bfg97
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223
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BFG97
OT223
BFG31.
MSB002
OT223.
R77/02/pp16
bfg97
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BFG97
Abstract: BFG31 TRANSISTOR BFg97 sc7313
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223
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Original
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BFG97
OT223
BFG31.
MSB002
OT223.
R77/02/pp16
BFG97
BFG31
TRANSISTOR BFg97
sc7313
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
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BFR106
MSB003
R77/02/pp10
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BFR106
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
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BFR106
MSB003
R77/02/pp10
BFR106
MSB003
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2SA1036
Abstract: IMT17 IMT17-AG6-R IMT17L-AG6-R
Text: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES 4 *Two 2SA1036 chips in an SMT package. *Transistor elements are independent, eliminating interference. *High collector current. Ic = - 500mA 5 6 3 STRUCTURE 4 5 2 1
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IMT17
2SA1036
500mA
OT-26
IMT17L
IMT17-AG6-R
IMT17L-AG6-R
QW-R215-006
IMT17
IMT17-AG6-R
IMT17L-AG6-R
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BFR106
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
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Original
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BFR106
BFR106
MSB003
R77/02/pp10
771-BFR106-T/R
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated
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BFR93AW
OT323
BFR93AW
BFR93A.
R77/02/pp14
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BFR93 application note
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
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BFT93
R77/02/pp10
BFR93 application note
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BFT93
Abstract: BFR93 application note bfr93 MSB003 BFR93A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
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BFT93
R77/02/pp10
BFT93
BFR93 application note
bfr93
MSB003
BFR93A
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SOT23 W1P NXP
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF
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BFT92
MSB003act
R77/02/pp10
SOT23 W1P NXP
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W1p TRANSISTOR
Abstract: BFT92 transistor w1P w1p npn SOT23 W1P BFR92 application note SOT23 W1P NXP w1p 60 transistor Bft92 W1p 48 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF
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BFT92
R77/02/pp10
W1p TRANSISTOR
BFT92
transistor w1P
w1p npn
SOT23 W1P
BFR92 application note
SOT23 W1P NXP
w1p 60
transistor Bft92
W1p 48 TRANSISTOR
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DIN 3021-3 STANDARD
Abstract: DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp
Text: Operating Instructions VEGASWING 51 - transistor PNP Contents Contents 1 About this document 1.1 1.2 1.3 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 6
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30213-EN-070201
DIN 3021-3 STANDARD
DIN 3021-3
tuning fork application note
DIN 43650 form c
PIEZO DISK 25 MM
30213-EN-070201
namur NE 93
TIP 34 pnp
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BFR92A application note
Abstract: e1/BFR92A application note BFT92 marking code P2p SOT23 BFR90A BFR92A MSB003 marking code P2p
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR92A NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor
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BFR92A
BFT92.
MSB003
SCA55
127127/00/02/pp12
BFR92A application note
e1/BFR92A application note
BFT92
marking code P2p SOT23
BFR90A
BFR92A
MSB003
marking code P2p
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BFR93 application note
Abstract: transistor BFR93 BFR91 application note bfr93 BFR91 BFT93 MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93 NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93
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BFR93
BFT93.
MSB003
SCA55
127127/00/02/pp12
BFR93 application note
transistor BFR93
BFR91 application note
bfr93
BFR91
BFT93
MSB003
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN Low noise figure DESCRIPTION
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BFS25A
OT323
OT323
MBC870
OT323.
R77/03/pp13
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MRC034
Abstract: MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN Low noise figure
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BFS25A
OT323
OT323
MBC870
OT323.
R77/03/pp13
MRC034
MRC036
MRC031
BFS25A
RF NPN POWER TRANSISTOR 3 GHZ
Replacement Handbook
MRC053
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MCD141
Abstract: marking code V11 MCD144 marking code s22 TS165 MCD148 MRC038 Philips mcd139
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor
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BFG25A/X
OT143B
MSB014
SCA55
127127/00/03/pp12
MCD141
marking code V11
MCD144
marking code s22
TS165
MCD148
MRC038
Philips mcd139
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SD1222-5
Abstract: IC 785 SD1222
Text: SD1222-5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES:
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SD1222-5
SD1222-5
the118-136
IC 785
SD1222
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BFR93A
Abstract: BFR93AW MBG207
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain
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BFR93AW
OT323
BFR93AW
BFR93A.
R77/02/pp14
BFR93A
MBG207
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability
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BFG31
OT223
MSB002
OT223.
BFG97.
R77/02/pp9
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain
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Original
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BFR93AW
OT323
BFR93A.
BFR93AW
MBC870
R77/02/pp14
771-BFR93AW-T/R
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PDF
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MARKING W2 SOT23 TRANSISTOR
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBC1623L7 IM E D £ V ì b l l M a 0007251^5 ^ NPN EPITAXIAL SILICON TRANSISTOR -AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic
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OCR Scan
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MMBC1623L7
OT-23
MMBC1623L3
MARKING W2 SOT23 TRANSISTOR
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2N6518
Abstract: 2N6520
Text: SAMSUNG SEMI C ONDUCTOR INC 2N6518 14E D | 7^4142 00071^3 S | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISTOR T O -9 2 ABSOLUTE MAXIMUM RATINGS Ta=25°C f ; Characteristic Symbol Rating Unit -2 5 0 -2 5 0 -5 -5 0 0 -2 5 0 0 .6 25 5 150 —5 5 ~ 1 50
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OCR Scan
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2N6518
T-29-21
2N6520
10OfjAe
-10mA,
-20mA,
-30mA,
-50mA,
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2n4401
Abstract: No abstract text available
Text: 2N4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V CEo = 40V • Collector Dissipation: Pc m ax =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Rating Unit VcBO 60 40 6 600 625 150 -5 5 -1 5 0
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2N4401
625mW
2N4400
500mA,
150mA,
lc-500m
100KHz
100MHz
2n4401
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