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    TRANSISTOR 50A Search Results

    TRANSISTOR 50A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP1CS04DWT-00#X0 Renesas Electronics Corporation IGBT 1250V 50A Chip Visit Renesas Electronics Corporation
    RJP1CS04DWA-00#W0 Renesas Electronics Corporation IGBT 1250V 50A Wafer Visit Renesas Electronics Corporation
    RJP65S04DWT-80#YB1 Renesas Electronics Corporation IGBT 650V 50A Chip Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 50A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    QCA50A

    Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
    Text: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V


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    QCA50B/QCB50A40/60 E76102 QCA50B QCB50A 400/600V QCA50B40 QCA50B60 QCA50A40 QCA50A60 QCA50B40 QCA50A QCA50A60 QCA50B60 PDF

    tyco igbt

    Abstract: function of igbt nf016 V23990-P430-F-01-14 V23990-P430-F-PM D8552 tyco igbt 1200V flowPACK V23990-P430-F
    Text: V23990-P430-F-PM final datasheet V23990-P430-F-01-14 flowPACK 1, 1200V 50A Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current


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    V23990-P430-F-PM V23990-P430-F-01-14 Tj125 D-85521 tyco igbt function of igbt nf016 V23990-P430-F-01-14 V23990-P430-F-PM D8552 tyco igbt 1200V flowPACK V23990-P430-F PDF

    Untitled

    Abstract: No abstract text available
    Text: V23990-P705-F-PM final data sheet flow 90PACK 1 600V/ 50A V23990-P705-F-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage


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    V23990-P705-F-PM 90PACK V23990-P705-F-01-14 PDF

    E2 diode

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1


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    QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x PDF

    K1 transistor

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.


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    FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG25N45 Preliminary NPN SILICON TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR „ DESCRIPTION UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications „ FEATURES * Very high input impedance


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    UG25N45 UG25N45 UG25N45L UG25N45G UG25N45-TA3-T UG25N45L-TA3-T UG25N45G-TA3-T O-220 QW-R203-037 PDF

    QCA50AA120

    Abstract: TERMINAL M5 QCA50AA100 diode 1000v 50a vvvf motor E76102
    Text: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


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    QCA50AA100 E76102 QCA50AA100 QCA50AA120 QCA50AA120 TERMINAL M5 diode 1000v 50a vvvf motor PDF

    QF50AA60

    Abstract: QF50AA40 50a 600v power darlington transistor
    Text: TRANSISTOR MODULE THREE PHASES BRIDGE TYPE QF50AA40/60 QF50AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


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    QF50AA40/60 QF50AA 400/600V QF50AA40 QF50AA60 QF50AA40 QF50AA60 50a 600v power darlington transistor PDF

    QCA50AA100

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA50AA100 UL;E76102 (M) QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


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    QCA50AA100 E76102 QCA50AA100 VCEX1000V IC50A, 30max. AMP110TAB IB11A VCC600V PDF

    darlington power transistor

    Abstract: QCA50AA120 PT 1200
    Text: TRANSISTOR MODULE QCA50AA120 UL;E76102 (M) QCA50AA120 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


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    QCA50AA120 E76102 QCA50AA120 VCEX1200V IC50A, 30max. AMP110TAB 1sec10sec IB11A VCC600V darlington power transistor PT 1200 PDF

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR M O D U L E three phases bridge type QF50AA40/60 Q F 50A A is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The


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    QF50AA40/60 400/600V QF50AA PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    BUK455-50A

    Abstract: BUK455-50B buk455 15 1E41 DPP100-24 T0220AB
    Text: Philips Components BUK455-50A BUK455-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is Intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK455-50A BUK455-50B BUK455 M89-1155/RC BUK455-50A BUK455-50B 15 1E41 DPP100-24 T0220AB PDF

    BUK453-50B

    Abstract: BUK453-50A R2d DIODE BUK453 T0220AB buk453 50B
    Text: BUK453-50A BUK453-50B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK453-50A BUK453-50B BUK453 T0220AB; M89-1138/RST BUK453-50B BUK453-50A R2d DIODE T0220AB buk453 50B PDF

    BUK553-50B

    Abstract: BUK553-50A buk553 T0220 PACKAGE buk553 T0220AB 50A POWER TRANSISTOR FOR SMPS
    Text: Philips Components BUK553-50A BUK553-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK553-50A BUK553-50B BUK553 M89-1153/RC BUK553-50B BUK553-50A T0220 PACKAGE buk553 T0220AB 50A POWER TRANSISTOR FOR SMPS PDF

    BUK555

    Abstract: BUK555-50A BUK555-50B BUK55S-50A T0220AB 600 V logic level fet 100-PJ
    Text: Philips Components BUK555-50A BUK555-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK555-50A BUK555-50B BUK555 M89-1163/RC BUK555-50A BUK555-50B BUK55S-50A T0220AB 600 V logic level fet 100-PJ PDF

    Untitled

    Abstract: No abstract text available
    Text: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    bb53131 0D50445 BUK453-50A BUK453-50B BUK453 inK453-50A T-39-n PDF

    Untitled

    Abstract: No abstract text available
    Text: 7qqigii3 0005171 qpq TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


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    QCA50B/QCB50A40/60 E76102 QCA50B QCB50A 400/600V QCA50B/QCB50A PDF

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


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    QCA50AA100 E76102 QCA50AA10 I20i------------ PDF

    BUK436-50B

    Abstract: BUK436-50A 7725A
    Text: Philips Components BUK436-50A BUK436-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect power transistor in a lastic envelope. he device is intended for use in Switched M ode Pow er Supplies S M P S , motor control, welding,


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    BUK436-50A BUK436-50B BUK436 M89-1146/RST BUK436-50B BUK436-50A 7725A PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    QCA50AA100

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA50AA100 U L ;E 76102 M is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. T he mounting base of the module is electrically isolated


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    QCA50AA100 QCA50AA100 E76102 15Crt PDF

    BUK542

    Abstract: BUK542-50A BUK542-50B 1-B-03
    Text: N AMER PHILIPS/DISCRETE: 5SE D • bbB3T31 0G2G5fe.5 S ■ PowerMOS transistor Logic Level FET BUK542-50A BUK542-50B T~ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    bbS3T31 002Q5t BUK542-50A BUK542-50B BUK542 1-B-03 PDF

    DD 127 D TRANSISTOR

    Abstract: BUK443-50B BUK443 BUK443-50A TRANSISTOR K 135 J 50
    Text: N AMER PHIL IP S/D ISCRETE 2SE D ^53^31 G0E0345 2 PowerMOS transistor BUK443-50A BUK443-50B T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    G0E0345 BUK443-50A BUK443-50B BUK443 ID/100 DD 127 D TRANSISTOR BUK443-50B TRANSISTOR K 135 J 50 PDF