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    TRANSISTOR 44T Search Results

    TRANSISTOR 44T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 44T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors kb53R31 003213^ 44T IHAPX Product specification NPN 1 GHz wideband transistor £ BFW92 N AUER PHILIPS/DISCRETE b'lE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power


    OCR Scan     		kb53R31 BFW92 BFW92/02 MEA393 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CZT2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and


    OCR Scan     		CZT2222A CZT2222A OT-223 150mA, PDF

    44t transistor

    Abstract: No abstract text available
    Text: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 15 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~ *th J C DC, pro Zweig / per arm


    OCR Scan     		PDF

    44t transistor

    Abstract: No abstract text available
    Text: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 600 V 15 A lc Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~*thJC DC, pro Zweig / per arm


    OCR Scan     		PDF

    CZT2222A

    Abstract: vqe 14 E vqe 14 vqe 71 44t transistor transistor 44t
    Text: Central“ C Z T2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The C E N TR A L SE M IC O N D U C T O R CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and


    OCR Scan     		CZT2222A CZT2222A 150mA, vqe 14 E vqe 14 vqe 71 44t transistor transistor 44t PDF

    C7021

    Abstract: PT600T C7035
    Text: v r e DATE : ‘REP4RED BY: 2’ “-” 1 lsPECNO. DG-953054 1 / 1 1 PAGE ELECTRONIC COMPONENTS GROUP REP E E~TATIVE,DIVISION SHARP CORPORATION o SPECIFICATION -w, ? O u“DEVICES.~IV. {/tFl/{44tl/ “ ‘“ 4 “ ‘-> < \ ~ DEVICE SPECIFICATION FOR PHOTO-TRANSISTOR


    Original     		DG-953054 44tl/ PT60C C7021 PT600T C7035 PDF

    Untitled

    Abstract: No abstract text available
    Text: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve


    OCR Scan     		IRGB430U O-220AB 0G20375 TQ-220AB 4ASS452 02037b PDF

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 PDF

    222203028109

    Abstract: IR802 transistor PH7n vogt 44t transistor 2222 kn a ceramic trimmer capacitor International Power Sources ph7n tl 4013
    Text: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS BLF547 INTERNATIONAL FEATURES SbE 7110fl2b 00414012 flJ3 BIPHIN T> PIN CONFIGURATION 7 - 3 * ? - ¡ S ' • • • • High power gain Easy power control Good thermal stability


    OCR Scan     		BLF547 OT262A2 711Gfl2b T-37-at MBA379 URB012 222203028109 IR802 transistor PH7n vogt 44t transistor 2222 kn a ceramic trimmer capacitor International Power Sources ph7n tl 4013 PDF

    transistor 2SA15

    Abstract: 2sa153 2SA15 2SA1539 2SC3954 QDSD475 SA15
    Text: Ordering number: EN 2 4 3 8 A 2SA1539/2SC3954 N0.2438A PNP/NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications i Applications . High-definition CRT display video output, wide-band amp Features . High fT: f\p=500MHz


    OCR Scan     		2SA1539/2SC3954 500MHz 120Vmin SC3954 39/2SC 1305047b transistor 2SA15 2sa153 2SA15 2SA1539 2SC3954 QDSD475 SA15 PDF

    2SK2228

    Abstract: Transistor 3202 1 A 60
    Text: TO SH IBA SDOSSO T05H IBA FIELD EFFECT TRANSISTOR 2SK2228 QQE33Ô3 447 SILICON N CHANNEL M OS TYPE L2-tt-MOSIV 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		QQE33Ã 2SK2228 T05HIBA O-22QAB O-220 50URCE O-220FL 00E3b43 O-220SM Transistor 3202 1 A 60 PDF

    Untitled

    Abstract: No abstract text available
    Text: HD66330T TFT Driver -(6 4 -Level Gray Scale Driver fo r TFT Liquid Crystal Display) —Preliminary — Description Features The HD66330T, a signal driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The


    OCR Scan     		HD66330T HD66330T, HD66330T 64-level Y1-Y192 Y1-192 44Tfc PDF

    Untitled

    Abstract: No abstract text available
    Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TD9944 125pF DSFP-TD9944 A022309 PDF

    Untitled

    Abstract: No abstract text available
    Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TD9944 125pF DSFP-TD9944 A012009 PDF

    2SK2235

    Abstract: DDS3400 44t transistor DDS34
    Text: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		DDS3400 2SK2235 300juA 20kfi) O-22QAB O-220 50URCE O-220FL 00E3b43 44t transistor DDS34 PDF

    SAA 7010

    Abstract: 12533-5 TL/H/12533-6 LMC6009 LMC6009MT LMC6009MTX MTD48 44t Short Circuit Protection RRD-B30M56 BEL 640 transistor
    Text: ADVANCE INFORMATION Semiconductor April 1996 LMC6009 9 Channel Buffer Amplifier for TFT-LCD General Description Features The LMC6009 is a CMOS integrated circuit that buffers 9 reference voltages for gamma correction in a Thin Film Transistor Liquid Crystal Display TFT-LCD . Guaranteed to


    OCR Scan     		LMC6009 LMC6009 bS0112M 01G17bG SAA 7010 12533-5 TL/H/12533-6 LMC6009MT LMC6009MTX MTD48 44t Short Circuit Protection RRD-B30M56 BEL 640 transistor PDF

    44TG

    Abstract: TD9944 TD9944TG-G
    Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TD9944 125pF DSFP-TD9944 A041309 44TG TD9944 TD9944TG-G PDF

    Untitled

    Abstract: No abstract text available
    Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TD9944 125pF MS-012, DSFP-TD9944 A020508 PDF

    Untitled

    Abstract: No abstract text available
    Text: HD6631OT- TFT-Type LCD Driver for VDT Description The HD66310T is a drain bus driver for TFT-type (thin film transistor) LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD.


    OCR Scan     		HD6631OT--------------- HD66310T HD66310T00) HD66310T0015) HD66310T 04iaclQB PDF

    Untitled

    Abstract: No abstract text available
    Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TD9944 125pF DSFP-TD9944 A091608 PDF

    Untitled

    Abstract: No abstract text available
    Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TD9944 125pF MS-012, F071408. DSFP-TD9944 A081308 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6


    OCR Scan     		BSP318S OT-223 Q67000-S127 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF