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    TRANSISTOR 447 CY Search Results

    TRANSISTOR 447 CY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 447 CY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UC3843 step down converter

    Abstract: UC3843 sepic step up converter ,UC3843 step up converter uc3843 step up TL494 step up uc3843 step down TL494 step down UC3843 step up converter TL494 AC-DC CONVERTER UC3843 sepic converter
    Text: CHAPTER 1 Selector Guide http://onsemi.com 6 http://onsemi.com 7 ON Semiconductor Switching Controllers Selection Tables AC−DC/Isolated Switching PFC/PWM Combo Page 14 Power Factor Correction (Page 15) Flyback (Low Power) Forward (Low Power) Half−Bridge


    Original     		PDF UC3843, Non-UC3843, UC3825 SO-16 NCP1561DR2 UC3843 step down converter UC3843 sepic step up converter ,UC3843 step up converter uc3843 step up TL494 step up uc3843 step down TL494 step down UC3843 step up converter TL494 AC-DC CONVERTER UC3843 sepic converter

    pin configuration of ic TL084

    Abstract: 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note
    Text: IC Testers VPL-AICT LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 Analog IC Tester Transistor Arrays ULN2001 ULN2002 ULN2003 ULN2004 ULN2005 ULN2064 ULN2065 ULN2066 ULN2067 ULN2068 ULN2069 ULN2074 ULN2075 TD62501 TD62502 TD62503 TD62504 TD62505


    Original     		PDF LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 ULN2001 ULN2002 pin configuration of ic TL084 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note

    Untitled

    Abstract: No abstract text available
    Text: FMBA14 FMBA14 C2 E1 C1 pin #1 B1 B2 E2 SuperSOTä-6 Mark: .1N Dot denotes pin #1 NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*


    Original     		PDF FMBA14

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    c2689

    Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
    Text: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n


    OCR Scan     		PDF MIL-S-19500/447 2N5926 TX2N5926 0D13flS7 MiL-S-l9500/447 5961-A340 c2689 Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx TX2N5926 transistor AS 431 tx transistor

    transistor 377

    Abstract: BD376 BD375 bd379
    Text: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS • Complement to BD376, BD378 and BD380 respectively A B S O LU T E MAXIMUM RATINGS Symbol Characteristic Collector Base Voltage : BD375 Rating V V V ceo 100 45


    OCR Scan     		PDF BD375/377/379 BD376, BD378 BD380 BD375 BD377 BD379 BD377 transistor 377 BD376 BD375 bd379

    Untitled

    Abstract: No abstract text available
    Text: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD375, BD377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit -5 0 -7 5 - 100 -4 5 -6 0 -8 0 V V l C ollector Base Voltage


    OCR Scan     		PDF BD376/378/380 BD375, BD377 BD379 O-126 BD376 BD378 BD380

    sgsp230

    Abstract: No abstract text available
    Text: n Z J SGS THOM SON SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 VDss 450 V ^D S on 3 Í2 Id 2.5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 450V FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT > 100KHz


    OCR Scan     		PDF SGSP230 SGSP230 100KHz OT-82 OT-194

    Untitled

    Abstract: No abstract text available
    Text: rz7 SGS-THOMSON * JÆ . M ffi iLi gïïM O (êS SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on SGSP230 450 V 3 n Id 2.5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 450V FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION


    OCR Scan     		PDF SGSP230 100KHz OT-194

    2N3694

    Abstract: 2N3693 MPS3694 SILICON SMALL-SIGNAL DICE SILICON DICE motorola mps3693
    Text: MOTOROLA SC {DIODES/ OP TO } 6 3 6 7 2 5 ^ _ MOTOROLA ~34 SC »F|b3t,7SSS 003fi01t, t> | ~ <D f O D E S / O P T O 34C 38016 SILICON SMALL-SIGNAL TRANSISTOR DICE continued) MPSC3694 DIE NO. — NPN LINE SOURCE — DEL235 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF 003fi01t, DEL235 2N3693 2N3694 MPS3693 MPS3694 MPSC3694 MPS3694 SILICON SMALL-SIGNAL DICE SILICON DICE motorola

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FMMT555 IS S U E 3 - J A N U A R Y 1996 FEATURES * 150 Volt V,CEO * 1 A m p continuous current C O M P L E M E N T A R Y TY PE - FM M T455 P A R T M A R K IN G D E T A IL - 555 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    OCR Scan     		PDF FMMT555 -100mA, -10mA* -10mA, -300mA, -50mA, 100MHz

    D 1398 Transistor

    Abstract: k 1398 Transistor transistor AS 431 LB 121 NPN TRANSISTOR
    Text: REVISIONS m ulticom p ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # S PC-F005.DW G REV DOC. NO. S P C - F 0 0 5 DESCRIPTION DRAWN 1 447 RELEASED


    OCR Scan     		PDF PC-F005 30MHz, 10kohm 2N930A 35C0743 SPC--F005 D 1398 Transistor k 1398 Transistor transistor AS 431 LB 121 NPN TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 3 0 e: D ¿ = 7 n 7 e! 2 ci2 3 7 Q Q 2ci c127 S C S -T H O M S O N T H T '— P ' S 0, — Vi f i T r S ^7# RjflH @ilLi gT]»lSÖÖ©i r - SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 V dss 450 V ^DS(on 30 *D 2.5 A • HIGH SPEED SWITCHING APPLICATIONS


    OCR Scan     		PDF SGSP230 100KHZ SC-0000/1

    D 1398 Transistor

    Abstract: k 1398 Transistor
    Text: REVISIONS m ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # SPC—F005.DWG REV DOC. NO. S PC -F005 DESCRIPTION DRAWN DATE / / Effective: 7 / 8 / 0 2


    OCR Scan     		PDF -F005 SPC--F005 20MHz 500mV, 2N3700 D 1398 Transistor k 1398 Transistor

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON BUV27 FAST NPN SWITCHING TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-O FF AND TURN-ON D E S C R IP T IO N High speed transistor suited for low voltage applica­ tions. High frequency and efficiency converters switching regulators m otor control.


    OCR Scan     		PDF BUV27