HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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EA-PS 7032-200
Abstract: EA-PS 7016-400 EA-PS 7016-100 71500-04 7032-200 EA-PS 7032 digital Amperemeter ttl 7032 .7032-200 serie 7000 EA
Text: LABOR-NETZGERÄTE SERIE 7000 EA-PS 7016-200 LCD q q q q q q q q q q q q q q Systemanwendungen Unterrichtsräume und Laboratorien Transistor-Linearregler mit Thyristor-Vorregler Ausgangsleistung 80W, 160W, 320W, 640W Ausgangssp. 0.16V, 0.32V, 0.65V und 0.150V
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12/15V
331x133x345mm
EA-PS 7032-200
EA-PS
7016-400
EA-PS 7016-100
71500-04
7032-200
EA-PS 7032
digital Amperemeter
ttl 7032
.7032-200 serie 7000 EA
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InP transistor HEMT
Abstract: sxa389z XA3Z MCH18 SXA-389 SXA-389B SXA-389Z
Text: SXA-389 Z SXA-389(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
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SXA-389
400MHz
2500MHz
OT-89
400MHz
to2500MHz
InP transistor HEMT
sxa389z
XA3Z
MCH18
SXA-389B
SXA-389Z
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XA3Z
Abstract: No abstract text available
Text: SXA-389 Z SXA-389(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
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SXA-389
400MHz
2500MHz
OT-89
400MHz
to2500MHz
XA3Z
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
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42t1
Abstract: No abstract text available
Text: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS
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PZTA42T1/D
PZTA42T1
OT-223
42t1
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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PHN105
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor P H N 105 FEATURES DESCRIPTION • High speed switching N-channel enhancement mode MOS transistor in an 8-pin plastic S 0 8 SOT96-1 package. • No secondary breakdown
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PHN105
OT96-1)
7110fl2Li
711002t
PHN105
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AT415
Abstract: No abstract text available
Text: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga
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AT-41511,
T-41533
AT-41511:
AT-41533:
OT-23
OT-143
AT-41511
AT-41533
OT-23,
AT415
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BLY94
Abstract: VQE 13E philips Trimmer 60 pf transistor 42t vhf power transistor 50W Wf VQE 23 F BLY94 application notes film dielectric trimmer WF VQE 23 D WF VQE 23 e
Text: PHILIPS INTERNATIONAL bSE ß • 7110äSb> DGL3bSS 5^3 ■ PHIN B LY 94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran
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7110fl2fc.
BLY94
OT-55.
Tmb-25
BLY94
VQE 13E
philips Trimmer 60 pf
transistor 42t
vhf power transistor 50W
Wf VQE 23 F
BLY94 application notes
film dielectric trimmer
WF VQE 23 D
WF VQE 23 e
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KC224575
Abstract: KT224515 KT224510 KC224503 pj 1339 KC-224575 KC324510 KR224505 ke721k03 KR224503
Text: m N E R E X Powerex, Inc., 200 Hillis St reet, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 42t Avenue Ci Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Powerex Darlington Transistor Modules are in wide use in inverter and power supply circuits. The last
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BP107,
KET24505HB
KE921205HB
KET24575HB
KET24510HB
KC224575
KT224515
KT224510
KC224503
pj 1339
KC-224575
KC324510
KR224505
ke721k03
KR224503
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Untitled
Abstract: No abstract text available
Text: International TGR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ms @ 125°C, VGe = 15V
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IRG4PC40K
O-247AC
002S112
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NDT410EL
Abstract: No abstract text available
Text: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDT410EL
OT-223
004006b
NDT410EL
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TRANSISTOR 2FE
Abstract: No abstract text available
Text: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4PC30U
O-247AC
TRANSISTOR 2FE
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier Data Sheet No. PD -6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary • G ate drive supply range from 12 to 18V ■ Undervoltage lockout ■ Current detection and limiting loop to limit driven power transistor current
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IR2121
IR2121
5M-1982
M0-047AC.
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mp4001
Abstract: MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran
Text: Power Transistor M odule and Power MOS-FET M odule As the density of electronic part mounting continues to increase in the field of discrete products, miniaturization of the hybrid devices named super mini and power mini is advancing rapidly. There are also calls for miniaturization and
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700cm1
300cmJ
mp4001
MP4001 equivalent
transistor equivalent table
bipolar transistor NEC
MP4501
mp4001 tran
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SmD TRANSISTOR 42T
Abstract: smd 42t
Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100
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O-220
BUZ100
C67078-S1348-A2
6235bDS
SmD TRANSISTOR 42T
smd 42t
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STP19N05L
Abstract: STP19N06L
Text: SGS-THOMSON STP19N05L STP19N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TENTATIVE DATA TYPE Id V d ss RDS on STP19N05L 50 V 0.1 n 19 A STP19N06L 60 V 0.1 £2 19 A • ■ . ■ ■ ■ . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED
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STP19N05L
STP19N06L
STP19N05L
STP19N06L
O-220
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transistor 42t
Abstract: CSB1086 CSD1563
Text: CSB1086 CSB1086 PNP PLASTIC POWER TRANSISTOR Complementary CSD1563 Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A B 7.4 10.5 7.8 10.8 C 2.4 0.7 2.7 0.9 D 2.25 TYP. E F 0.49 | 0.75 G 4.5 TYP. L 15.7 TYP. M 1.27 TYP.
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CSB1086
CSB1086
CSD1563
30MHz
QQ01242
transistor 42t
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Untitled
Abstract: No abstract text available
Text: CSB1086 CSB1086 PNP PLASTIC POWER TRANSISTOR Complementary CSD1563 Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 10.8 B 10.5 C 2.4 2.7 D 0.7 0.9 2.25 TYP. E F 0.49 | 0.75 G 4.5 TYP. L 15.7 TYP. M 1.27 TYP.
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CSB1086
CSD1563
30MHz
23fl33t14
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1701 International IQR Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHM7Z60 IRHM8Z60 R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L MEGA RAD HARD 30 Vo It, 0.014Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s R AD H AR D te c h n o lo g y
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IRHM7Z60
IRHM8Z60
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Untitled
Abstract: No abstract text available
Text: ¿ = 7 S G S -T H O M S O N TEA2164 SWITCH MODE POWER SUPPLY PRIMARY CIRCUIT • POSITIVE AND NEGATIVE OUTPUT CUR RENT UP T 0 1.2A AND - 1.7A ■ A TWO LEVEL COLLECTOR CURRENT LIMI TATION ■ COMPLETE TURN OFF AFTER LONG DURA TION OVERLOADS ■ UNDER AND OVER VOLTAGE LOCK-OUT
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TEA2164
TEA2164control
TEA2164
007Sb4c
DIP16PW
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MPM3003
Abstract: MC33035 ss43 hall RGP 30 H1 MOTOROLA brushless dc controller schematic Ss54 DIODE drive control damp motor Transistor sS41 MC33033 TJ3 diode bridge
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MPM3003 ICePAK Power M odule P-Channel and N-Channel Power M OSFET in a Three-Phase Bridge Configuration M otorola Preferred D evice The MPM3003 is a three-phase bridge power circuit packaged in the new power SIP called the ICePAK package. The upper legs of the bridge consist of three P-Channel
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MPM3003
b3b7254
MC33035
ss43 hall
RGP 30 H1
MOTOROLA brushless dc controller schematic
Ss54 DIODE
drive control damp motor
Transistor sS41
MC33033
TJ3 diode bridge
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