BR 5551
Abstract: 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP
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WBFBP-06C
FMMDT5451
WBFBP-06C
5551-Type
5401-Type
-10mA
100MHz
BR 5551
5551 datasheet
transistor 5401
ic for cd rom
FMMDT5451
5551
application for 5401 TRANSISTOR
5551 transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP
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WBFBP-06C
FMMDT5451
WBFBP-06C
5551-Type
5401-Type
-10mA
100MHz
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NCC 5551
Abstract: CC5551 NCC5551 transistor 9AW marking 9AW 5551 transistor equivalent transistor bce 50 53 transistor marking wt
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5551 9AW TO-92 BCE MARKING : NCC 5551 High Voltage NPN Transistor for General Purpose and Telephony Applications
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CC5551
C-120
CC5551AI230801
NCC 5551
CC5551
NCC5551
transistor 9AW
marking 9AW
5551 transistor
equivalent transistor bce 50 53
transistor marking wt
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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CC5551
Abstract: transistor cc 5551
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5551 9AW TO-92 BCE MARKING : CC 5551 High Voltage NPN Transistor For General Purpose And Telephony Applications.
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CC5551
C-120
CC5551
transistor cc 5551
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cd5551
Abstract: CD 5551 5551 2N5551
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR 2N5551 9AW TO-92 CBE MARKING : CD 5551 High Voltage NPN Transistor For General Purpose And Telephony Applications.
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2N5551
C-120
cd5551
CD 5551
5551
2N5551
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str g 5551
Abstract: str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor 2N5401
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2N5401
2N5401
115002/00/03/pp8
str g 5551
str G 5551 47
transistor cc 5551
transistor 2n5401
2n5401 philips
a/STR/LH/8/str g 5551
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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ZXTN
Abstract: TS16949 ZXTN5551G ZXTP5401G 5551 transistor
Text: ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 2W Complementary part number ZXTP5401G Description C A high voltage NPN transistor in a high power dissipation surface mount package B Features • 160V rating
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ZXTN5551G
OT223,
600mA
ZXTP5401G
OT223
ZXTN5551GTA
ZXTN5551GTC
D-81541
ZXTN
TS16949
ZXTN5551G
ZXTP5401G
5551 transistor
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4491E
Abstract: 2N2222ACSM "npn switching transistor" 2N2222ACSM-RH TST001 SIGMA as 103 63E-10
Text: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)
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2N2222ACSM-RH
0E-10
0E-08
0E-09
4491E
2N2222ACSM
"npn switching transistor"
2N2222ACSM-RH
TST001
SIGMA as 103
63E-10
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2N2222A LCC1
Abstract: 2n2222a SOT23 2N2222ACSM-RH SOT23 transistor 2N2222A 2N2222ACSM 2n2222a surface tr 5551 Transistor 2N2222A 2N2222A TST001
Text: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)
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2N2222ACSM-RH
TST001
TST002
2N2222A LCC1
2n2222a SOT23
2N2222ACSM-RH
SOT23 transistor 2N2222A
2N2222ACSM
2n2222a surface
tr 5551
Transistor 2N2222A
2N2222A
TST001
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Untitled
Abstract: No abstract text available
Text: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A
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-100mA
-10mA
Mar-97
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MMDT5451
Abstract: equivalent of 5401 transistor transistor 5551 PNP5401 5401 transistor npn-pnp dual BR 5551
Text: MMDT5451 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor Dual Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES DUAL TRANSISTOR (NPN+PNP) Epitaxial Planar Die Construction Ideal for low Power Amplification and Switching
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MMDT5451
OT-363
SY-50mA,
-10mA,
100MHz
28-Oct-2009
MMDT5451
equivalent of 5401 transistor
transistor 5551
PNP5401
5401 transistor
npn-pnp dual
BR 5551
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5551
Abstract: 5551 transistor 5551 datasheet 5401 555-1
Text: 5551 5551 Silicon NPN Epitaxial Transistor Description: The 5551 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥160V@IC=1mA ●Complementary to 5401 Chip Appearance
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VCEO160V
440um
440um
110um
110um
5551
5551 transistor
5551 datasheet
5401
555-1
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PNP5401
Abstract: J-STD-020A MMDT5451 code marking KNM BR 5551
Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package
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MMDT5451
5551-Type
5401-Type
OT-363,
J-STD-020A
MIL-STD-202,
NPN5551)
PNP5401)
PNP5401
J-STD-020A
MMDT5451
code marking KNM
BR 5551
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Untitled
Abstract: No abstract text available
Text: MMDT5401 Dual Transistor NPN/PNP SOT-363 Features Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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MMDT5401
OT-363
-100A
-10mA
-50mA
100MHz
-200A,
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5551
Abstract: MMDT5401
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching
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OT-363
MMDT5401
OT-363
-10mA
-50mA
-10mA
100MHz
-200A,
5551
MMDT5401
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching
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OT-363
MMDT5401
OT-363
-10mA
-50mA
-10mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching
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OT-363
MMDT5401
OT-363
-10mA
-50mA
-10mA
100MHz
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BR 5551
Abstract: code marking KNM BR N 5551
Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package
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MMDT5451
5551-Type
5401-Type
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
MMMDT5451
MMDT5451-7
BR 5551
code marking KNM
BR N 5551
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MMDT5401
Abstract: K4m TRANSISTOR J-STD-020A MMDT5401-7 MMDT5401-7-F
Text: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT5401 Features • · · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package
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MMDT5401
OT-363,
J-STD-020A
MIL-STD-202,
DS30169
MMDT5401
K4m TRANSISTOR
J-STD-020A
MMDT5401-7
MMDT5401-7-F
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K4m transistor
Abstract: No abstract text available
Text: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package C2 Case: SOT-363, Molded Plastic
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MMDT5401
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
MMDT5401-7
3000/Tape
com/datasheets/ap02007
DS30169
K4m transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 SOT-363 DUAL TRANSISTOR NPN+PNP FEATURES C1 B2 z Epitaxial Planar Die Construction z Ideal for low Power Amplification and Switching z One 5551(NPN), one 5401(PNP)
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OT-363
MMDT5451
OT-363
-120V
-10mA
-50mA
-10mA,
-50mA,
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PDF
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5551 transistor
Abstract: No abstract text available
Text: MMDT5401 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMDT 5551 MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃
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MMDT5401
OT-363
2002/95/EC
Collector-baseFE43
Jun-2009,
KSTR08
MMDT5401
5551 transistor
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