QCA50A
Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
Text: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V
|
Original
|
QCA50B/QCB50A40/60
E76102
QCA50B
QCB50A
400/600V
QCA50B40
QCA50B60
QCA50A40
QCA50A60
QCA50B40
QCA50A
QCA50A60
QCA50B60
|
PDF
|
tyco igbt
Abstract: function of igbt nf016 V23990-P430-F-01-14 V23990-P430-F-PM D8552 tyco igbt 1200V flowPACK V23990-P430-F
Text: V23990-P430-F-PM final datasheet V23990-P430-F-01-14 flowPACK 1, 1200V 50A Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current
|
Original
|
V23990-P430-F-PM
V23990-P430-F-01-14
Tj125
D-85521
tyco igbt
function of igbt
nf016
V23990-P430-F-01-14
V23990-P430-F-PM
D8552
tyco igbt 1200V
flowPACK
V23990-P430-F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: V23990-P705-F-PM final data sheet flow 90PACK 1 600V/ 50A V23990-P705-F-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage
|
Original
|
V23990-P705-F-PM
90PACK
V23990-P705-F-01-14
|
PDF
|
E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
|
Original
|
QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
|
PDF
|
K1 transistor
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.
|
Original
|
FMMT413
J-STD-020
MILSTD-202,
DS33083
K1 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UG25N45 Preliminary NPN SILICON TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications FEATURES * Very high input impedance
|
Original
|
UG25N45
UG25N45
UG25N45L
UG25N45G
UG25N45-TA3-T
UG25N45L-TA3-T
UG25N45G-TA3-T
O-220
QW-R203-037
|
PDF
|
QCA50AA120
Abstract: TERMINAL M5 QCA50AA100 diode 1000v 50a vvvf motor E76102
Text: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
|
Original
|
QCA50AA100
E76102
QCA50AA100
QCA50AA120
QCA50AA120
TERMINAL M5
diode 1000v 50a
vvvf motor
|
PDF
|
QF50AA60
Abstract: QF50AA40 50a 600v power darlington transistor
Text: TRANSISTOR MODULE THREE PHASES BRIDGE TYPE QF50AA40/60 QF50AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
|
Original
|
QF50AA40/60
QF50AA
400/600V
QF50AA40
QF50AA60
QF50AA40
QF50AA60
50a 600v power darlington transistor
|
PDF
|
QCA50AA100
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA50AA100 UL;E76102 (M) QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
|
Original
|
QCA50AA100
E76102
QCA50AA100
VCEX1000V
IC50A,
30max.
AMP110TAB
IB11A
VCC600V
|
PDF
|
darlington power transistor
Abstract: QCA50AA120 PT 1200
Text: TRANSISTOR MODULE QCA50AA120 UL;E76102 (M) QCA50AA120 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
|
Original
|
QCA50AA120
E76102
QCA50AA120
VCEX1200V
IC50A,
30max.
AMP110TAB
1sec10sec
IB11A
VCC600V
darlington power transistor
PT 1200
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR M O D U L E three phases bridge type QF50AA40/60 Q F 50A A is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The
|
OCR Scan
|
QF50AA40/60
400/600V
QF50AA
|
PDF
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
BUK455-50A
Abstract: BUK455-50B buk455 15 1E41 DPP100-24 T0220AB
Text: Philips Components BUK455-50A BUK455-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is Intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
BUK455-50A
BUK455-50B
BUK455
M89-1155/RC
BUK455-50A
BUK455-50B
15 1E41
DPP100-24
T0220AB
|
PDF
|
BUK453-50B
Abstract: BUK453-50A R2d DIODE BUK453 T0220AB buk453 50B
Text: BUK453-50A BUK453-50B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
BUK453-50A
BUK453-50B
BUK453
T0220AB;
M89-1138/RST
BUK453-50B
BUK453-50A
R2d DIODE
T0220AB
buk453 50B
|
PDF
|
|
BUK553-50B
Abstract: BUK553-50A buk553 T0220 PACKAGE buk553 T0220AB 50A POWER TRANSISTOR FOR SMPS
Text: Philips Components BUK553-50A BUK553-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
BUK553-50A
BUK553-50B
BUK553
M89-1153/RC
BUK553-50B
BUK553-50A
T0220 PACKAGE buk553
T0220AB
50A POWER TRANSISTOR FOR SMPS
|
PDF
|
BUK555
Abstract: BUK555-50A BUK555-50B BUK55S-50A T0220AB 600 V logic level fet 100-PJ
Text: Philips Components BUK555-50A BUK555-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
BUK555-50A
BUK555-50B
BUK555
M89-1163/RC
BUK555-50A
BUK555-50B
BUK55S-50A
T0220AB
600 V logic level fet
100-PJ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
|
OCR Scan
|
bb53131
0D50445
BUK453-50A
BUK453-50B
BUK453
inK453-50A
T-39-n
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7qqigii3 0005171 qpq TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlin gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.
|
OCR Scan
|
QCA50B/QCB50A40/60
E76102
QCA50B
QCB50A
400/600V
QCA50B/QCB50A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
|
OCR Scan
|
QCA50AA100
E76102
QCA50AA10
I20i------------
|
PDF
|
BUK436-50B
Abstract: BUK436-50A 7725A
Text: Philips Components BUK436-50A BUK436-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect power transistor in a lastic envelope. he device is intended for use in Switched M ode Pow er Supplies S M P S , motor control, welding,
|
OCR Scan
|
BUK436-50A
BUK436-50B
BUK436
M89-1146/RST
BUK436-50B
BUK436-50A
7725A
|
PDF
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
|
PDF
|
QCA50AA100
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA50AA100 U L ;E 76102 M is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. T he mounting base of the module is electrically isolated
|
OCR Scan
|
QCA50AA100
QCA50AA100
E76102
15Crt
|
PDF
|
BUK542
Abstract: BUK542-50A BUK542-50B 1-B-03
Text: N AMER PHILIPS/DISCRETE: 5SE D • bbB3T31 0G2G5fe.5 S ■ PowerMOS transistor Logic Level FET BUK542-50A BUK542-50B T~ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
|
OCR Scan
|
bbS3T31
002Q5t
BUK542-50A
BUK542-50B
BUK542
1-B-03
|
PDF
|
DD 127 D TRANSISTOR
Abstract: BUK443-50B BUK443 BUK443-50A TRANSISTOR K 135 J 50
Text: N AMER PHIL IP S/D ISCRETE 2SE D ^53^31 G0E0345 2 PowerMOS transistor BUK443-50A BUK443-50B T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
|
OCR Scan
|
G0E0345
BUK443-50A
BUK443-50B
BUK443
ID/100
DD 127 D TRANSISTOR
BUK443-50B
TRANSISTOR K 135 J 50
|
PDF
|