power Dissipation 2. COLLECTOR PCM : 2W (Tamb=25.) 20 W (Tcase=25.) 3. EMITTE


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    PDF O-220F 3CA1837 3DA4793 -230V, -100mA -500mA, -50mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR PNP TO – 126 FEATURES z High Current z Low Voltage 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    PDF O-126 3CA8772 -10mA 10MHz

    3CA1837

    Abstract: 3DA4793
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DA4793 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES z Complementary to 3CA1837 z Collector Power Dissipation PCM : 2W (Tamb=25℃) 20 W (Tcase=25℃) 1. BASE 2. COLLECTOR 3. EMITTE


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    PDF O-220F 3DA4793 3CA1837 100mA 500mA, 3CA1837 3DA4793

    3CA772

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA772 TRANSISTOR PNP TO – 126 FEATURES z High Current z Low Voltage 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    PDF O-126 3CA772 -10mA 10MHz 3CA772

    3CA1837

    Abstract: 3DA4793 Transistor 150 A pnp
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 3CA1837 TRANSISTOR PNP FEATURES z Complementary to 3DA4793 z Collector Power Dissipation 1. BASE 2. COLLECTOR PCM : 2W (Tamb=25℃) 20 W (Tcase=25℃) 3. EMITTE


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    PDF O-220F 3CA1837 3DA4793 -230V, -100mA -500mA, -50mA 3CA1837 3DA4793 Transistor 150 A pnp

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3CA1943 TO – 3P TRANSISTOR PNP 1. BASE FEATURES z High Breakdown Voltage z General Purpose Switching and Amplification 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF 3CA1943 -50mA -120V -800mA

    3CA8772

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR PNP TO-126 FEATURES Power dissipation 1. EMITTER 1.25 PCM: W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:


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    PDF O-126 3CA8772 O-126 10MHz 3CA8772

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 3CA2050 TO – 220F TRANSISTOR PNP 1. BASE FEATURES z High Breakdown Voltage z General Purpose Switching and Amplification 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF O-220F 3CA2050 -10mA -180V -500mA -50mA

    Untitled

    Abstract: No abstract text available
    Text: 3CA753 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30


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    PDF O-251/TO-252-2L 3CA753 O-251 O-252-2L -10mA -500mA -200mA -30mA

    3CA8772

    Abstract: TO126 package t 0433 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR( PNP ) TO—126 FEATURES Power dissipation PCM : 1.25 W(Tamb=25℃) Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range


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    PDF O-126 3CA8772 O--126 -100A 290TYP 090TYP 3CA8772 TO126 package t 0433 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 3DA4793 TRANSISTOR NPN 1. BASE FEATURES z Complementary to 3CA1837 z Collector Power Dissipation PCM : 2W (Ta=25.) 20 W (Tc=25.) 2. COLLECTOR 3. EMITTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF O-220F 3DA4793 3CA1837 100mA 500mA,

    transistor TO-126 Outline Dimensions

    Abstract: to-126 transistor 3CA8772 Plastic-Encapsulate Transistors TO-126
    Text: TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR( PNP ) TO—126 FEATURES Power dissipation PCM : 1.25 W(Tamb=25℃) Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range T J ,T stg: -55℃ to +150℃


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    PDF O-126 3CA8772 O--126 -100A 290TYP 090TYP transistor TO-126 Outline Dimensions to-126 transistor 3CA8772 Plastic-Encapsulate Transistors TO-126

    700B

    Abstract: AN1294 J-STD-020B PD57018-E PD57018S-E PD57018STR-E PD57018TR-E
    Text: PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package PowerSO-10RF


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    PDF PD57018-E Hz/28 PowerSO-10RF PowerSO-10RF. 700B AN1294 J-STD-020B PD57018-E PD57018S-E PD57018STR-E PD57018TR-E

    AN1294

    Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
    Text: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description


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    PDF PD57030-E PowerSO-10RF PowerSO-10RF. AN1294 J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E

    PD57006-E

    Abstract: SMD Transistor z6 AN1294 J-STD-020B PD57006S-E PD57006STR-E PD57006TR-E 0821 ST 12611 ZH30
    Text: PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package PowerSO-10RF


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    PDF PD57006-E PowerSO-10RF PowerSO-10RF. PD57006-E SMD Transistor z6 AN1294 J-STD-020B PD57006S-E PD57006STR-E PD57006TR-E 0821 ST 12611 ZH30

    PD55025-E

    Abstract: PD55025 AN1294 J-STD-020B PD55015STR-E PD55015TR-E PD55025S-E RF Transistor s-parameter ST 0841
    Text: PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


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    PDF PD55025-E PD55025S-E PowerSO-10RF PowerSO-10RF. PD55025-E PD55025 AN1294 J-STD-020B PD55015STR-E PD55015TR-E PD55025S-E RF Transistor s-parameter ST 0841

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    QM30DY-H

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-H • 1C • V cex • hFE Collector current. 30A Collector-emitter voltage. 600V DC current gain.75


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    PDF QM30DY-H E80276 E80271 QM30DY-H