c 1685 transistor
Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
Text: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors
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PH1617-60
PH1617-60
1615MHz
1685MHz
c 1685 transistor
1685 transistor
transistor c 1685
1615mhz
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5.1 amplifier circuits diagram
Abstract: digital 5.1 amplifier diagram schematic 5.1 amplifier circuit diagram 5.1 amplifier schematic
Text: Preliminary Product Description Sirenza Microdevices’ SPA-5016 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
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SPA-5016
EDS-102306
SPA-5016"
5.1 amplifier circuits diagram
digital 5.1 amplifier diagram schematic
5.1 amplifier circuit diagram
5.1 amplifier schematic
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2SC3356 Application Note
Abstract: 2SC3356 Inductive Load Driver Buzzers F10G 2SC3356-L 4S212
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage
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2SC3356
2SC3356
2SC3356L
2SC3356G
2SC3356-x-AE3-R
2SC3356L-x-AE3-R
2SC3356G-x-AE3-R
OT-23
2SC3356L-x-AE3-R
QW-R206-024
2SC3356 Application Note
Inductive Load Driver
Buzzers
F10G
2SC3356-L
4S212
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications e.g.
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2SC3356
2SC3356
2SC3356L-x-AE3-R
OT-23
QW-R206-024
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UTC LCD Driver
Abstract: 2sc3356
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications e.g.
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2SC3356
2SC3356
2SC3356L-x-AE3-R
OT-23
QW-R206-024
UTC LCD Driver
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSA537 TO-39 Metal Can Package MEDIUM SPEED SWITCHING AND LINEAR AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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CSA537
C-120
CSA537
Rev160302D
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSA537 TO-39 Metal Can Package MEDIUM SPEED SWITCHING AND LINEAR AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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CSA537
C-120
CSA537
Rev160302D
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Untitled
Abstract: No abstract text available
Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER
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2SC3356
OT-23
QW-R206-024
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage
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2SC3356
2SC3356
2SC3356L
2SC3356G
2SC3356-x-AE3-R
2SC3356L-x-AE3-R
2SC3356G-x-AE3-R
OT-23
2SC3356L-x-AE3-R
QW-R206-024
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2SC3356
Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER
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2SC3356
OT-23
QW-R206-024
2SC3356
marking r25 sot23
r25 marking
NPN R25
2SC3356 R25 sot-23
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2SC3356
Abstract: 2SC3356 Application Note Inductive Load Driver UTC LCD Driver
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications e.g.
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2SC3356
2SC3356
2SC3356-x-AE3-R
2SC3356L-x-AE3-R
2SC3356G-x-AE3-R
OT-23
QW-R206-024
2SC3356 Application Note
Inductive Load Driver
UTC LCD Driver
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSA537 TO-39 Metal Can Package MEDIUM SPEED SWITCHING AND LINEAR AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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QSC/L-000019
CSA537
C-120
CSA537
Rev160302D
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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2sc3356
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SC3356 NPN SILICON TRANSISTOR H I GH FREQU EN CY LOW N OI SE AM PLI FI ER ̈ DESCRI PT I ON The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications e.g.
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2SC3356
2SC3356
2SC3356L-x-AE3-R
OT-23
QW-R206-024
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t 3866 power transistor
Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -
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2N3553
O-117
O-128
O-131
O-129
20PEP
t 3866 power transistor
transistor 571
transistor 3866 s
transistor d 5702 e d 5703
t 3866 transistor
transistor 2N 5688
2N3553
transistor t 3866
3866 transistor
2n RF transistor
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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2N5707
Abstract: TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041
Text: 2N5707 SILICON NPN VH F POWER TRANSISTOR Emitter Isolated from Case Intermodulation Distortion Better Than 30 dB at 25 W P.E.P. Emitter Resistor Stabilised for Class AB S.S.B. Applications mechanical specification TO -128 absolute maximum ratings Tease = 25 °C
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2N5707
O-128
O-117
O-131
O-129
2N5707
TO128 PACKAGE
2n RF transistor
2N4127
transistor d 5702
Heat Sink to-39
2n4440
2N5687
TO-128
2n4041
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Gordos SSR
Abstract: gordos relays
Text: GORDOS SOLID STATE RELAYS DC OUTPUT SOLID STATE RELAYS GF SERIES FET OUTPUT GT SERIES TRANSISTOR OUTPUT • Long Life Switching of DC Loads to 30 A ■ 10 xA Leakage Current Permits Reliable Switching of Sensitive Devices ■ Milliohm On-Resistance Minimizes
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GF100D15
GF50D30
GF200D1C
GT60D10
Gordos SSR
gordos relays
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GF200D10
Abstract: No abstract text available
Text: GORDOS SOLID STATE RELAYS DC OUTPUT SOLID STATE RELAYS GF SERIES FET OUTPUT GT SERIES TRANSISTOR OUTPUT • Long Life Switching of DC Loads to 30 A ■ 10 |xA Leakage Current Permits Reliable Switching of Sensitive Devices ■ Milliohm On-Resistance Minimizes
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GF100D15
GF50D30
GF200D10
GT60D10
GF200D10
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2N3375
Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690
Text: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted
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2N3375
10/32-NF-2A-Thread
O-117
O-128
O-131
O-129
2N3375
Transistor 2n3375
2n5708
transistor 3866 s
2N3927
2n4440
texas rf power transistor
2n RF transistor
TO128 PACKAGE
2N5690
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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transistor C 2240 BL
Abstract: KTC2668 ktc732tm KTC2670 4L1A KTA970 KTC941TM KTC1923 732TM/KTN
Text: [E SMALL SIGNAL TRANSISTOR v CEO USE ic Pc hFE TYPE PU RPO SE K T A 1048 V (m A ) (V ) (m A ) (m W ) 50 150 400 70-700 6 2 -6 -2 -5 0 -150 400 70—400 50 150 200 70-700 6 2 70-400 -6 ~2 -5 0 -150 200 Ib *C (V ) 0.25 -0.3 0.25 -0.3 (m A ) Typ (M IN ) (m A)
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1923/KTN
45MHz
88A/KTN
f-45M
732TM/KTN
2240/KTN
970/KTP
transistor C 2240 BL
KTC2668
ktc732tm
KTC2670
4L1A
KTA970
KTC941TM
KTC1923
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