200E
Abstract: MRF1047 MRF1047T1
Text: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA
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MRF1047T1/D
03AUG01
26MAR02
200E
MRF1047
MRF1047T1
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BFP520
Abstract: VPS05605
Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability
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BFP520
VPS05605
OT343
50Ohm
45GHz
-j100
Aug-09-2001
BFP520
VPS05605
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ev 2816
Abstract: ic rom 2816 VPS05605 transistor bfp 520 gummel
Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 Gold metallization for high reliability
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VPS05605
OT-343
50Ohm
45GHz
-j100
Jun-09-2000
ev 2816
ic rom 2816
VPS05605
transistor bfp 520
gummel
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PDF
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VPS05605
Abstract: No abstract text available
Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 Gold metallization for high reliability
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VPS05605
OT-343
50Ohm
45GHz
-j100
Jan-29-1999
VPS05605
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PDF
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IC 7481 pin configuration
Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability
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BFP520
VPS05605
OT343
50Ohm
45GHz
-j100
Sep-26-2001
IC 7481 pin configuration
IC 7481
ev 2816
01177
ic rom 2816
BFP520
BFP520 application notes
k 3683 transistor
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PDF
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AM1214-300
Abstract: No abstract text available
Text: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base
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AM1214-300
AM1214-300
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transistor b 1238
Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1
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VPS05605
Q62702-F1794
OT-343
50Ohm
45GHz
-j100
Sep-09-1998
transistor b 1238
Q62702-F1794
transistor bf 520
transistor bfp 520
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AM1214-300
Abstract: No abstract text available
Text: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base
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AM1214-300
AM1214-300
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2N2484
Abstract: Q2N2484 MSCO280A q2n* npn transistor
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2484 Features • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /376 Collector - Base Voltage 60 V Collector - Current 50 mA High Speed, Low Power Bipolar Transistor
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2N2484
MSCO280A
DSW2N2484
2N2484
Q2N2484
q2n* npn transistor
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456767 1234567675 345676758 RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the
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952-954MHz
RA03M9595M
RA03M9595M
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367589 123456367589 RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the
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806-869MHz
34dBm
RA02M8087MD
34dBm
300mA
-26dBc
31dBm
RA02M8087MD
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456364 1234563645 3456364578 RoHS Compliance , 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4043MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the
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400-430MHz
38dBm
RA03M4043MD
38dBm
19dBm
-25dBc
35dBm
RA03M4043MD
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HS2907A
Abstract: JANTX2N2907AUB JANTX2N2907A JANTXV2N2907A JANTXV2N2907AUB JANTXV2N2907 4VDC60 JANTX2N2907 HS2907
Text: JANTXV2N2907AUB A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 HSOT PRODUCT SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n I.A.W. MIL-PRF-19500/291 n SMALL OUTLINE SURFACE MOUNT PACKAGE n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
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JANTXV2N2907AUB
MIL-PRF-19500/291
10Vdc,
100kHz<
HS2907A
JANTX2N2907AUB
JANTX2N2907A
JANTXV2N2907A
JANTXV2N2907AUB
JANTXV2N2907
4VDC60
JANTX2N2907
HS2907
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2N2484
Abstract: No abstract text available
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2484 Features 60 Volts 50mAmps • Meets MIL-S-19500/376 • Collector-Base Voltage 60V • Collector Current: 50 mA NPN BIPOLAR TRANSISTOR Maximum Ratings RATING Collector-Emitter Voltage
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2N2484
50mAmps
MIL-S-19500/376
MSC0280A
2N2484
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO-126C FEATURES z z High voltage and Large current capacity Complementary to 2SB744,2SB744A 1. EMITTER 123 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-126C
2SD794/794A
O-126C
2SB744
2SB744A
2SD794
2SD794A
100mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR NPN SOT-89-3L FEATURES Low VCE(sat) 1.BASE 123 2.COLLECTOR Marking: DT 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-89-3L
2SD2391
OT-89-3L
100MHz
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Untitled
Abstract: No abstract text available
Text: 12345 2000.5.11 PWM Step-up DC/DC Converter R1210NXX2X Series n OUTLINE The R1210NXX2X Series are PWM step-up DC/DC Converter controllers, with high accuracy, low supply current by CMOS process. Each of the R1210NXX2X Series consists of an oscillator, a PWM circuit, a reference voltage unit, an error
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R1210NXX2X
R1210N302C)
R1210N302D)
R1210N502C)
200mV
200mV
R1210N502D)
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Untitled
Abstract: No abstract text available
Text: DTC143TSA NPN DIGITAL TRANSISTOR P b Lead Pb -Free Features: 123 without connecting external input resistors(see equivalent circuit). (1)GND (2)OUT (3)IN to allow negative biasing of the input.They also have the advantage Equivalent Circuit device design easy.
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DTC143TSA
100MHz
09-Apr-2012
O-92S
270TYP
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007N36 TRANSISTOR NPN TO-220 FEATURES z Power switching applications 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 123 3. EMITTER Symbol
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O-220
3DD13007N36
O-220
500mA
UI9600)
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2221 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features • • • • • • • 1235 - 1365 MHz 50 VOLTS 5:1 VSWR CAPABILITY INPUT / OUTPUT MATCHING
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MS2221
MS2221
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MIL-S-19500/291
Abstract: 2N2907A
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2907A Features • • • • 60 Volts 0.6 Amps Meets MIL-S-19500/291 Collector-Base Voltage 60V Collector Current: 600 mAdc Fast Switching 345 nS PNP BIPOLAR TRANSISTOR Maximum Ratings
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2N2907A
MIL-S-19500/291
MSC0276A
MIL-S-19500/291
2N2907A
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BUZ10A
Abstract: automatic motor for reverse and forward guided vehicle 30C17
Text: 7=52=1237 w # Q02^b4b 2 S G S -T H O M S O N k 7 # BUZ10A [M lD { g ^ Q iL [l ïï^ © lD (g i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G S- TH OMSO N 30E TYPE V qss ^ ds (on) Id B U Z 10 A 50 V 0 .1 2 Î2 17 A 3> • H IG H S P E E D S W IT C H IN G
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BUZ10A
BUZ10A
automatic motor for reverse and forward
guided vehicle
30C17
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Transistor 2N2484
Abstract: No abstract text available
Text: M ic m s e m Watertown, MA 02172 PH: 617 930-0404 FAX: (617) »24-1235 i 2N2484 Features 60 Volts 50mAmps • rteeis M IL-S-19500/376 • S e c to r-B a s e Voltage 60V • Collector C u rre n t 50 mA NPN BIPOLAR TRANSISTOR Maximum Ratings R ’ 1r •i ,
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2N2484
IL-S-19500/376
50mAmps
SC0280A
Transistor 2N2484
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PDF
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MSCQ2
Abstract: t 317 transistor
Text: Microsemi W ntertown, M A 0Î172 PH: S17 S26-0404. F A X <617) #24-1235 2N2369A Features 40 Volts 200mAmps • Meats MIL-S-19500/317 • Iiolector-Sase Voftage 40V • (Jollector Current 200 mA • I-ast Switching 3 0 nS NPN BIPOLAR TRANSISTOR Maximum Ratings
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MIL-S-19500/317
S26-0404.
2N2369A
200mAmps
MSCQ277A
MSCQ2
t 317 transistor
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