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    TRANSISTOR 3TY Search Results

    TRANSISTOR 3TY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3TY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor Equivalent list

    Abstract: FMBT3904W 1N916 8 open colector output oc 140 npn transistor
    Text: Formosa MS NPN Epitaxial Planar Transistor FMBT3904W List List. 1 Package outline. 2


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    PDF FMBT3904W MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 Transistor Equivalent list FMBT3904W 1N916 8 open colector output oc 140 npn transistor

    MARKING CODE 20

    Abstract: No abstract text available
    Text: Formosa MS PNP Epitaxial Planar Transistor FMBT2907AW List List. 1 Package outline. 2


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    PDF FMBT2907AW 150mW 1000hrs 1000hrs 15min 20sec 1000cycle 96hrs MARKING CODE 20

    125OC

    Abstract: FMBT2222 FMBT2222A
    Text: Formosa MS NPN Epitaxial Planar Transistor FMBT2222AW List List. 1 Package outline. 2


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    PDF FMBT2222AW MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 FMBT2222 FMBT2222A

    marking code 37u

    Abstract: No abstract text available
    Text: Formosa MS PNP Epitaxial Planar Transistor FMBT2907AW List List. 1 Package outline. 2


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    PDF FMBT2907AW MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 marking code 37u

    231-112

    Abstract: No abstract text available
    Text: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2


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    PDF FMBT2907 FMBT2907A 120sec 260sec 30sec DS-231112 231-112

    FMBT2222A

    Abstract: fmbt2222 125OC 1N914
    Text: Formosa MS NPN Epitaxial Planar Transistor FMBT2222 / FMBT2222A List List. 1 Package outline. 2


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    PDF FMBT2222 FMBT2222A MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC FMBT2222A 1N914

    FMBT2907

    Abstract: FMBT2907A FMBT2222 FMBT2222A
    Text: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2


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    PDF FMBT2907 FMBT2907A MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC FMBT2907A FMBT2222 FMBT2222A

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2


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    PDF FMBT2907 FMBT2907A 120sec 260sec 30sec DS-231112

    2SC5124

    Abstract: No abstract text available
    Text: 2SC5124 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A)


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    PDF 2SC5124 Pulse20) 100mA 2SC5124

    2SC5124

    Abstract: No abstract text available
    Text: 2SC5124 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A)


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    PDF 2SC5124 Pulse20) 100mA 2SC5124

    LZ2324AK

    Abstract: No abstract text available
    Text: LZ2324AK LZ2324AK 1/, type B/W CCD Area Sensor for CCIR PIN CONNECTIONS DESCRIPTION li!2324AK is a 1 /3tyw 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices). Having approximatelyOB90pixels (horizontal 542 Xvertical


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    PDF LZ2324AK LZ2324AK 2324AK approximatelyOB90pixels 16-PIN

    Untitled

    Abstract: No abstract text available
    Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING


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    PDF QID4515001 Amperes/4500 00A/s 100nH 180nH

    Untitled

    Abstract: No abstract text available
    Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING


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    PDF QID4515001 Amperes/4500 180nH 100nH

    QID4515001

    Abstract: No abstract text available
    Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING


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    PDF QID4515001 Amperes/4500 180nH 100nH QID4515001

    transistor k 975

    Abstract: No abstract text available
    Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING


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    PDF QID4515001 Amperes/4500 180nH 100nH transistor k 975

    Untitled

    Abstract: No abstract text available
    Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH)


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    PDF QID4515001 Amperes/4500 180nH 100nH

    Untitled

    Abstract: No abstract text available
    Text: How To Handle Transistors Although SAN YO makes all possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the


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    TO-126LP

    Abstract: No abstract text available
    Text: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle


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    Transistor 2TY

    Abstract: PHILIPS CNX21 CNX21 .2ty transistor npn Transistor 3TY diode 2Ty sot211 jn85 diode Optocouplers .2ty transistor
    Text: CNX21 ÖUALITY TECHNOLOGIES CORP S7E » • 74bbflSl 0004527 042 ■ ÛTY T ^ H t- HIGH-VOLTAGE OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a silicon n-p-n photo­ transistor. The base is not accessible. Features of this product:


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    PDF CNX21 74bbflSl cut-of1986 OT212. 0DD4fl03 MSA048-2 Transistor 2TY PHILIPS CNX21 CNX21 .2ty transistor npn Transistor 3TY diode 2Ty sot211 jn85 diode Optocouplers .2ty transistor

    2SC3520

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LTP 55E ]> 7 ^ 0 7 4 1 O O G m s a 114 ISAKJ Silicon NPN Triple Diffused Planar ☆ High Voltage Switching Transistor 2SC3520 Application Example : • Outline Drawing 2 ••• -M T-100 T03P Switching Regulator and General Purpose Electrical Characteristics


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    PDF 2SC3520 T-100 10Omax 400mm 10min 2SC3520

    bt 44a

    Abstract: Transistor 2TY npn photo transistor P042A
    Text: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life


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    PDF P040/44A 74bbflSl GDD4b74 OT90B P040/44A P040A, P042A, P043A, P044A 74bbfl51 bt 44a Transistor 2TY npn photo transistor P042A

    NEC varistor

    Abstract: 1S1209 VD1222 VD1221 1s1211 VD1120 VD1212 NEC green varistor varistor nec VD1220
    Text: NEC SILICON VARISTOR 1S1209 ~ 1S1212 ELECTRON DEVICE VD1120~ VD1223 FEATURES • Silicon D iode V aristor fo r Voltage and S u ita b le fo r vo lta g e and te m p e ra tu re co m p e n sa tio n o f B-class Tem perature Com pensation o f Transistor p u s h -p u ll a m p lifie r.


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    PDF 1S1209 1S1212 VD1120~ VD1223 NEC varistor 1S1209 VD1222 VD1221 1s1211 VD1120 VD1212 NEC green varistor varistor nec VD1220

    equivalent transistor K 3531

    Abstract: k 3531 transistor transistor K 3531 b 514 transistor TA7686 406MHZ rca 632 class c tuned amplifier rca rf overlay transistor 40893
    Text: File No. 514 RF Power Transistors Solid State Division 40893 15-W, 4 7 0 -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N T y p e fo r Class C A m p lifie rs in 1 2 . 5 - V M o b ile C om m unications E q uip m en t Features: • 5.2-dB gain {min. at 4 7 0 MHz, Po


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    PDF 470-MHz 512-MHz RCA-40893* over095 equivalent transistor K 3531 k 3531 transistor transistor K 3531 b 514 transistor TA7686 406MHZ rca 632 class c tuned amplifier rca rf overlay transistor 40893

    CNR50

    Abstract: TDA8385 B5415 BS415 BS7002 .2ty transistor
    Text: Product specification Philips Semiconductors CNR50 Dedicated IC-optocoupler ÛUA L IT Y T E C H N O L O G I E S CORP S?£ J OD O m m b 0 1 3 * i 3TY FEATURES • A cost effective optocoupler with integrated additional functions T • A wide body DIL 8 encapsulation


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    PDF CNR50 TDA8385 B5415 BS415 BS7002 .2ty transistor