Untitled
Abstract: No abstract text available
Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA
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IMX17
2SD1484K
500mA
OT-26
QW-R215-001
500mA,
100mA
-20mA,
100MHz
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M63828DP
Abstract: 16PIN M63828WP 16P4X-A IL500
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made
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M63828WP/DP
500mA
M63828WP
M63828DP
500mA)
16P2X-B
16P2X-B
16PIN
16P4X-A
IL500
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pnp darlington array
Abstract: PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A M54587FP
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54587P/FP
500mA
M54587P
M54587FP
pnp darlington array
PNP DARLINGTON SINK DRIVER 500ma
pnp 8 transistor array
pnp DARLINGTON TRANSISTOR ARRAY
darlington Mitsubishi
M54585
darlington array
M54587
20P2N-A
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2SB1132G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA/-50mA)
2SB1132L-x-AB3-R
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
2SB1132L-x-TN3-T
2SB1132G-x-TN3-T
OT-89
2SB1132G
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M54585P
Abstract: M54585FP common collector npn array 18P4G 20P2N-A npn 8 transistor array
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits
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M54585P/FP
500mA
M54585P
M54585FP
500mA)
common collector npn array
18P4G
20P2N-A
npn 8 transistor array
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IMX17
Abstract: DUAL TRANSISTOR
Text: UNISONIC TECHNOLOGIES CO., LTD IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES * *Two MMBT2222A chips in an SMT package. * Transistor elements are independent, eliminating interference. * High collector current. IC=500mA. * Mounting cost an area can be cut in half.
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IMX17
MMBT2222A
500mA.
OT-26
IMX17L-AG6
IMX17G-AG6-R
QW-R215-001
QW-R215-00
IMX17
DUAL TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA
-50mA)
2SB1132L-x-AB3-R
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
OT-89
O-252
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M63826GP
Abstract: gP DIODE m63826p M54526FP M54526P M63826FP M63826
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor
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M63826P/FP/GP
500mA
M63826P,
M63826FP
M63826GP
225mil
M63826P
M54526P
M54526FP.
gP DIODE
M54526FP
M63826
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M54523FP
Abstract: M63823GP M54523P M63823FP M63823P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63823P, M63823FP and M63823GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor
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M63823P/FP/GP
500mA
M63823P,
M63823FP
M63823GP
225mil
M63823P
M54523P
M54523FP.
M54523FP
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M54526P
Abstract: M54526FP
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits
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M54526P/FP
500mA
M54526P
M54526FP
500mA)
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER
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2SD1664
2SD1664
500mA/50mA)
2SB1132.
OT-89
QW-R208-025
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UN1596 Preliminary NPN SILICON TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR DESCRIPTION The UTC UN1596 are series of NPN silicon planar transistor, which has gain of 500 at IC=100mA.It can be used in such
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UN1596
UN1596
100mA
100mA
UN1596L-AA3-R
UN1596G-AA3-R
OT-223
QW-R207-021
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2SD1664L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION 1 The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES SOT-89 *Low VCE SAT : VCE (SAT)= 0.15V(Typ) (IC/IB= 500mA/50mA) *Complement the 2SB1132.
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2SD1664
2SD1664
OT-89
500mA/50mA)
2SB1132.
2SD1664L
2SD1664-x-AB3-R
2SD1664L-x-AB3-R
2SD1664L
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M54585KP
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54585KP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
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M54585KP
500mA
M54585KP
500mA)
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M54525AGP
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
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M54525AGP
500mA
M54525AGP
500mA
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BLF888
Abstract: No abstract text available
Text: BLF888 UHF power LDMOS transistor Rev. 01 — 16 December 2008 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
BLF888
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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LDTA124EET1
SC-89
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Seven Transistor Array PNP
Abstract: pnp DARLINGTON TRANSISTOR ARRAY pnp 8 transistor array pnp darlington array M63800FP pnp 8 transistor array ttl
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63800FP 7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63800FP is a seven-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.
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M63800FP
500mA
M63800FP
500mA)
Seven Transistor Array PNP
pnp DARLINGTON TRANSISTOR ARRAY
pnp 8 transistor array
pnp darlington array
pnp 8 transistor array ttl
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M54564
Abstract: M54564P circuit fluorescent tube 24v 18P4G 20P2N-A M54564FP TIME BASE GENERATOR 10HZ PNP DARLINGTON ARRAYS pnp 8 transistor array npn 8 transistor array
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M54564P/FP
500mA
M54564P
M54564FP
500mA)
M54564
circuit fluorescent tube 24v
18P4G
20P2N-A
TIME BASE GENERATOR 10HZ
PNP DARLINGTON ARRAYS
pnp 8 transistor array
npn 8 transistor array
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EE-125
Abstract: photo transistor high current photo transistor KDT5001A PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor"
Text: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor
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KDT5001A
KDT5001A
EE-125
photo transistor high current
photo transistor
PHOTO TRANSISTOR current to voltage
photo-transistor
PK640
"photo transistor"
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES *Low VCE sat . VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) 1 TO-252 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
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2SB1132
2SB1132
-500mA/-50mA)
O-252
100ms
QW-R209-012
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mcl610
Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR
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MCT210
MCT26
MCT66
MCL600
MCL610
MCT81
MCA81
MCL611
Transistor Data chart
mcl600
mcs6200
transistor 6 B
transistor c 2500
MCT4R
MCL601
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transistor TE 901 equivalent
Abstract: transistor TE 901 IGT6D11 IGT6E11
Text: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT6D11
6D11-
transistor TE 901 equivalent
transistor TE 901
IGT6E11
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K105 transistor
Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT4D11
K105 transistor
transistor k105
IGT4E11
IGT-4E11
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